PolarHV
TM
HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFH 14N80P
IXFQ 14N80P
IXFT 14N80P
IXFV 14N80P
IXFV 14N80PS
V
DSS
I
D25
R
DS(on)
t
rr
= 800 V
= 14 A
≤
720 mΩ
Ω
≤
250 ms
TO-247 (IXFH)
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Test Conditions
T
J
= 25°C to 175°C
T
J
= 25°C to 175°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, di/dt
≤
100 A/μs, V
DD
≤
V
DSS
,
T
J
≤
150°C, R
G
= 5
Ω
T
C
= 25°C
Maximum Ratings
800
800
±
30
±
40
14
40
7
30
500
10
400
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
mJ
V/ns
W
°C
°C
°C
°C
°C
PLUS220 (IXFV)
G
D
(TAB)
D (TAB)
TO-3P (IXFQ)
S
TO-268 (IXFT)
G
S
D (TAB)
G
D (TAB)
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-247, TO-3P)
PLUS220, PLUS220 SMD
TO-268, TO-3P
TO-247
300
260
D
S
1.13/10 Nm/lb.in.
2
5.5
6
g
g
g
PLUS220SMD (IXFV...S)
G
S
G = Gate
S = Source
D = Drain
TAB = Drain
D (TAB)
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250μA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
±30
V, V
DS
= 0 V
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 125°C
Characteristic Values
Min. Typ.
Max.
800
3.0
5.5
±100
25
1
V
V
nA
μA
mA
Features
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
DS99593E(07/06)
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
≤
300
μs,
duty cycle d
≤
2 %
720 mΩ
© 2006 IXYS All rights reserved
IXFH 14N80P IXFQ 14N80P
IXFT 14N80P IXFV 14N80P IXFV 14N80PS
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Min.
Typ.
Max.
8
15
3900
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
250
19
26
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
D25
R
G
= 5
Ω
(External)
29
62
27
61
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
18
20
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.31
°C/W
(TO-247, TO-3P)
0.21
°C/W
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
1
2
3
TO-247 (IXFH) Outline
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
V
DS
= 20 V; I
D
= 0.5 I
D25
, pulse test
Dim.
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
Test Conditions
V
GS
= 0 V
Repetitive
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Min.
Typ.
Max.
14
40
1.5
A
A
V
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A
1
A
2
2.2
2.6
b
1.0
1.4
1.65
2.13
b
1
b
2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P
3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 (IXFT) Outline
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
≤
300
μs,
duty cycle d
≤
2 %
I
F
= 25A,
-di/dt = 100 A/μs
V
R
= 100V
0.4
5
250
ns
μC
A
PLUS220SMD (IXFV_S) Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
IXFH 14N80P IXFQ 14N80P
IXFT 14N80P IXFV 14N80P IXFV 14N80PS
Fig. 1. Output Characteristics
@ 25ºC
14
V
GS
= 10V
7V
27
24
21
10
V
GS
= 10V
7V
Fig. 2. Extended Output Characteristics
@ 25ºC
12
I
D
- Amperes
8
6
I
D
- Amperes
6V
18
15
12
9
6V
4
5V
2
6
3
0
0
1
2
3
4
5
6
7
8
9
10
11
12
0
3
6
9
12
15
18
21
24
27
30
5V
0
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics
@ 125ºC
14
V
GS
= 10V
12
6V
10
2.8
2.5
3.1
Fig. 4. R
DS(on)
Normalized to I
D
= 7A Value vs.
Junction Temperature
V
GS
= 10V
R
DS(on)
- Normalized
I
D
- Amperes
2.2
1.9
1.6
1.3
1
I
D
= 14A
8
5V
6
I
D
= 7A
4
2
0.7
0.4
0
2
4
6
8
10
12
14
16
18
20
22
24
26
-50
-25
0
25
50
75
100
125
150
0
V
DS
- Volts
T
J
- Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= 7A Value vs.
Drain Current
2.8
2.6
2.4
V
GS
= 10V
T
J
= 125ºC
16
14
12
2.2
Fig. 6. Maximum Drain Current vs.
Case Temperature
R
DS(on)
- Normalized
I
D
- Amperes
T
J
= 25ºC
0
4
8
12
16
20
24
28
2
1.8
1.6
1.4
10
8
6
4
1.2
1
0.8
2
0
-50
-25
0
25
50
75
100
125
150
I
D
- Amperes
T
C
- Degrees Centigrade
© 2006 IXYS All rights reserved
IXFH 14N80P IXFQ 14N80P
IXFT 14N80P IXFV 14N80P IXFV 14N80PS
Fig. 7. Input Admittance
20
18
16
14
30
27
24
Fig. 8. Transconductance
g
f s
- Siemens
21
18
15
12
9
6
3
0
T
J
= - 40ºC
25ºC
125ºC
I
D
- Amperes
12
10
8
6
4
2
0
3.5
4
T
J
= 125ºC
25ºC
- 40ºC
4.5
5
5.5
6
0
2
4
6
8
10
12
14
16
18
20
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
45
40
35
10
9
8
7
V
DS
=400V
I
D
= 7A
I
G
= 10mA
Fig. 10. Gate Charge
I
S
- Amperes
30
V
GS
- Volts
T
J
= 25ºC
6
5
4
3
2
1
0
25
T
J
= 125ºC
20
15
10
5
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
0
10
20
30
40
50
60
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
10,000
f = 1 MHz
1.000
Fig. 13. Maximum Transient Thermal
Resistance
Capacitance - PicoFarads
C iss
R
(th)JC
- ºC / W
1,000
0.100
C oss
100
C rss
10
0
5
10
15
20
25
30
35
40
0.010
0.0001
0.001
0.01
0.1
1
10
V
DS
- Volts
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: F_14N80P (6J) 5-02-06.xls
IXFH 14N80P IXFQ 14N80P
IXFT 14N80P IXFV 14N80P IXFV 14N80PS
TO-3P-3L PACKAGE Outline
PLUS220 (IXFV) Outline
1. GATE
2. DRAIN (COLLECTOR)
3. SOURCE (EMITTER)
4. DRAIN (COLLECTOR)
ALL METAL AREA ARE TIN PLATED.
Ref: IXYS CO 0170 RA
© 2006 IXYS All rights reserved
