PolarHT
TM
Power
MOSFET HiPerFET
TM
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFV74N20P
IXFV74N20PS
IXFH74N20P
V
DSS
I
D25
R
DS(on)
t
rr
=
=
≤
≤
200V
74A
34mΩ
Ω
200ns
PLUS220 (IXFV)
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dV/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
F
C
Weight
Test Conditions
T
J
= 25°C to 175°C
T
J
= 25°C to 175°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, V
DD
≤
V
DSS
, T
J
≤
175°C
T
C
= 25°C
Maximum Ratings
200
200
± 20
± 30
74
200
37
1
10
480
-55 ... +175
175
-55 ... +175
V
V
V
V
A
A
A
J
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
N/lb.
g
g
G
D
S
D (TAB)
PLUS220SMD (IXFV_S)
G
S
D (TAB)
TO-247 (IXFH)
D (TAB)
Maximum lead temperature for soldering
Plastic body for 10s
Mounting torque (TO-247)
Mounting force (PLUS220)
PLUS220 & PLUS220SMD
TO-247
300
260
1.13/10
11..65/2.5..14.6
4
6
G = Gate
S = Source
Features
D
= Drain
TAB = Drain
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 250μA
V
DS
= V
GS
, I
D
= 4mA
V
GS
=
±
20V, V
DS
= 0V
V
DS
= V
DSS
V
GS
= 0V
T
J
= 150°C
Characteristic Values
Min.
Typ.
Max.
200
2.5
5.0
±
100
25
250
V
V
nA
μA
μA
International standard packages
Fast recovery diode
Avalanche rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1
34 mΩ
© 2008 IXYS CORPORATION, All rights reserved
DS99209F(05/08)
IXFH74N20P IXFV74N20P
IXFV74N20PS
Symbol
Test Conditions
(T
J
= 25°C unless otherwise specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
(TO-247, PLUS220)
0.25
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
Resistive Switching Times
V
GS
= 1V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 4Ω (External)
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 10V, I
D
= 0.5 • I
D25
, Note 1
Characteristic Values
Min.
Typ.
Max.
30
44
3300
800
190
23
21
60
21
107
24
52
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.31
°C/W
°C/W
PLUS220 (IXFV) Outline
Source-Drain Diode
T
J
= 25°C unless otherwise specified)
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
V
GS
= 0V
Repetitive, pulse width limited by T
JM
I
F
= I
S
, V
GS
= 0V, Note 1
I
F
= 25A, -di/dt = 100A/μs
V
R
= 100V, V
GS
= 0V
Characteristic Values
Min.
Typ.
Max.
74
180
1.5
120
0.40
6
A
A
V
TO-247 (IXFH) Outline
200 ns
μC
A
∅
P
Note 1: Pulse test, t
≤
300μs; duty cycle, d
≤
2%.
PLUS220SMD (IXFV_S) Outline
Dim.
e
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
Millimeter
Min. Max.
A
4.7
5.3
A
1
2.2
2.54
A
2
2.2
2.6
b
1.0
1.4
1.65
2.13
b
1
b
2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P
3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
7,157,338B2
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
IXFH74N20P IXFV74N20P
IXFV74N20PS
Fig. 1. Output Characteristics
@ 25
º
C
80
70
60
V
GS
= 10V
9V
8V
200
180
160
V
GS
= 10V
9V
Fig. 2. Extended Output Characteristics
@ 25
º
C
I
D
- Amperes
50
40
30
20
10
0
0.0
0.4
0.8
1.2
1.6
I
D
- Amperes
7V
140
120
100
80
60
8V
7V
6V
6V
5V
40
20
0
5V
2.0
2.4
2.8
0
2
4
6
8
10
12
14
16
18
20
V
D S
- Volts
Fig. 3. Output Characteristics
@ 150
º
C
80
70
60
V
GS
= 10V
9V
8V
7V
3.0
2.6
V
GS
= 10V
V
D S
- Volts
Fig. 4. R
DS(on
)
Normalized to 0.5 I
D25
Value
vs. Junction Temperature
R
D S ( o n )
- Normalized
I
D
- Amperes
50
40
30
20
10
0
0
1
2
3
4
5
6
7
5V
6V
2.2
I
D
= 74A
1.8
I
D
= 37A
1.4
1.0
0.6
-50
-25
0
25
50
75
100
125
150
175
V
D S
- Volts
Fig. 5. R
DS(on)
Normalized to 0.5 I
D25
Value
vs. I
D
5.0
4.5
V
GS
= 10V
15V
-
80
70
T
J
- Degrees Centigrade
Fig. 6. Drain Current vs. Case
Temperature
R
D S ( o n )
- Normalized
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
20
---
T
J
= 175ºC
60
I
D
- Amperes
T
J
= 25ºC
40
60
80
100 120 140 160 180 200
50
40
30
20
10
0
-50
-25
0
25
50
75
100
125
150
175
I
D
- Amperes
T
C
- Degrees Centigrade
© 2008 IXYS CORPORATION, All rights reserved
IXFH74N20P IXFV74N20P
IXFV74N20PS
Fig. 7. Input Admittance
100
90
80
50
60
T
J
= - 40ºC
Fig. 8. Transconductance
60
50
40
30
20
10
0
3.5
4.0
4.5
5.0
5.5
S
g
f s
- Siemens
I
D
- Amperes
70
40
30
20
10
0
25ºC
150ºC
T
J
= 150ºC
25ºC
- 40ºC
6.0
6.5
7.0
7.5
0
20
40
60
80
100
120
V
G
- Volts
I
D
- Amperes
Fig. 9. Source Current vs.
Source-To-Drain Voltage
200
180
160
10
9
8
7
Fig. 10. Gate Charge
V
DS
= 100V
I
D
= 37A
I
G
= 10m A
I
S
- Amperes
140
V
G S
- Volts
T
J
= 150ºC
T
J
= 25ºC
120
100
80
60
40
20
0
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
6
5
4
3
2
1
0
0
10
20
30
40
G
50
60
70
80
90 100 110
V
S
D
- Volts
Q
- nanoCoulombs
Fig. 11. Capacitance
10000
1000
Fig. 12. Forward-Bias Safe Operating Area
f
Capacitance - picoFarads
= 1MHz
C
iss
R
DS(on)
T
J
= 175ºC
T
C
= 25ºC
25µs
100µs
I
D
- Amperes
100
1000
C
oss
1ms
10
10m s
DC
C
rss
100
0
5
10
15
20
25
30
35
40
1
10
100
1000
V
D S
- Volts
V
D S
- Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: F_74N20P(6S)6-15-05-D
IXFH74N20P IXFV74N20P
IXFV74N20PS
Fig. 13. Maximum Transient Thermal Impedance
1.00
- ºC / W
Z
( t h
0.01
0.1
1
10
100
1000
)JC
0.10
Pulse Width - milliseconds
© 2008 IXYS CORPORATION, All rights reserved
IXYS REF: F_74N20P(6S)6-15-05-D
