HiPerFET
TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, Low Q
g
, Low Intrinsic R
G
High dV/dt, Low t
rr
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
V
ISOL
M
d
Weight
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, RMS
I
ISOL
≤
1mA
t = 1 minute
t = 1 second
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C
IXFN50N80Q2
V
DSS
I
D25
R
DS(on)
t
rr
=
=
≤
≤
800V
50A
160mΩ
Ω
300ns
miniBLOC, SOT-227
E153432
S
Maximum Ratings
800
800
±30
±40
50
200
50
5
20
1135
-55 ... +150
150
-55 ... +150
300
260
2500
3000
1.5/13
1.3/11.5
30
V
V
V
V
A
A
A
J
V/ns
W
°C
°C
°C
°C
°C
V~
V~
Nm/lb.in.
Nm/lb.in.
g
G
S
D
G = Gate
S = Source
D = Drain
T
C
= 25°C, Pulse Width Limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, V
DD
≤
V
DSS
, T
J
≤
150°C
T
C
= 25°C
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
( Gate Return ) Terminal.
Features
International Standard Package
miniBLOC, with Aluminium Nitride
Isolation
Isolation Voltage 2500
V~
High Current Handling Capability
Fast Intrinsic Rectifier
Avalanche Rated
Low R
DS(on)
Advantages
Easy to Mount
Space Savings
High Power Density
Mounting Torque
Terminal Connection Torque
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 1mA
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
±30V,
V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 125°C
Characteristic Values
Min.
Typ.
Max.
800
3.0
5.5
±200
V
V
nA
Applications
Switch-Mode and Resonant-Mode
Power Supplies >500kHz Switching
DC-DC Converters
DC Choppers
Pulse Generation
Laser Drivers
50
μA
3 mA
160 mΩ
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1
© 2010 IXYS CORPORATION, All Rights Reserved
DS99028C(01/10)
IXFN50N80Q2
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
0.05
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 1Ω (External)
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 10V, I
D
= 0.5 • I
D25
, Note 1
Characteristic Values
Min.
Typ.
Max.
32
48
13.5
1180
213
26
25
60
13
260
56
120
S
nF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.11
°C/W
°C/W
(M4 screws (4x) supplied)
SOT-227B (IXFN) Outline
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= 50A, V
GS
= 0V, Note 1
I
F
= 25A, V
GS
= 0V
-di/dt = 100A/μs
V
R
= 100V
1.1
8.0
Characteristic Values
Min. Typ.
Max.
50
200
1.5
A
A
V
300 ns
μC
A
Note 1. Pulse test, t
≤
300μs, duty cycle, d
≤
2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFN50N80Q2
Fig. 1. Output Characteristics @ T
J
= 25ºC
50
45
40
35
6V
30
25
20
15
10
5
0
0
1
2
3
4
5
6
7
8
5V
V
GS
= 10V
7V
100
90
80
70
V
GS
= 10V
7V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
I
D
- Amperes
I
D
- Amperes
60
50
40
30
20
10
0
0
3
6
9
6V
5V
12
15
18
21
24
27
30
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics @ T
J
= 125ºC
50
V
GS
= 10V
45
2.8
40
35
6V
3.2
Fig. 4. R
DS(on)
Normalized to I
D
= 25A Value vs.
Junction Temperature
V
GS
= 10V
R
DS(on)
- Normalized
2.4
I
D
- Amperes
I
D
= 50A
I
D
= 25A
30
25
20
15
10
5V
2.0
1.6
1.2
0.8
5
0
0
2
4
6
8
10
12
14
16
18
20
0.4
-50
-25
0
25
50
75
100
125
150
V
DS
- Volts
T
J
- Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= 25A Value vs.
Drain Current
2.8
2.6
2.4
V
GS
= 10V
T
J
= 125ºC
50
60
Fig. 6. Maximum Drain Current vs.
Case Temperature
R
DS(on)
- Normalized
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
10
20
30
40
50
60
70
80
90
100
110
T
J
= 25ºC
40
I
D
- Amperes
30
20
10
0
-50
-25
0
25
50
75
100
125
150
I
D
- Amperes
T
C
- Degrees Centigrade
© 2010 IXYS CORPORATION, All Rights Reserved
IXFN50N80Q2
Fig. 7. Input Admittance
100
90
80
100
90
80
T
J
= - 40ºC
Fig. 8. Transconductance
g
f s
- Siemens
70
70
25ºC
60
50
125ºC
40
30
20
10
0
I
D
- Amperes
60
50
40
30
20
10
0
2.5
3.0
3.5
4.0
4.5
T
J
= 125ºC
25ºC
- 40ºC
5.0
5.5
6.0
6.5
0
10
20
30
40
50
60
70
80
90
100
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
160
140
120
7
10
9
8
V
DS
= 400V
I
D
= 25A
I
G
= 10mA
Fig. 10. Gate Charge
I
S
- Amperes
V
GS
- Volts
T
J
= 125ºC
T
J
= 25ºC
100
80
60
40
20
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
6
5
4
3
2
1
0
0
Fig.
40
Maximum Transient Thermal Impedance
12.
80
120
160
200
240
Q
G
- NanoCoulombs
V
SD
- Volts
1.000
Fig. 11. Capacitance
100,000
Fig. 12. Maximum Transient Thermal Impedance
0.200
f
= 1 MHz
0.100
Capacitance - PicoFarads
Ciss
10,000
Coss
1,000
Z
(th)JC
- ºC / W
30
35
40
0.010
Crss
100
0
5
10
15
20
25
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
- Volts
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF:F_50N80Q2(95)1-18-10-C
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
www.littelfuse.com/disclaimer-electronics.
