型号
- 型号
- 关键词
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-264AA, TO-264AA, 3 PIN
厂商名称：IXYS
器件标准：
| 型号 | IXGK50N60B | IXGH50N60B | IXGT50N60B |
|---|---|---|---|
| 描述 | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-264AA, TO-264AA, 3 PIN | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-268, D3PAK-3 |
| 是否无铅 | 不含铅 | 不含铅 | 不含铅 |
| 是否Rohs认证 | 符合 | 符合 | 符合 |
| 厂商名称 | IXYS | IXYS | IXYS |
| 零件包装代码 | TO-264AA | TO-247AD | TO-268 |
| 包装说明 | TO-264AA, 3 PIN | FLANGE MOUNT, R-PSFM-T3 | D3PAK-3 |
| 针数 | 3 | 3 | 3 |
| Reach Compliance Code | compliant | compliant | compliant |
| 外壳连接 | COLLECTOR | COLLECTOR | COLLECTOR |
| 最大集电极电流 (IC) | 75 A | 75 A | 75 A |
| 集电极-发射极最大电压 | 600 V | 600 V | 600 V |
| 配置 | SINGLE | SINGLE | SINGLE |
| 门极发射器阈值电压最大值 | 5 V | 5 V | 5 V |
| 门极-发射极最大电压 | 20 V | 20 V | 20 V |
| JEDEC-95代码 | TO-264AA | TO-247AD | TO-268 |
| JESD-30 代码 | R-PSFM-T3 | R-PSFM-T3 | R-PSSO-G2 |
| 元件数量 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 2 |
| 最高工作温度 | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大功率耗散 (Abs) | 300 W | 250 W | 300 W |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | YES |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | GULL WING |
| 端子位置 | SINGLE | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管应用 | POWER CONTROL | POWER CONTROL | POWER CONTROL |
| 晶体管元件材料 | SILICON | SILICON | SILICON |
| 标称断开时间 (toff) | 450 ns | 450 ns | 450 ns |
| 标称接通时间 (ton) | 100 ns | 100 ns | 100 ns |
| ECCN代码 | - | EAR99 | EAR99 |
| 其他特性 | - | FAST | FAST |
