Polar
TM
HiPerFET
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFH120N20P
IXFK120N20P
R
DS(on)
≤
t
rr
≤
V
DSS
I
D25
=
=
200V
120A
22mΩ
Ω
200ns
TO-247 (IXFH)
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
LRMS
I
DM
I
A
E
AS
P
D
dV/dt
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque
TO-247
TO-264
Test Conditions
T
J
= 25°C to 175°C
T
J
= 25°C to 175°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C
Lead Current Limit, RMS
T
C
= 25°C, Pulse Width Limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, V
DD
≤
V
DSS
, T
J
≤
175°C
Maximum Ratings
200
200
±
20
±
30
120
75
300
60
2
714
10
-55 ... +175
175
-55 ... +175
300
260
1.13/10
6
10
V
V
V
V
A
A
A
A
J
W
V/ns
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
G
D
S
Tab
TO-264 (IXFK)
G
D
S
Tab
G = Gate
S = Source
D = Drain
Tab = Drain
Features
International Standard Packages
Avalanche Rated
Fast Intrinsic Diode
Low Q
G
Low R
DS(on)
Low Drain-to-Tab Capacitance
Low Package Inductance
Advantages
Symbol
Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 250μA
V
DS
= V
GS
, I
D
= 4mA
V
GS
=
±
20V, V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 150°C
Characteristic Values
Min.
Typ.
Max.
200
2.5
5.0
±
200
25
500
V
V
nA
μA
μA
Easy to Mount
Space Savings
Applications
DC-DC Coverters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC and DC Motor Drives
Uninterrupted Power Supplies
High Speed Power Switching
Applications
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1
22 mΩ
© 20109 IXYS CORPORATION, All Rights Reserved
DS99223F(02/10)
IXFH120N20P
IXFK120N20P
Symbol
Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
TO-247
TO-264
0.21
0.15
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 3.3Ω (External)
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 10V, I
D
= 0.5 • I
D25
, Note 1
Characteristic Values
Min.
Typ.
Max.
40
63
6000
1300
265
30
35
100
31
152
40
75
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.21
°C/W
°C/W
°C/W
e
1
2
3
TO-247 (IXFH) Outline
∅
P
Terminals: 1 - Gate
3 - Source
2 - Drain
Dim.
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= I
S
, V
GS
= 0V, Note 1
I
F
= 25A, -di/dt = 100A/μs
V
R
= 100V, V
GS
= 0V
100
0.4
6.0
Characteristic Values
Min.
Typ.
Max.
120
300
1.5
200
A
A
V
ns
μC
A
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A
1
A
2
2.2
2.6
b
1.0
1.4
b
1
1.65
2.13
b
2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P
3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-264 (IXFK) Outline
Note 1.
Pulse test, t
≤
300μs, duty cycle, d
≤
2%.
1 - Gate
2 - Drain
3 - Source
4 - Drain
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
6,404,065 B1
6,534,343
6,583,505
Millimeter
Min.
Max.
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32 20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
Inches
Min.
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
7,157,338B2
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
IXFH120N20P
IXFK120N20P
Fig. 1. Output Characteristics
@ 25
º
C
120
V
GS
= 10V
9V
8V
270
240
210
V
GS
= 10V
9V
Fig. 2. Extended Output Characteristics
@ 25
º
C
100
I
D
- Am
peres
I
D
- Am
peres
80
180
150
8V
120
90
60
30
6V
7V
60
7V
40
6V
5V
0
0
0.5
1
1.5
2
2.5
20
0
0
2
4
6
8
10
12
14
16
V
D S
- Volts
Fig. 3. Output Characteristics
@ 150
º
C
120
V
GS
= 10V
9V
8V
3
V
GS
= 10V
V
D S
- Volts
Fig. 4. R
DS(on
)
Norm alized to 0.5 I
D25
Value vs. Junction Tem perature
100
R
D S ( o n )
- Norm
alized
2.5
I
D
= 120A
2
I
D
= 60A
1.5
I
D
- Am
peres
80
7V
60
6V
40
20
1
5V
0.5
0
1
2
3
4
5
6
-50
-25
0
25
50
75
100
125
150
175
0
V
D S
- Volts
Fig. 5. R
DS(on)
Norm alized to 0.5 I
D25
Value vs. Drain Current
4
T
J
= 175
º
C
3.5
90
80
70
3
2.5
V
GS
= 10V
2
1.5
20
1
0.5
0
30
60
90
T
J
= 25
º
C
10
0
V
GS
= 15V
T
J
- Degrees Centigrade
Fig. 6. Drain Current vs. Case
Tem perature
External Lead Current Limit
R
D S ( o n )
- Norm
alized
I
D
- Am
peres
60
50
40
30
I
D
- Amperes
120 150 180 210 240 270 300
-50
-25
0
25
50
75
100
125
150
175
T
C
- Degrees Centigrade
© 20109 IXYS CORPORATION, All Rights Reserved
IXFH120N20P
IXFK120N20P
Fig. 7. Input Adm ittance
180
90
80
150
70
Fig. 8. Transconductance
g
f s
- Siemens
I
D
- Am
peres
120
60
50
40
30
20
10
0
T
J
= -40
º
C
25
º
C
150
º
C
90
60
T
J
= 150
º
C
25
º
C
-40
º
C
30
0
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
0
30
60
90
120
150
180
210
V
G S
- Volts
Fig. 9. Source Current vs .
Source-To-Drain Voltage
350
300
8
250
7
10
9
V
DS
= 100V
I
D
= 60A
I
G
= 10mA
I
D
- Amperes
Fig. 10. Gate Charge
I
S
- Am
peres
V
GS
- Volts
T
J
= 150
º
C
T
J
= 25
º
C
0.4
0.6
0.8
1
1.2
1.4
1.6
200
150
100
50
0
6
5
4
3
2
1
0
0
20
40
60
80
100
120
140
160
V
S D
- Volts
Q
G
- nanoCoulombs
Fig. 12. Forw ard-Bias
Safe Operating Are a
1000
T
J
= 175
º
C
R
DS(on)
Limit
T
C
= 25
º
C
Fig. 11. Capacitance
100,000
f = 1MHz
Capacitance - picoFarads
10,000
I
D
- Am
peres
C
iss
25µs
C
oss
1,000
100
100µs
1ms
C
rss
DC
100
0
5
10
15
20
25
30
35
40
10
10
100
1000
10ms
V
DS
- Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
V
D S
- Volts
IXFH120N20P
IXFK120N20P
Fig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l Re s is t a n c e
1.00
R
( t h ) J C
- ºC / W
0.10
0.01
1
10
100
1000
Pu ls e W id th - millis e c o n d s
© 20109 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_120N20P(8S)5-05-04
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