V
CES
Low V
CE(sat)
IGBT with Diode
High speed IGBT with Diode
IXGH 17 N100U1
IXGH 17 N100AU1
1000 V
1000 V
I
C25
34 A
34 A
V
CE(sat)
3.5 V
4.0 V
Combi Packs
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 90°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
VJ
= 125°C, R
G
= 82
Ω
Clamped inductive load, L = 100
µH
T
C
= 25°C
Maximum Ratings
1000
1000
±20
±30
34
17
68
I
CM
= 34
@ 0.8 V
CES
150
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
TO-247 AD
G
C
E
C = Collector,
TAB = Collector
G = Gate,
E = Emitter,
Features
W
°C
°C
°C
l
l
l
l
Mounting torque (M3)
1.13/10 Nm/lb.in.
6
300
g
°C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
l
l
International standard package
JEDEC TO-247 AD
IGBT and anti-parallel FRED in one
package
2nd generation HDMOS
TM
process
Low V
CE(sat)
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low I
RM
Applications
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
1000
2.5
T
J
= 25°C
T
J
= 125°C
5.5
500
8
±100
17N100U1
17N100AU1
3.5
4.0
V
V
µA
mA
nA
V
V
l
l
l
l
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 4.5 mA, V
GE
= 0 V
= 500
µA,
V
CE
= V
GE
l
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
V
CE
= 0.8 • V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
±20
V
I
C
= I
C90
, V
GE
= 15 V
Advantages
l
l
l
Saves space (two devices in one
package)
Easy to mount (isolated mounting
screw hole)
Reduces assembly time and cost
© 1996 IXYS All rights reserved
91754D (3/96)
IXGH 17N100U1
IXGH 17N100AU1
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
6
15
1500
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
210
40
100
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
Inductive load, T
J
= 25°C
°
I
C
= I
C90
, V
GE
= 15 V, L = 300
µH,
V
CE
= 0.8 V
CES
, R
G
= R
off
= 82
Ω
Remarks: Switching times
may increase
for V
CE
(Clamp) > 0.8 • V
CES
,
higher T
J
or increased R
G
Inductive load, T
J
= 125°C
°
I
C
= I
C90
, V
GE
= 15 V, L = 300
µH
V
CE
= 0.8 V
CES
, R
G
= R
off
= 82
Ω
Remarks: Switching times
may increase
for V
CE
(Clamp) > 0.8 • V
CES
,
higher T
J
or increased R
G
17N100U1
17N100AU1
17N100U1
17N100AU1
17N100U1
17N100AU1
17N100AU1
20
60
100
200
500
750
450
3
100
200
2.5
700
1200
750
8
6
1000
2000
1000
1000
750
120
30
90
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
mJ
ns
ns
mJ
ns
ns
ns
mJ
mJ
0.83 K/W
0.25
K/W
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
TO-247 AD Outline
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCK
I
C
= I
C90
; V
CE
= 10 V,
Pulse test, t
≤
300
µs,
duty cycle
≤
2 %
Reverse Diode (FRED)
Symbol
V
F
I
RM
t
rr
R
thJC
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
2.5
16
120
35
18
50
V
A
ns
ns
I
F
= I
C90
, V
GE
= 0 V,
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
I
F
= I
C90
, V
GE
= 0 V, -di
F
/dt = 240 A/µs
V
R
= 540 V
T
J
= 125°C
I
F
= 1 A; -di/dt = 100 A/µs; V
R
= 30 V T
J
= 25°C
1 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXGH 17N100U1
IXGH 17N100AU1
Fig. 1 Saturation Characteristics
35
T
J
= 25°C
Fig. 2 Output Characterstics
V
GE
= 15V
30
13V
11V
9V
150
T
J
= 25°C
V
GE
= 15V
13V
125
20
15
10
5
0
0
1
2
3
4
5
6
7
7V
I
C
- Amperes
I
C
- Amperes
25
100
75
50
9V
11V
25
7V
0
0
2
4
6
8
10 12 14 16 18 20
V
CE
- Volts
V
CE
- Volts
Fig. 3 Collector-Emitter Voltage
vs. Gate-Emitter Voltage
10
9
8
7
T
J
= 25°C
Fig. 4 Temperature Dependence
of Output Saturation Voltage
1.4
I
C
= 34A
1.3
V(sat) - Normalized
1.2
1.1
1.0
0.9
0.8
0.7
0.6
I
C
= 8.5A
I
C
= 17A
V
CE
- Volts
6
5
4
3
2
1
0
5
6
7
8
9
10 11 12 13 14 15
I
C
= 34A
I
C
= 17A
I
C
= 8.5A
-50
-25
0
25
50
75
100 125 150
V
GE
- Volts
T
J
- Degrees C
Fig. 5 Input Admittance
35
V
CE
= 10V
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
1.2
V
GE(th)
I
C
= 250µA
30
I
C
- Amperes
25
20
15
10
5
0
0
1
2
3
4
5
6
7
8
9
10
T
J
= 25°C
T
J
= 125°C
T
J
= - 40°C
BV / V
(th)
- Normalized
1.1
1.0
0.9
0.8
0.7
0.6
-50
BV
CES
I
C
= 3mA
-25
0
25
50
75
100 125 150
V
CE
- Volts
17N100G1 JNB
T
J
- Degrees C
© 1996 IXYS All rights reserved
IXGH 17N100U1
IXGH 17N100AU1
Fig.7 Gate Charge
Fig.8 Turn-Off Safe Operating Area
15
13
11
V
CE
= 800
I
C
= 17A
I
G
= 10mA
100
10
I
C
- Amperes
T
J
= 125°C
dV/dt < 3V/ns
V
GE
- Volts
9
7
5
3
1
1
0.1
0.01
0
10 20 30 40 50 60 70 80 90 100
0
200
400
600
800
1000
Gate Charge - (nC)
V
CE
- Volts
Fig.9 Capacitance Curves
2000
f = 1MHz
1750
Capacitance - pF
1500
1250
1000
750
500
250
0
0
5
10
15
20
25
C
res
C
oes
C
ies
17N100g2.JNB
V
CE
- Volts
Fig.10 Transient Thermal Impedance
1
D=0.5
D=0.2
Z
thjc
(K/W)
D=0.1
0.1
D=0.05
D=0.02
D=0.01
Single Pulse
D = Duty Cycle
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXGH 17N100U1
IXGH 17N100AU1
Fig.11 Maximum Forward Voltage Drop
100
80
50
40
Fig.12 Peak Forward Voltage V
FR
and
Forward Recovery Time t
FR
1000
T
J
= 125°C
I
F
=37A
V
FR
800
600
400
t
fr
Current - Amperes
60
T
J
= 100°C
30
20
10
0
40
T
J
= 150°C
20
0
0.5
T
J
= 25°C
200
0
600
1.0
1.5
2.0
2.5
3.0
3.5
0
100
200
300
400
500
Voltage Drop - Volts
di
F
/dt - A/µs
Fig.13 Junction Temperature Dependence
off I
RM
and Q
r
1.4
1.2
1.0
0.8
I
RM
Fig.14 Reverse Recovery Chargee
4
T
J
= 100°C
V
R
= 540V
max.
I
F
= 30A
Q
r
- nanocoulombs
Normalized I
RM
/Q
r
3
typ.
I
F
= 60A
I
F
= 30A
I
F
= 15A
2
0.6
0.4
0.2
0.0
0
40
80
120
160
Q
r
1
0
1
10
100
1000
T
J
- Degrees C
di
F
/dt - A/µs
Fig.15 Peak Reverse Recovery Current
50
40
T
J
= 100°C
V
R
= 540V
Fig.16 Reverse Recovery Time
0.8
max.
I
F
= 30A
T
J
= 100°C
V
R
= 540V
max.
I
F
= 30A
30
20
10
0
200
400
600
typ.
I
F
= 60A
I
F
= 30A
I
F
= 15A
t
rr
- nanoseconds
0.6
typ.
I
F
= 60A
I
F
= 30A
I
F
= 15A
I
RM
- Amperes
0.4
0.2
0.0
0
200
400
600
di
F
/dt - A/µs
di
F
/dt - A/µs
© 1996 IXYS All rights reserved
t
fr
- nanoseconds
V
FR
- Volts
