Preliminary Technical Information
X3-Class HiPERFET
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXFA50N20X3
IXFP50N20X3
V
DSS
I
D25
R
DS(on)
= 200V
= 50A
30m
TO-263
(IXFA)
G
S
D (Tab)
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
F
C
M
d
Weight
Test Conditions
T
J
= 25C to 150C
T
J
= 25C to 150C, R
GS
= 1M
Continuous
Transient
T
C
= 25C
T
C
= 25C, Pulse Width Limited by T
JM
T
C
= 25C
T
C
= 25C
I
S
I
DM
, V
DD
V
DSS
, T
J
150°C
T
C
= 25C
Maximum Ratings
200
200
20
30
50
70
25
400
20
240
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
V/ns
W
C
C
C
°C
°C
N/lb
Nm/lb.in
g
g
TO-220
(IXFP)
G
D
S
D (Tab)
G = Gate
S = Source
D
= Drain
Tab = Drain
Features
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Force (TO-263)
Mounting Torque (TO-220)
TO-263
TO-220
300
260
International Standard Packages
Low R
DS(ON)
and Q
G
Avalanche Rated
Low Package Inductance
10..65 / 2.2..14.6
1.13 / 10
2.5
3.0
Advantages
High Power Density
Easy to Mount
Space Savings
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 1mA
V
DS
= V
GS
, I
D
= 1mA
V
GS
=
20V,
V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 125C
Characteristic Values
Min.
Typ.
Max.
200
2.5
4.5
V
V
Applications
100
nA
10
A
350
A
25
30 m
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
V
GS
= 10V, I
D
= 0.5
•
I
D25
, Note 1
© 2018 IXYS CORPORATION, All Rights Reserved
DS100877B(6/18)
IXFA50N20X3
IXFP50N20X3
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
g
fs
R
Gi
C
iss
C
oss
C
rss
Effective Output Capacitance
C
o(er)
C
o(tr)
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
TO-220
0.50
V
GS
= 10V, V
DS
= 0.5
•
V
DSS
, I
D
= 0.5
•
I
D25
Energy related
Time related
V
GS
= 0V
V
DS
= 0.8 • V
DSS
200
600
16
24
46
11
33
8
10
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.52
C/W
C/W
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 10V, I
D
= 0.5 • I
D25
, Note 1
Gate Input Resistance
Characteristic Values
Min.
Typ.
Max
25
42
1.9
2100
390
1.5
S
pF
pF
pF
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 10 (External)
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
V
GS
= 0V
Repetitive, pulse Width Limited by T
JM
I
F
= I
S
, V
GS
= 0V, Note 1
I
F
= 25A, -di/dt = 100A/μs
V
R
= 100V
70
220
6.2
Characteristic Values
Min.
Typ.
Max
50
200
1.4
A
A
V
ns
nC
A
Note 1. Pulse test, t
300s, duty cycle, d 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
7,005,734B2
6,759,692
7,063,975B2
6,771,478B2 7,071,537
7,157,338B2
IXFA50N20X3
IXFP50N20X3
Fig. 1. Output Characteristics @ T
J
= 25 C
50
V
GS
= 10V
8V
40
7V
100
7V
120
V
GS
= 10V
8V
o
Fig. 2. Extended Output Characteristics @ T
J
= 25 C
o
I
D
- Amperes
30
6V
I
D
- Amperes
80
60
6V
40
20
10
20
5V
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0
0
5
10
15
20
25
30
5V
V
DS
- Volts
o
V
DS
- Volts
Fig. 3. Output Characteristics @ T
J
= 125 C
50
V
GS
= 10V
8V
40
7V
3.4
3.0
2.6
Fig. 4. R
DS(on)
Normalized to I
D
= 25A Value vs.
Junction Temperature
V
GS
= 10V
R
DS(on)
- Normalized
6V
I
D
- Amperes
30
2.2
1.8
1.4
1.0
I
D
= 50A
20
5V
10
I
D
= 25A
0.6
4V
0
0
0.5
1
1.5
2
2.5
3
3.5
0.2
-50
-25
0
25
50
75
100
125
150
V
DS
- Volts
T
J
- Degrees Centigrade
4.5
4.0
3.5
Fig. 5. R
DS(on)
Normalized to I
D
= 25A Value vs.
Drain Current
V
GS
= 10V
1.3
1.2
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
BV
DSS
/ V
GS(th)
- Normalized
R
DS(on)
- Normalized
T
J
= 125 C
3.0
2.5
2.0
T
J
= 25 C
1.5
1.0
0.5
0
10
20
30
40
50
60
70
80
90
100
110
120
o
o
1.1
1.0
0.9
0.8
BV
DSS
V
GS(th)
0.7
0.6
-60
-40
-20
0
20
40
60
80
100
120
140
160
I
D
- Amperes
T
J
- Degrees Centigrade
© 2018 IXYS CORPORATION, All Rights Reserved
IXFA50N20X3
IXFP50N20X3
Fig. 7. Maximum Drain Current vs. Case Temperature
80
50
70
60
V
DS
= 10V
Fig. 8. Input Admittance
40
I
D
- Amperes
30
I
D
- Amperes
50
40
30
20
T
J
= 125 C
25 C
- 40 C
10
o
o
o
20
10
0
-50
-25
0
25
50
75
100
125
150
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
T
C
- Degrees Centigrade
V
GS
- Volts
Fig. 9. Transconductance
80
70
60
V
DS
= 10V
T
J
= - 40 C
140
120
25 C
o
o
Fig. 10. Forward Voltage Drop of Intrinsic Diode
160
g
f s
- Siemens
40
125 C
30
20
10
0
0
10
20
30
40
50
60
70
80
90
o
I
S
- Amperes
50
100
80
60
40
20
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
T
J
= 25 C
o
T
J
= 125 C
o
I
D
- Amperes
V
SD
- Volts
Fig. 11. Gate Charge
10
9
8
7
V
DS
= 100V
I
D
= 25A
I
G
= 10mA
10000
Fig. 12. Capacitance
C iss
Capacitance - PicoFarads
1000
V
GS
- Volts
6
5
4
3
2
1
0
0
5
10
15
20
25
30
35
100
Coss
10
Crss
f
= 1 MHz
1
1
10
100
1000
Q
G
- NanoCoulombs
V
DS
- Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA50N20X3
IXFP50N20X3
Fig. 13. Output Capacitance Stored Energy
4
3.5
3
100
R
DS(
on
)
Limit
25μs
Fig. 14. Forward-Bias Safe Operating Area
E
OSS
- MicroJoules
2
1.5
1
0.5
0
0
20
40
60
80
100
120
140
160
180
200
I
D
- Amperes
2.5
10
100μs
1
T
J
= 150 C
T
C
= 25 C
Single Pulse
0.1
1
10
DC
100
1,000
o
o
1ms
10ms
V
DS
- Volts
V
DS
- Volts
Fig. 15. Maximum Transient Thermal Impedance
1
0.1
Z
(th)JC
- K / W
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Second
© 2018 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_50N20X3(23G-S202) 12-15-17
