Polar2
TM
HiperFET
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFH52N50P2
IXFT52N50P2
V
DSS
I
D25
R
DS(on)
= 500V
= 52A
≤
120mΩ
Ω
TO-247 (IXFH)
G
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
sold
M
d
Weight
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247)
TO-247
TO-268
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, Pulse Width Limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, V
DD
≤
V
DSS
, T
J
≤
150°C
T
C
= 25°C
Maximum Ratings
500
500
±
30
±
40
52
150
52
1.5
15
960
-55 ... +150
150
-55 ... +150
300
260
1.13 / 10
6
4
V
V
V
V
A
A
A
J
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
Features
D
S
D
(Tab)
TO-268 (IXFT)
G
S
D
(Tab)
G = Gate
S = Source
D
= Drain
Tab = Drain
International Standard Packages
Fast Intrinsic Diode
Avalanche Rated
Low R
DS(ON)
and Q
G
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
Symbol
Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 1mA
V
DS
= V
GS
, I
D
= 4mA
V
GS
=
±30V,
V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 125°C
Characteristic Values
Min.
Typ.
Max.
500
2.5
4.5
±100
V
V
nA
15
μA
1.5 mA
120 mΩ
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1
© 2011 IXYS CORPORATION, All Rights Reserved
DS100256A(9/11)
IXFH52N50P2
IXFT52N50P2
Symbol
Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
0.21
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 1Ω (External)
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 20V, I
D
= 0.5 • I
D25
, Note 1
Characteristic Values
Min.
Typ.
Max.
30
48
6800
695
76
22
10
46
8
113
30
43
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.13
°C/W
°C/W
e
1
2
3
TO-247 Outline
∅
P
Terminals: 1 - Gate
3 - Source
2 - Drain
Dim.
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
I
RM
Q
RM
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= I
S
, V
GS
= 0V, Note 1
I
F
= 26A, -di/dt = 100A/μs
V
R
= 85V, V
GS
= 0V
14
1.27
Characteristic Values
Min.
Typ.
Max.
52
208
1.3
250
A
A
V
ns
A
μC
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A
1
A
2
2.2
2.6
b
1.0
1.4
b
1
1.65
2.13
b
2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P
3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
Terminals: 1 - Gate
3 - Source
2 - Drain
4 - Drain
Note
1. Pulse test, t
≤
300μs, duty cycle, d
≤
2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFH52N50P2
IXFT52N50P2
Fig. 1. Output Characteristics @ T
J
= 25ºC
55
50
45
40
V
GS
= 10V
7V
100
7V
120
V
GS
= 10V
8V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
I
D
- Amperes
30
25
20
15
10
5
0
0
1
2
3
4
6V
I
D
- Amperes
35
80
60
6V
40
20
5V
0
5
6
0
5
10
15
20
25
30
5V
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics @ T
J
= 125ºC
55
50
45
6V
V
GS
= 10V
7V
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
4V
0.2
0
2
4
6
8
10
12
14
16
-50
Fig. 4. R
DS(on)
Normalized to I
D
= 26A Value vs.
Junction Temperature
V
GS
= 10V
I
D
- Amperes
35
30
25
20
5V
15
10
5
0
R
DS(on)
- Normalized
40
I
D
= 52A
I
D
= 26A
-25
0
25
50
75
100
125
150
V
DS
- Volts
T
J
- Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= 26A Value vs.
Drain Current
3.4
V
GS
= 10V
3.0
T
J
= 125ºC
55
50
45
40
Fig. 6. Maximum Drain Current vs.
Case Temperature
R
DS(on)
- Normalized
2.6
2.2
I
D
- Amperes
T
J
= 25ºC
35
30
25
20
15
10
5
1.8
1.4
1.0
0
0
10
20
30
40
50
60
70
80
90
100
110
120
-50
-25
0
25
50
75
100
125
150
0.6
I
D
- Amperes
T
C
- Degrees Centigrade
© 2011 IXYS CORPORATION, All Rights Reserved
IXFH52N50P2
IXFT52N50P2
Fig. 7. Input Admittance
90
80
70
100
90
80
T
J
= 125ºC
25ºC
- 40ºC
70
T
J
= - 40ºC
Fig. 8. Transconductance
g
f s
- Siemens
60
I
D
- Amperes
25ºC
60
50
125ºC
40
30
20
10
0
50
40
30
20
10
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
0
10
20
30
40
50
60
70
80
90
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
120
10
9
100
8
7
V
DS
= 250V
I
D
= 26A
I
G
= 10mA
Fig. 10. Gate Charge
80
I
S
- Amperes
V
GS
- Volts
T
J
= 125ºC
T
J
= 25ºC
6
5
4
3
2
1
60
40
20
Fig. 13. Maximum Transient Thermal Impedance
0
10
20
30
40
50
60
70
80
90
100
110
120
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0
1.00
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
100,000
0.30
Fig. 12. Maximum Transient Thermal Impedance
f
= 1 MHz
Capacitance - PicoFarads
10,000
Ciss
0.10
1,000
Coss
100
Crss
10
0
5
10
15
20
25
30
35
40
Z
(th)JC
- ºC / W
0.01
0.0001
0.001
0.01
0.1
1
10
V
DS
- Volts
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_52N50P2(8J-N45)03-22-10
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
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