PolarHV
TM
HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
IXFN 48N60P
V
DSS
= 600 V
I
D25
= 40 A
R
DS(on)
≤
140 mΩ
Ω
t
rr
≤
200 ns
Maximum Ratings
600
600
±30
±40
40
110
48
70
2.0
10
625
-55 ... +150
150
-55 ... +150
300
2500
3000
V
V
V
G
miniBLOC, SOT-227 B (IXFN)
E153432
S
V
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
V~
V~
Features
•
International standard package
•
Encapsulating epoxy meets
G = Gate
S = Source
D = Drain
D
S
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, di/dt
≤
100 A/μs, V
DD
≤
V
DSS
,
T
J
≤
150°C, R
G
= 2
Ω
T
C
= 25°C
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS
t = 1 min
I
ISOL
≤
1 mA
t=1s
Mounting torque
Terminal connection torque
1.5 / 13 Nm/lb.in.
1.5 / 13 Nm/lb.in.
30
g
UL 94 V-0, flammability classification
•
miniBLOC with Aluminium nitride
isolation
Fast recovery diode
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
μA
V
DS
= V
GS
, I
D
= 8 mA
V
GS
=
±30
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 125°C
Characteristic Values
Min. Typ.
Max.
600
3.0
5.5
±200
25
1000
140
V
V
nA
μA
μA
mΩ
Advantages
Easy to mount
Space savings
High power density
V
GS
= 10 V, I
D
= 4 A
Pulse test, t
≤
300
μs,
duty cycle d
≤
2 %
© 2006 IXYS All rights reserved
DS99337E(03/06)
IXFN 48N60P
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Min. Typ. Max.
35
53
8860
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
850
60
30
V
GS
= 10 V, V
DS
= 24 A
R
G
= 2
Ω
(External)
25
85
22
150
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 24 A
50
50
0.2
SOT-227B
0.05
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
°C/W
°C/W
SOT-227B (IXFN) Outline
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
V
DS
= 20 V; I
D
= 24 A, pulse test
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
Test Conditions
V
GS
= 0 V
Repetitive
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Min. Typ. Max.
48
110
1.5
200
0.8
6.0
A
A
V
ns
μC
A
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
≤
300
μs,
duty cycle d
≤
2 %
I
F
= 25A, -di/dt = 100 A/μs
V
R
= 100V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
IXFN 48N60P
Fig. 1. Output Characte r is tics
@ 25
º
C
50
45
40
35
V
GS
= 10V
8V
7V
120
100
V
GS
= 10V
8V
Fig. 2. Exte nde d Output Characte r is tics
@ 25
º
C
I
D
- Amperes
I
D
- Amperes
30
25
20
15
10
5
0
0
1
2
3
4
5
6
5V
6V
80
60
40
7V
6V
20
5V
0
0
4
8
1
2
1
6
20
24
V
D S
- V olts
Fig. 3. Output Characte r is tics
@ 125
º
C
50
45
40
35
V
GS
= 10V
7V
3.1
2.8
V
GS
= 10V
V
D S
- V olts
Fig. 4. R
DS(on
)
Norm alize d to I
D
= 24A
V alue vs . Junction Te m pe r atur e
R
D S ( o n )
- Normalized
2.5
2.2
1.9
1.6
1.3
1
0.7
0.4
I
D
= 48A
I
D
= 24A
I
D
- Amperes
30
25
20
15
10
5
0
0
2
4
6
8
6V
5V
10
12
14
-50
-25
0
25
50
75
100
125
150
V
D S
- V olts
Fig. 5. R
DS(on)
Nor m alize d to
I
D
= 24A V alue vs . Dr ain Cur re nt
3.4
3.1
V
GS
= 10V
T
J
= 125ºC
45
40
35
T
J
- Degrees Centigrade
Fig . 6. Dr ain C u r r e n t vs . C as e
T e m p e r atu r e
R
D S ( o n )
- Normalized
2.8
2.5
2.2
1.9
1.6
1.3
1
0.7
0
20
40
60
80
I
D
- Amperes
T
J
= 25ºC
30
25
20
15
10
5
0
100
120
140
-50
-25
0
25
50
75
100
125
150
I
D
- A mperes
T
C
- Degrees Centigrade
© 2006 IXYS All rights reserved
IXFN 48N60P
Fig. 7. Input Adm ittance
80
70
60
100
90
80
Fig. 8. Trans conductance
I
D
- Amperes
50
40
30
20
- Siemens
70
60
50
40
30
20
T
J
= -40ºC
25ºC
125ºC
T
J
= 125ºC
25ºC
-40ºC
10
0
4
4.5
5
5.5
6
6.5
7
g
fs
10
0
0
10
20
30
40
50
60
70
80
90
V
G S
- V olts
Fig. 9. Sour ce Cur re nt vs .
Source -To-Drain V oltage
160
140
120
7
10
9
8
V
DS
= 300V
I
D
= 24A
I
G
= 10m A
I
D
- A mperes
Fig. 10. Gate Char ge
I
S
- Amperes
V
G S
- Volts
T
J
= 125ºC
T
J
= 25ºC
100
80
60
40
20
0
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
6
5
4
3
2
1
0
0
20
40
60
80
100
120
140
160
V
S D
- V olts
Q
G
- nanoCoulombs
Fig . 13. M axim u m T r an s ie n t T h e r m al
Re s is tan ce
1. 00
Fig. 11. Capacitance
100000
f = 1MH z
Capacitance - picoFarads
C is s
10000
R
( t h ) J C
-
º
C / W
40
0. 10
1000
C os s
0. 01
100
C rs s
10
0
5
10
15
20
25
30
35
0. 00
0. 0001
0. 001
0. 01
0. 1
1
10
V
D S
- V olts
IXYS reserves the right to change limits, test conditions, and dimensions.
Puls e W idth - Sec onds
