HiPerFET
TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, Low Q
g
, High dv/dt
V
DSS
IXFK/IXFX 30N50Q
IXFK/IXFX 32N50Q
I
D25
R
DS(on)
500 V 30 A 0.16
Ω
500 V 32 A 0.15
Ω
t
rr
≤
250 ns
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C,
pulse width limited by T
JM
30N50Q
32N50Q
30N50Q
32N50Q
Maximum Ratings
500
500
±20
±30
30
32
120
128
32
45
1500
5
416
-55 ... + 150
150
-55 ... + 150
V
V
V
V
A
A
A
A
A
mJ
mJ
V/ns
W
°C
°C
°C
°C
Nm/lb.in.
g
g
PLUS 247
TM
(IXFK)
G
(TAB)
D
TO-264 AA (IXFK)
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
,
T
J
≤
150°C, R
G
= 2
Ω
T
C
= 25°C
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
l
l
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247
TO-268
300
1.13/10
6
4
l
l
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min.
typ.
max.
500
2.5
4.5
±100
T
J
= 25°C
T
J
= 125°C
32N50Q
30N50Q
100
1
0.15
0.16
V
V
nA
µA
mA
Ω
Ω
l
l
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250 uA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 I
D25
Note 1
IXYS advanced low Q
g
process
Low gate charge and capacitances
- easier to drive
- faster switching
International standard packages
Low R
DS (on)
Unclamped Inductive Switching (UIS)
rated
Molding epoxies meet UL 94 V-0
flammability classification
Advantages
l
l
l
PLUS 247
TM
package for clip or spring
mounting
Space savings
High power density
© 2002 IXYS All rights reserved
98604D (06/02)
IXFK 30N50Q
IXFX 30N50Q
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
Note 1
18
28
3950
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
640
210
35
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
G
= 2
Ω
(External),
42
75
20
150
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
26
85
0.3
0.15
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
K/W
K/W
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
Q
R
Dim.
Terminals:
IXFK 32N50Q
IXFX 32N50Q
PLUS 247
TM
Outline
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCK
V
DS
= 10 V; I
D
= 0.5 I
D25
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
Test Conditions
V
GS
= 0 V
Repetitive;
pulse width limited by T
JM
I
F
= I
S
, V
GS
= 0 V, Note 1
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
32
128
1.5
250
A
A
V
ns
µC
A
Millimeter
Min.
Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
TO-264 AA Outline
I
F
= 25A, -di/dt = 100 A/µs, V
R
= 100 V
0.75
7.5
Dim.
Note: 1. Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
Millimeter
Min.
Max.
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91
26.16
19.81
19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32
20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
Min.
Inches
Max.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
IXFK 30N50Q
IXFX 30N50Q
Figure 1. Output Characteristics at 25
O
C
80
70
60
T
J
= 25
O
C
V
GS
=10V
9V
8V
7V
6V
IXFK 32N50Q
IXFX 32N50Q
Figure 2. Output Characteristics at 125
O
C
50
T
J
= 125
O
C
40
V
GS
= 9V
8V
7V
6V
I
D
- Amperes
50
40
30
20
10
0
I
D
- Amperes
30
5V
20
10
4V
5V
0
4
8
12
16
20
0
0
4
8
12
16
20
V
DS
- Volts
V
DS
- Volts
Figure 3. R
DS(on)
normalized to 15A/25
O
C vs. I
D
2.8
V
GS
= 10V
Figure 4. R
DS(on)
normalized to 15A/25
O
C vs. T
J
2.8
V
GS
= 10V
R
DS(ON)
- Normalized
Tj=125 C
0
R
DS(ON)
- Normalized
2.4
2.0
1.6
Tj=25
0
C
2.4
I
D
= 32A
2.0
I
D
= 16A
1.6
1.2
0.8
25
1.2
0.8
0
10
20
30
40
50
60
50
75
100
125
150
I
D
- Amperes
T
J
- Degrees C
Figure 5. Drain Current vs. Case Temperature
40
IXF_32N50Q
32
Figure 6. Admittance Curves
50
40
I
D
- Amperes
24
16
8
0
I
D
- Amperes
IXF_30N50Q
30
20
T
J
= 125
o
C
T
J
= 25
o
C
10
0
2
3
4
5
6
-50
-25
0
25
50
75
100 125 150
T
C
- Degrees C
V
GS
- Volts
© 2002 IXYS All rights reserved
IXFK 30N50Q
IXFX 30N50Q
Figure 7. Gate Charge
14
12
10
Vds=300V
I
D
=16A
I
G
=10mA
IXFK 32N50Q
IXFX 32N50Q
Figure 8. Capacitance Curves
10000
Ciss
F = 1MHz
Capacitance - pF
V
GS
- Volts
8
6
4
2
0
0
50
100
150
200
250
Coss
1000
Crss
100
0
5
10
15
20
25
Gate Charge - nC
V
DS
- Volts
Figure 9. Forward Voltage Drop of the
Intrinsic Diode
100
V
GS
= 0V
80
I
D
- Amperes
60
T
J
=125
O
C
40
20
T
J
=25
O
C
0
0.4
0.6
0.8
1.0
1.2
V
SD
- Volts
Figure 10. Transient Thermal Resistance
0.40
0.20
R(th)
JC
- K/W
0.10
0.08
0.06
0.04
0.02
0.01
10
-3
10
-2
10
-1
10
0
10
1
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
