Advance Technical Information
HiperFET
TM
Power MOSFET
Q3-Class
N-Channel Enhancement Mode
Fast Intrinsic Rectifier
IXFN44N100Q3
V
DSS
I
D25
R
DS(on)
t
rr
=
=
≤
≤
1000V
38A
220mΩ
Ω
300ns
miniBLOC
E153432
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
V
ISOL
M
d
Weight
50/60 Hz, RMS, t = 1minute
I
ISOL
≤
1mA,
t = 1s
Mounting Torque for Base Plate
Terminal Connection Torque
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, Pulse Width Limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, V
DD
≤
V
DSS
, T
J
≤
150°C
T
C
= 25°C
Maximum Ratings
1000
1000
±30
±40
38
110
44
4
50
960
-55 ... +150
150
-55 ... +150
2500
3000
1.5/13
1.3/11.5
30
V
V
V
V
A
A
A
J
V/ns
W
°C
°C
°C
V~
V~
Nm/lb.in.
Nm/lb.in.
g
Features
International Standard Package
Low
Intrinsic Gate Resistance
miniBLOC with Aluminum Nitride
Isolation
Low Package Inductance
Fast Intrinsic Rectifier
Low R
DS(on)
and Q
G
Advantages
High Power Density
Easy to Mount
Space Savings
Symbol
Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 3mA
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
±30V,
V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
V
GS
= 10V, I
D
= 22A, Note 1
T
J
= 125°C
Characteristic Values
Min.
Typ.
Max.
1000
3.5
6.5
V
V
Applications
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
Temperature and Lighting Controls
G = Gate
S = Source
D
S
S
G
D = Drain
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
(Gate Return) Terminal.
±200
nA
50
μA
3 mA
220 mΩ
© 2011 IXYS CORPORATION, All Rights Reserved
DS100306(03/11)
IXFN44N100Q3
Symbol
Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
R
Gi
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
0.05
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 22A
Gate Input Resistance
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 22A
R
G
= 0.5Ω (External)
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 20V, I
D
= 22A, Note 1
Characteristic Values
Min.
Typ.
Max.
26
43
13.6
1046
86
0.12
48
30
66
28
264
76
110
S
nF
pF
pF
Ω
ns
ns
ns
ns
nC
nC
nC
0.13
°C/W
°C/W
(M4 screws (4x) supplied)
SOT-227B (IXFN) Outline
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= I
S
, V
GS
= 0V, Note 1
I
F
= 22A, -di/dt = 100A/μs
V
R
= 100V, V
GS
= 0V
2.1
16.2
Characteristic Values
Min.
Typ.
Max.
44
176
1.4
A
A
V
300 ns
μC
A
Note
1. Pulse test, t
≤
300μs, duty cycle, d
≤
2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFN44N100Q3
Fig. 1. Output Characteristics @ T
J
= 25ºC
45
40
35
30
8V
V
GS
= 10V
90
80
70
60
V
GS
= 10V
9V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
I
D
- Amperes
25
20
15
10
7V
5
0
0
1
2
3
4
5
6
7
8
6V
9
10
I
D
- Amperes
50
40
8V
30
20
10
0
0
5
10
15
20
25
30
7V
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics @ T
J
= 125ºC
45
40
35
V
GS
= 10V
8V
3.2
Fig. 4. R
DS(on)
Normalized to I
D
= 22A Value vs.
Junction Temperature
V
GS
= 10V
2.8
R
DS(on)
- Normalized
2.4
I
D
= 44A
2.0
I
D
= 22A
30
I
D
- Amperes
25
20
15
10
5
0
0
5
10
15
7V
1.6
1.2
6V
5V
20
25
0.8
0.4
-50
-25
0
25
50
75
100
125
150
V
DS
- Volts
T
J
- Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= 22A Value vs.
Drain Current
2.8
2.6
2.4
V
GS
= 10V
T
J
= 125ºC
45
40
35
30
Fig. 6. Maximum Drain Current vs.
Case Temperature
R
DS(on)
- Normalized
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
10
20
30
40
50
60
70
80
90
T
J
= 25ºC
I
D
- Amperes
25
20
15
10
5
0
-50
-25
0
25
50
75
100
125
150
I
D
- Amperes
T
C
- Degrees Centigrade
© 2011 IXYS CORPORATION, All Rights Reserved
IXFN44N100Q3
Fig. 7. Input Admittance
70
80
70
60
25ºC
T
J
= - 40ºC
Fig. 8. Transconductance
60
50
g
f s
- Siemens
I
D
- Amperes
50
40
30
20
10
0
40
T
J
= 125ºC
30
25ºC
- 40ºC
125ºC
20
10
0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
0
10
20
30
40
50
60
70
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
140
10
9
120
8
100
7
V
DS
= 500V
I
D
= 22A
I
G
= 10mA
Fig. 10. Gate Charge
I
S
- Amperes
V
GS
- Volts
T
J
= 125ºC
T
J
= 25ºC
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
80
6
5
4
3
2
1
60
40
20
0
0
0
40
80
120
160
200
240
280
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
100,000
1000
Fig. 12. Forward-Bias Safe Operating Area
f
= 1 MHz
Ciss
R
DS(on)
Limit
100
1ms
250µs
Capacitance - PicoFarads
10,000
Coss
1,000
I
D
- Amperes
10
100
Crss
1
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
10
0
5
10
15
20
25
30
35
40
0.1
10
100
1,000
V
DS
- Volts
V
DS
- Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFN44N100Q3
Fig. 13. Maximum Transient Thermal Impedance
1
0.1
Z
(th)JC
- ºC / W
0.01
0.001
0.0001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2011 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_44N100Q3(Q9)03-04-11
