GenX3
TM
600V IGBT
with Diode
High-Speed Low-Vsat PT
IGBTs 40-100 kHz Switching
IXGN72N60C3H1
V
CES
I
C110
V
CE(sat)
t
fi(typ)
=
=
≤
£
=
600V
52A
2.50V
55ns
SOT-227B, miniBLOC
E153432
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
CM
I
A
E
AS
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
V
ISOL
M
d
Weight
50/60Hz
I
ISOL
≤
1mA
t = 1min
t = 1s
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GE
= 1MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 110°C
T
C
= 25°C, 1ms
T
C
= 25°C
T
C
= 25°C
V
GE
= 15V, T
VJ
= 125°C, R
G
= 2Ω
Clamped Inductive Load
T
C
= 25°C
Maximum Ratings
600
600
±20
±30
78
52
360
50
500
I
CM
= 150
@ V
CE
≤
V
CES
360
-55 ... +150
150
-55 ... +150
2500
3000
1.5/13
1.3/11.5
30
W
°C
°C
°C
V~
V~
Nm/lb.in.
Nm/lb.in.
g
High Power Density
Low Gate Drive Requirement
Applications
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
= 250μA, V
CE
= V
GE
V
CE
= V
CES
, V
GE
= 0V
V
CE
= 0V, V
GE
=
±20V
I
C
= 50A, V
GE
= 15V, Note 1
T
J
= 125°C
2.10
1.65
T
J
= 125°C
Characteristic Values
Min.
Typ.
Max.
3.0
5.5
250
3
±100
2.50
V
μA
mA
nA
V
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
V
V
V
V
A
A
A
A
mJ
A
C
G = Gate, C = Collector, E = Emitter
either emitter terminal can be used as
Main or Kelvin Emitter
E
G
E
Features
Optimized for Low Switching Losses
Square RBSOA
Aluminium Nitride Isolation
- High Power Dissipation
Isolation Voltage 3000V~
Avalanche Rated
Anti-Parallel Ultra Fast Diode
International Standard Package
Advantages
Mounting Torque
Terminal Connection Torque
© 2009 IXYS CORPORATION, All Rights Reserved
DS100053A(11/09)
IXGN72N60C3H1
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCS
°
Inductive load, T
J
= 125°C
I
C
= 50A, V
GE
= 15V
V
CE
= 480V, R
G
= 2Ω, Note 2
I
C
= 50A, V
GE
= 15V, V
CE
= 0.5
•
V
CES
V
CE
= 25V, V
GE
= 0V, f = 1MHz
I
C
= 50A, V
CE
= 10V, Note 1
Characteristic Values
Min.
Typ.
Max.
33
55
4780
330
117
174
33
72
27
Inductive load, T
J
= 25°C
°
I
C
= 50A, V
GE
= 15V
V
CE
= 480V, R
G
= 2Ω, Note 2
37
1.03
77
55
0.48
26
36
1.48
120
124
0.93
0.05
130
110
0.95
S
pF
pF
pF
nC
nC
nC
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
0.35
°C/W
°C/W
M4 screws (4x) supplied
SOT-227B miniBLOC
Reverse Diode (FRED)
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
V
F
I
RM
t
rr
R
thJC
I
F
= 60A, V
GE
= 0V, Note 1
I
F
= 60A, V
GE
= 0V,
-di
F
/dt = 200A/μs, V
R
= 300V
T
J
= 150°C
T
J
= 100°C
Characteristic Values
Min.
Typ.
Max.
1.6
1.4
8.3
140
2.0
1.8
V
V
A
ns
0.42 °C/W
Notes:
1. Pulse test, t
≤
300μs, duty cycle, d
≤
2%.
2. Switching times & energy losses may increase for higher V
CE
(Clamp), T
J
or R
G
.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXGN72N60C3H1
Fig. 1. Output Characteristics @ T
J
= 25ºC
100
90
80
70
V
GE
= 15V
13V
11V
9V
350
300
250
V
GE
= 15V
13V
11V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
60
50
40
30
20
10
0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
7V
I
C
-
Amperes
I
C
- Amperes
200
9V
150
100
7V
50
5V
0
0
2
4
5V
6
8
10
12
14
V
CE
- Volts
V
CE
- Volts
Fig. 3. Output Characteristics @ T
J
= 125ºC
100
90
80
70
V
GE
= 15V
13V
11V
1.3
1.2
9V
1.1
1.0
0.9
0.8
0.7
Fig. 4. Dependence of V
CE(sat)
on
JunctionTemperature
V
GE
= 15V
V
CE(sat)
- Normalized
I
C
= 100A
I
C
- Amperes
60
50
40
30
20
10
0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
5V
7V
I
C
= 50A
I
0.6
0.5
0
25
50
C
= 25A
75
100
125
150
V
CE
- Volts
T
J
- Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
5.0
4.5
4.0
T
J
= 25ºC
100
90
80
I
= 100A
50A
25A
70
Fig. 6. Input Admittance
I
C
-
Amperes
C
V
CE
- Volts
3.5
3.0
2.5
2.0
1.5
6
7
8
60
50
40
30
20
10
0
T
J
= 125ºC
25ºC
- 40ºC
9
10
11
12
13
14
15
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
V
GE
- Volts
V
GE
- Volts
© 2009 IXYS CORPORATION, All Rights Reserved
IXGN72N60C3H1
Fig. 7. Transconductance
90
80
70
25ºC
T
J
= - 40ºC
14
12
10
8
6
4
2
0
0
10
20
30
40
50
60
70
80
90
100
0
20
40
60
80
100
120
140
160
180
16
V
CE
= 300V
I
C
= 50A
I
G
= 10mA
Fig. 8. Gate Charge
g
f s
-
Siemens
60
50
40
30
20
10
0
V
GE
- Volts
125ºC
I
C
- Amperes
Q
G
- NanoCoulombs
Fig. 9. Capacitance
10,000
160
140
Cies
Fig. 10. Reverse-Bias Safe Operating Area
Capacitance - PicoFarads
120
1,000
Coes
I
C
- Amperes
100
80
60
40
20
0
100
T
J
= 125ºC , R
G
= 2Ω
dv / dt < 10V / ns
100
Cres
f
= 1 MHz
10
0
5
10
15
20
25
30
35
40
200
300
400
500
600
V
CE
- Volts
V
CE
- Volts
Fig. 11. Maximum Transient Thermal Impedance
1.00
Z
(th)JC
- ºC / W
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGN72N60C3H1
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
5.0
4.5
4.0
E
off
V
CE
= 480V
E
on
-
6.0
2.8
2.4
2.0
E
off
V
CE
= 480V
E
on
Fig. 13. Inductive Switching
Energy Loss vs. Collector Current
5.6
5.5
5.0
4.5
---
----
T
J
= 125ºC , V
GE
= 15V
R
G
= 2
Ω
,
V
GE
= 15V
4.8
4.0
3.2
2.4
E
off
- MilliJoules
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2
3
4
5
6
7
8
9
10
11
12
13
14
15
I
C
= 50A
I
C
E
on
- MilliJoules
= 100A
4.0
3.5
3.0
2.5
2.0
E
off
- MilliJoules
E
on
- MilliJoules
1.6
1.2
T
J
= 125ºC, 25ºC
0.8
0.4
1.6
0.8
0.0
100
1.5
1.0
0.0
20
30
40
50
60
70
80
90
R
G
- Ohms
I
C
- Amperes
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
3.5
3.0
2.5
E
off
V
CE
= 480V
E
on
5.6
190
180
170
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
500
----
4.8
4.0
t
f
V
CE
= 480V
t
d(off)
- - - -
450
400
R
G
= 2Ω
,
V
GE
= 15V
T
J
= 125ºC, V
GE
= 15V
t
d(off)
- Nanoseconds
t
f
- Nanoseconds
E
off
- MilliJoules
160
150
140
130
120
110
I
C
= 50A
350
300
I
C
= 100A
E
on
- MilliJoules
2.0
1.5
1.0
0.5
0.0
25
35
45
55
65
75
85
I
C
= 100A
3.2
2.4
1.6
250
200
150
100
50
0
I
C
= 50A
0.8
0.0
125
100
90
2
3
4
5
6
7
8
9
10
11
12
13
14
15
95
105
115
T
J
- Degrees Centigrade
R
G
- Ohms
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
180
160
140
150
160
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
125
t
f
V
CE
= 480V
t
d(off)
- - - -
R
G
= 2Ω , V
GE
= 15V
140
130
140
t
f
V
CE
= 480V
t
d(off)
- - - -
R
G
= 2Ω , V
GE
= 15V
115
t
d(off)
-
Nanoseconds
t
d(off)
- Nanoseconds
t
f
-
Nanoseconds
t
f
- Nanoseconds
120
100
80
60
T
J
= 125ºC
120
110
100
90
120
105
100
I
C
= 100A
80
I
C
= 50A
95
85
T
J
= 25ºC
40
20
20
30
40
50
60
70
80
90
80
70
100
60
75
40
25
35
45
55
65
75
85
95
105
115
65
125
I
C
- Amperes
T
J
- Degrees Centigrade
© 2009 IXYS CORPORATION, All Rights Reserved
51单片机
