Preliminary Technical Information
High-Gain IGBT
w/ Diode
High-Speed PT Trench IGBT
IXGP24N60C4D1
V
CES
I
C110
V
CE(sat)
t
fi(typ)
TO-220
=
=
≤
=
600V
24A
2.70V
44ns
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
F110
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GE
= 1MΩ
Continuous
Transient
T
C
T
C
T
C
T
C
= 25°C
= 110°C
= 110°C
= 25°C, 1ms
Maximum Ratings
600
600
±20
±30
56
24
30
130
I
CM
= 48
@
≤
V
CES
190
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
A
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
G
CE
Tab
G = Gate
E = Emitter
C = Collector
Tab = Collector
V
GE
= 15V, T
VJ
= 125°C, R
G
= 10Ω
Clamped Inductive Load
T
C
= 25°C
Features
Optimized for Low Switching Losses
Square RBSOA
Anti-Parallel Ultra Fast Diode
International Standard Package
Advantages
High Power Density
Low Gate Drive Requirement
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
300
260
1.13/10
3
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
= 250μA, V
CE
= V
GE
T
J
= 125°C
V
CE
= 0V, V
GE
=
±20V
I
C
= I
C110
, V
GE
= 15V, Note 1
T
J
= 125°C
V
CE
= V
CES
, V
GE
= 0V
Characteristic Values
Min.
Typ.
Max.
4.0
6.5
V
10
μA
1.5 mA
±100
2.10
1.95
2.70
nA
V
V
© 2011 IXYS CORPORATION, All Rights Reserved
DS100257A(04/11)
IXGP24N60C4D1
Symbol Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
10
17
875
62
28
64
I
C
=
I
C110
, V
GE
= 15V, V
CE
= 0.5
•
V
CES
7
28
Inductive Load, T
J
= 25°C
I
C
=
I
C110
, V
GE
= 15V
Note 2
V
CE
= 360V, R
G
= 10
Ω
22
43
0.35
192
44
0.34
20
32
0.37
148
115
0.52
0.21
S
pF
pF
pF
nC
nC
nC
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
0.65 °C/W
°C/W
TO-220 (IXGP) Outline
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCS
I
C
=
I
C110
, V
CE
= 10V, Note 1
V
CE
= 25V, V
GE
= 0V, f = 1MHz
Pins:
1 - Gate
3 - Emitter
2 - Collector
0.60
Inductive Load, T
J
= 125°C
I
C
=
I
C110
, V
GE
= 15V
Note 2
V
CE
= 360V, R
G
= 10
Ω
Reverse Diode (FRED)
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
V
F
I
RM
t
rr
t
rr
R
thJC
I
F
= 10A, V
GE
= 0V, Note 1
I
F
= 12A, V
GE
= 0V,
-di
F
/dt = 100A/μs, V
R
= 100V, T
J
= 125°C
I
F
= 1A, V
GE
= 0V, -di
F
/dt = 100A/μs, V
R
= 30V
2.5
110
30
Characteristic Values
Min.
Typ.
Max.
3.0
V
A
ns
ns
2.5 °C/W
Notes:
1. Pulse test, t
≤
300μs, duty cycle, d
≤
2%.
2. Switching times & energy losses may increase for higher V
CE
(clamp), T
J
or R
G
.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
