HiPerRF
TM
Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated,
Low Q
g
, Low
Intrinsic R
g
, High dV/dt,
Low t
rr
IXFH21N50F
IXFT21N50F
V
DSS
=
=
I
D25
R
DS(on)
≤
t
rr
≤
TO-247 (IXFH)
500V
21A
250mΩ
Ω
250ns
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
AR
E
AS
dV/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, Pulse Width Limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, di/dt < 100A/μs, V
DD
≤
V
DSS
T
J
≤
150°C, R
G
= 2Ω
T
C
= 25°C
Maximum Ratings
500
500
±
20
±
30
21
84
21
1.5
10
300
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
J
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
Features
RF capable MOSFETs
Double metal process for low gate
resistance
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic rectifier
Applications
DC-DC converters
Switched-mode and resonant-mode
power supplies, >500kHz switching
DC choppers
13.5 MHz industrial applications
Pulse generation
Laser drivers
RF amplifiers
Advantages
Space savings
High power density
G = Gate
S = Source
G
S
TAB
TAB
TO-268 (IXFT)
D
= Drain
TAB = Drain
Maximum Lead Temperature for Soldering
Plastic Body for 10s
Mounting Torque (TO-247)
TO-247
TO-268
300
260
1.13/10
6
4
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 1mA
V
DS
= V
GS
, I
D
= 4mA
V
GS
=
±
20V, V
DS
= 0V
V
DS
= V
DSS
V
GS
= 0V
T
J
= 125°C
Characteristic Values
Min.
Typ.
Max.
500
3.0
5.5
±
100
V
V
nA
50
μA
1.5 mA
250 mΩ
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1
© 2002 IXYS CORPORATION, All Rights Reserved
DS98884(01/02)
IXFH21N50F
IXFT21N50F
Symbol
Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
(TO-247)
0.21
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 10V, I
D
= 0.5 • I
D25
, Note 1
Characteristic Values
Min.
Typ.
Max.
12
17
2600
470
160
16
12
36
7.7
77
21
40
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.42
°C/W
°C/W
Dim.
e
∅
P
TO-247 (IXFH) Outline
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 2Ω (External)
Source-Drain Diode
T
J
= 25°C Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= I
S
, V
GS
= 0V, Note 1
I
F
= 21A, -di/dt = 100A/μs
V
R
= 100V, V
GS
= 0V
Characteristic Values
Min.
Typ.
Max.
21
84
1.5
A
A
V
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A
1
2.2
2.6
A
2
b
1.0
1.4
1.65
2.13
b
1
b
2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P
3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
250 ns
1.2
10
μC
A
TO-268 Outline
Note: 1. Pulse test, t
≤
300
μs,
duty cycle d
≤
2 %
Min Recommended Footprint
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
