IXGH 40N120A2
IXGT 40N120A2
High Voltage IGBT
Low V
CE(sat)
Preliminary Data Sheet
IXGH 40N120A2
IXGT 40N120A2
V
CES
= 1200 V
I
C25
= 75 A
V
CE(sat)
≤
2.0 V
Symbol
V
CES
V
CES
V
GES
V
GEM
I
C25
I
C110
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C
Continuous
Transient
T
C
= 25°C, IGBT chip capability
T
C
= 110°C
T
J
≤
150°C, tp < 300
μs
V
GE
= 15 V, T
VJ
= 150°C, R
G
= 5
Ω
Clamped inductive load, V
CE
< 960 V
T
C
= 25°C
Maximum Ratings
1200
1200
± 20
± 30
75
40
160
I
CM
= 80
360
-55 ... +150
150
-55 ... +150
V
V
V
V
G
C
TO-247 (IXFH)
A
A
A
A
E
(TAB)
TO-268 (IXGT)
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
Features
G
G = Gate
E = Emitter
E
C (TAB)
C = Collector
TAb = Collector
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 seconds
Plastic body for 10 seconds
Mounting torque (ixgh)
(IXGH)
(IXGT)
300
260
1.3/10
6.0
4.0
•
International standard packages
•
Low V
CE(sat)
- for minimum on-state conduction
•
Symbol Test Conditions
(T
J
= 25°C unless otherwise specified)
V
GE(th)
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
= 1 mA, V
GE
= 0 V
I
C
= 250
μA,
V
CE
= V
GE
V
CE
= V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
= ±20 V
I
C
= I
C110
, V
GE
= 15V
T
J
= 125°C
Characteristic Values
Min. Typ. Max.
1200
3.0
V
5.0 V
50
μA
1mA
± 100 nA
2.0 V
losses
MOS Gate turn-on
- drive simplicity
Applications
•
•
•
•
•
•
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Capacitor discharge
© 2005 IXYS All rights reserved
DS99509 (12/05)
IXGH 40N120A2
IXGT 40N120A2
Symbol
Test Conditions
(T
J
= 25°C unless otherwise specified)
g
fs
I
C(ON)
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCS
(TO-247)
0.25
Note 1: Pulse test, t
≤
300
μs,
duty cycle
≤
2 %
Inductive load, T
J
= 125°C
I
C
= I
C110
, V
GE
= 15 V
V
CE
= 0.8 V
CES
, R
G
= 2
Ω
Inductive load, T
J
= 25°C
I
C
= I
C110
, V
GE
= 15 V
V
CE
= 0.8 V
CES
, R
G
= 2
Ω
I
C
= I
C110
, V
GE
= 15 V, V
CE
= 0.5 V
CES
I
C
= I
C110
, V
CE
= 10 V
V
GE
= 10 V, V
CE
= 10 V
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
Characteristic Values
Min. Typ.
Max.
28
40
195
3150
165
70
136
19
54
22
41
420
800
15
19
36
3.5
730
1570
35
800
1200
25
S
A
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
0.35 K/W
K/W
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
1
2
3
TO-247 AD Outline
Dim.
Millimeter
Min. Max.
A
4.7
5.3
A
1
2.2
2.54
A
2
2.2
2.6
b
1.0
1.4
1.65
2.13
b
1
b
2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P
3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline (IXGT)
PRELIMINARY TECHNICAL
INFORMATION
The product presented herein is under
development. The Technical Specifications
offered are derived from data gathered
during objective characterizations of
preliminary engineering lots; but also may
yet contain some information supplied during
a subjective pre-production design evalua-
tion. IXYS reserves the right to change
limits, test conditions, and dimensions
without notice.
TO-268: Min. Recommended Footprint
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
IXGH 40N120A2
IXGT 40N120A2
Fig. 1. Output Characteristics
@ 25ºC
80
70
60
210
50
40
7V
30
20
60
10
0
0
0.4
0.8
1.2
1.6
2
2.4
2.8
30
0
0
2
4
6
8
10
12
14
16
18
20
7V
9V
11V
V
GE
= 15V
13V
11V
300
270
240
V
GE
= 15V
13V
Fig. 2. Exteded Output Characteristics
@ 25ºC
I
C
-
Amperes
I
C
- Amperes
180
150
9V
120
90
V
CE
- Volts
V
CE
- Volts
Fig. 3. Output Characteristics
@ 125ºC
80
70
60
V
GE
= 15V
13V
11V
1.6
1.5
1.4
9V
50
40
30
20
10
0
0
0.5
1
1.5
2
2.5
3
7V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
V
GE
= 15V
V
CE(sat)
- Normalized
I
C
= 80A
I
C
- Amperes
1.3
1.2
1.1
1.0
0.9
I
C
= 20A
I
C
= 40A
5V
0.8
0.7
-50
-25
0
25
50
75
100
125
150
V
CE
- Volts
T
J
- Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
5
6
7
8
9
10
11
12
13
14
15
I
C
= 80A
40A
20A
T
J
= 25ºC
200
180
160
140
Fig. 6. Input Admittance
T
J
= - 40ºC
25ºC
125ºC
I
C
-
Amperes
V
CE
- Volts
120
100
80
60
40
20
0
4.5
5.5
6.5
7.5
8.5
9.5
10.5
V
GE
- Volts
V
GE
- Volts
© 2005 IXYS All rights reserved
IXGH 40N120A2
IXGT 40N120A2
Fig. 7. Transconductance
55
50
45
1900
Fig. 8. Inductive Turn-off Switching Times vs.
Gate Resistance
2000
t
f
I
C
= 20A, 80A
V
CE
= 960V
t
d(off)
- - - -
1100
1000
T
J
= 125ºC, V
GE
= 15V
35
30
25
20
15
10
5
0
0
30
60
90
120
150
180
210
T
J
= - 40ºC
25ºC
125ºC
t
f
- Nanoseconds
40
t
d(off)
- Nanoseconds
1800
1700
I
C
= 40A
1600
1500
900
800
700
600
g
f s
-
Siemens
I
C
= 20A, 80A
1400
1300
2
3
4
5
6
7
8
9
10
500
400
I
C
- Amperes
R
G
- Ohms
Fig. 9. Inductive Turn-off Switching Times vs.
Collector Current
2000
1800
T
J
= 125ºC
1600
1400
1200
1000
800
600
20
30
40
50
60
70
80
1000
900
Fig. 10. Inductive Turn-off Switching Times vs.
Junction Temperature
2000
1000
t
f
1800
V
CE
= 960V
t
d(off)
- - - -
900
R
G
= 2
Ω
, V
GE
= 15V
t
d(off)
- Nanoseconds
t
f
- Nanoseconds
R
G
= 2
Ω
, V
GE
= 15V
V
CE
= 960V
700
600
500
400
300
t
f
- Nanoseconds
t
f
t
d(off)
- - - -
800
t
d(off)
- Nanoseconds
1600
1400
1200
1000
800
600
25
35
45
55
65
75
85
95
105
115
I
C
= 80A, 20A
I
C
= 20A, 40A, 80A
800
700
600
500
400
300
125
T
J
= 25ºC
I
C
- Amperes
T
J
- Degrees Centigrade
Fig. 11. Inductive Turn-on Switching Times vs.
Gate Resistance
150
Fig. 12. Inductive Turn-on Switching Times vs.
Collector Current
100
25
t
r
135
120
V
CE
= 960V
t
d(on)
- - - -
65
60
55
t
r
90
80
V
CE
= 960V
t
d(on)
- - - -
24
23
22
21
T
J
= 125ºC, V
GE
= 15V
R
G
= 2
Ω
, V
GE
= 15V
t
d(on)
- Nanoseconds
t
d(on)
- Nanoseconds
t
r
- Nanoseconds
t
r
- Nanoseconds
105
90
75
60
45
30
15
0
2
3
4
5
6
I
C
= 80A
50
45
40
70
60
T
J
= 25ºC
50
40
30
20
10
20
30
40
50
60
70
80
I
C
= 40A
20
19
18
17
16
35
30
I
C
= 20A
25
20
15
T
J
= 125ºC
7
8
9
10
R
G
- Ohms
I
C
- Amperes
IXYS reserves the right to change limits, test conditions and dimensions.
IXGH 40N120A2
IXGT 40N120A2
Fig. 13. Inductive Turn-on Switching Times vs.
Junction Temperature
110
100
90
I
C
= 80A
25
24
23
16
14
12
V
CE
= 600V
I
C
= 40A
I
G
= 10 mA
Fig. 14. Gate Charge
t
r
- Nanoseconds
80
70
60
50
40
30
20
I
C
= 20A
10
25
35
45
55
65
75
I
C
= 40A
t
r
V
CE
= 960V
t
d(on)
- - - -
t
d(on)
- Nanoseconds
21
20
19
18
17
16
15
125
V
GE
- Volts
R
G
= 2
Ω
, V
GE
= 15V
22
10
8
6
4
2
0
0
20
40
60
80
100
120
140
85
95
105
115
T
J
- Degrees Centigrade
Q
G
- NanoCoulombs
Fig. 15. Capacitance
10,000
f = 1 MHz
80
90
Fig. 16. Reverse-Bias Safe Operating Area
Capacitance - PicoFarads
C ies
70
I
C
- Amperes
1,000
60
50
40
30
C oes
100
C res
20
10
T
J
= 125ºC
R
G
= 5
Ω
dV / dT < 10V / ns
10
0
5
10
15
20
25
30
35
40
0
200
300
400
500
600
700
800
900
1000 1100 1200
V
CE
- Volts
V
CE
- Volts
Fig. 17. Maximum Transient Thermal Resistance
1.00
R
(th)JC
- ºC / W
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2005 IXYS All rights reserved
