Preliminary Technical Information
X3-Class HiPerFET
TM
Power MOSFET
IXFA60N25X3
IXFP60N25X3
IXFQ60N25X3
V
DSS
I
D25
R
DS(on)
= 250V
= 60A
23m
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
TO-263 AA (IXFA)
G
S
D (Tab)
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
F
C
M
d
Weight
Test Conditions
T
J
= 25C to 150C
T
J
= 25C to 150C, R
GS
= 1M
Continuous
Transient
T
C
= 25C
T
C
= 25C, Pulse Width Limited by T
JM
T
C
= 25C
T
C
= 25C
I
S
I
DM
, V
DD
V
DSS
, T
J
150°C
T
C
= 25C
Maximum Ratings
250
250
20
30
60
120
30
700
20
320
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
V/ns
W
C
C
C
°C
°C
N/lb
Nm/lb.in
g
g
g
TO-220AB (IXFP)
G
DS
D (Tab)
TO-3P (IXFQ)
G
D
S
D (Tab)
G = Gate
S = Source
D
= Drain
Tab = Drain
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Force (TO-263)
Mounting Torque (TO-220 & TO-3P)
TO-263
TO-220
TO-3P
300
260
Features
10..65 / 2.2..14.6
1.13 / 10
2.5
3.0
5.5
International Standard Packages
Low R
DS(ON)
and Q
G
Avalanche Rated
Low Package Inductance
Advantages
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 250μA
V
DS
= V
GS
, I
D
= 1.5mA
V
GS
=
20V,
V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 125C
19
Characteristic Values
Min.
Typ.
Max.
250
2.5
4.5
V
V
Applications
High Power Density
Easy to Mount
Space Savings
100
nA
5
500
A
A
V
GS
= 10V, I
D
= 0.5
•
I
D25
, Note 1
23 m
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
DS100807B(9/17)
© 2017 IXYS CORPORATION, All Rights Reserved
IXFA60N25X3
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
g
fs
R
Gi
C
iss
C
oss
C
rss
Effective Output Capacitance
C
o(er)
C
o(tr)
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
TO-220
TO-3P
0.50
0.21
V
GS
= 10V, V
DS
= 0.5
•
V
DSS
, I
D
= 0.5
•
I
D25
Energy related
Time related
V
GS
= 0V
V
DS
= 0.8 • V
DSS
260
955
18
10
62
7
50
15
17
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.39
C/W
C/W
C/W
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 10V, I
D
= 0.5 • I
D25
, Note 1
Gate Input Resistance
Characteristic Values
Min.
Typ.
Max
30
50
1.9
3610
645
2
S
pF
pF
pF
IXFP60N25X3
IXFQ60N25X3
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 5 (External)
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
V
GS
= 0V
Repetitive, pulse Width Limited by T
JM
I
F
= I
S
, V
GS
= 0V, Note 1
I
F
= 30A, -di/dt = 100A/μs
V
R
= 100V
95
380
8
Characteristic Values
Min.
Typ.
Max
60
240
1.4
A
A
V
ns
nC
A
Note 1. Pulse test, t
300s, duty cycle, d 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
7,005,734B2
6,759,692
7,063,975B2
6,771,478B2 7,071,537
7,157,338B2
IXFA60N25X3
IXFP60N25X3
IXFQ60N25X3
o
Fig. 1. Output Characteristics @ T
J
= 25 C
60
V
GS
= 10V
8V
50
7V
200
250
o
Fig. 2. Extended Output Characteristics @ T
J
= 25 C
V
GS
= 10V
9V
8V
40
I
D
- Amperes
I
D
- Amperes
150
30
6V
100
7V
20
50
5V
5V
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0
0
5
10
15
20
25
30
6V
10
V
DS
- Volts
o
V
DS
- Volts
Fig. 3. Output Characteristics @ T
J
= 125 C
60
V
GS
= 10V
8V
50
7V
40
2.4
2.8
Fig. 4. R
DS(on)
Normalized to I
D
= 30A Value vs.
Junction Temperature
V
GS
= 10V
R
DS(on)
- Normalized
2.0
I
D
- Amperes
I
D
= 60A
I
D
= 30A
30
6V
1.6
20
5V
10
4V
0
0
0.5
1
1.5
2
2.5
3
1.2
0.8
0.4
-50
-25
0
25
50
75
100
125
150
V
DS
- Volts
T
J
- Degrees Centigrade
4.5
4.0
3.5
Fig. 5. R
DS(on)
Normalized to I
D
= 30A Value vs.
Drain Current
V
GS
= 10V
1.3
1.2
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
BV
DSS
/ V
GS(th)
- Normalized
R
DS(on)
- Normalized
T
J
= 125 C
3.0
2.5
2.0
1.5
1.0
0.5
0
20
40
60
80
100
120
140
160
180
200
220
T
J
= 25 C
o
o
1.1
1.0
0.9
0.8
BV
DSS
V
GS(th)
0.7
0.6
-60
-40
-20
0
20
40
60
80
100
120
140
160
I
D
- Amperes
T
J
- Degrees Centigrade
© 2017 IXYS CORPORATION, All Rights Reserved
IXFA60N25X3
IXFP60N25X3
IXFQ60N25X3
Fig. 7. Maximum Drain Current vs. Case Temperature
70
60
50
100
90
80
70
Fig. 8. Input Admittance
I
D
- Amperes
I
D
- Amperes
40
30
20
10
0
-50
-25
0
25
50
75
100
125
150
60
50
40
30
20
10
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
T
J
= 125 C
25 C
- 40 C
o
o
o
T
C
- Degrees Centigrade
V
GS
- Volts
Fig. 9. Transconductance
110
100
90
80
T
J
= - 40 C
300
250
o
Fig. 10. Forward Voltage Drop of Intrinsic Diode
350
g
f s
- Siemens
I
S
- Amperes
70
60
50
40
30
20
10
0
0
10
20
30
40
50
60
70
25 C
o
200
150
T
J
= 25 C
100
T
J
= 125 C
50
0
o
o
125 C
o
80
90
100
110
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I
D
- Amperes
V
SD
- Volts
Fig. 11. Gate Charge
10
9
8
7
V
DS
= 125V
I
D
= 30A
100000
Fig. 12. Capacitance
Capacitance - PicoFarads
I
G
= 10mA
10000
Ciss
1000
V
GS
- Volts
6
5
4
3
2
1
0
0
5
10
15
20
25
30
35
40
45
50
55
100
Coss
10
Crss
f
= 1 MHz
1
1
10
100
1000
Q
G
- NanoCoulombs
V
DS
- Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA60N25X3
IXFP60N25X3
IXFQ60N25X3
Fig. 13. Output Capacitance Stored Energy
8
7
100
6
1000
Fig. 14. Forward-Bias Safe Operating Area
R
DS(
on
)
Limit
E
OSS
- MicroJoules
I
D
- Amperes
5
4
3
2
10
100μs
1
1ms
0.1
T
J
= 150 C
T
C
= 25 C
Single Pulse
o
o
10ms
DC
1
0
0
20
40
60
80
100
120
140
160
180
200
220
240
0.01
1
10
100
1,000
V
DS
- Volts
V
DS
- Volts
Fig. 15. Maximum Transient Thermal Impedance
1
0.1
Z
(th)JC
- K / W
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Second
© 2017 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_60N25X3 (24-S301) 4-19-17
