IXKH 30N60C5
CoolMOS
™ 1)
Power MOSFET
N-Channel Enhancement Mode
Low R
DSon
, High V
DSS
MOSFET
Ultra low gate charge
D
I
D25
=
30 A
V
DSS
= 600 V
R
DS(on) max
= 0.125
Ω
TO-247 AD
G
G
D
S
S
D(TAB)
MOSFET
Symbol
V
DSS
V
GS
I
D25
I
D90
E
AS
E
AR
dV/dt
Symbol
T
C
= 25°C
T
C
= 90°C
single pulse
repetitive
I
D
= 11 A; T
C
= 25°C
Conditions
T
VJ
= 25°C
Maximum Ratings
600
±
20
30
21
708
1.2
50
V
V
A
A
mJ
mJ
V/ns
Features
• fast CoolMOS
™ 1)
power MOSFET
4
th
generation
- High blocking capability
- Lowest resistance
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
due to reduced chip thickness
• Enhanced total power density
Applications
• Switched mode power supplies
(SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
• Inductive heating
• PDP and LCD adapter
MOSFET dV/dt ruggedness V
DS
= 0...480 V
Conditions
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ.
110
2.5
T
VJ
= 25°C
T
VJ
= 125°C
3
20
100
2500
120
53
12
18
15
5
50
5
0.4
70
max.
125
3.5
2
mΩ
V
µA
µA
nA
pF
pF
nC
nC
nC
ns
ns
ns
ns
K/W
R
DSon
V
GS(th)
I
DSS
I
GSS
C
iss
C
oss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
thJC
V
GS
= 10 V; I
D
= 16 A
V
DS
= V
GS
; I
D
= 1.1 mA
V
DS
= 600 V; V
GS
= 0 V
V
GS
=
±
20 V; V
DS
= 0 V
V
GS
= 0 V; V
DS
= 100 V
f = 1 MHz
V
GS
= 0 to 10 V; V
DS
= 400 V; I
D
= 16 A
1)
CoolMOS
™
is a trademark of
Infineon Technologies AG.
V
GS
= 10 V; V
DS
= 400 V
I
D
= 16 A; R
G
= 3.3
Ω
IXYS reserves the right to change limits, test conditions and dimensions.
20090209d
© 2009 IXYS All rights reserved
1-4
IXKH 30N60C5
Source-Drain Diode
Symbol
Conditions
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
I
S
V
SD
t
rr
Q
RM
I
RM
V
GS
= 0 V
I
F
= 16 A; V
GS
= 0 V
I
F
= 16 A; -di
F
/dt = 100 A/µs; V
R
= 400 V
0.9
430
9
42
typ.
max.
16
1.2
A
V
ns
µC
A
Component
Symbol
T
VJ
T
stg
M
d
Symbol
Conditions
operating
mounting torque
Conditions
Maximum Ratings
-55...+150
-55...+150
0.8 ... 1.2
°C
°C
Nm
Characteristic Values
min.
typ.
0.25
6
max.
K/W
g
R
thCH
Weight
with heatsink compound
IXYS reserves the right to change limits, test conditions and dimensions.
20090209d
© 2009 IXYS All rights reserved
2-4
IXKH 30N60C5
TO-247 AD Outline
Symbol
A
A1
A2
D
E
E2
e
L
L1
ØP
Q
S
b
b2
b4
c
D1
D2
E1
ØP1
Inches
min
max
0.185
0.209
0.087
0.102
0.059
0.098
0.819
0.845
0.610
0.640
0.170
0.216
0.215 BSC
0.780
0.800
-
0.177
0.140
0.144
0.212
0.244
0.242 BSC
0.039
0.055
0.065
0.094
0.102
0.135
0.015
0.035
0.515
-
0.020
0.053
0.530
-
-
0.291
Millimeters
min
max
4.70
5.30
2.21
2.59
1.50
2.49
20.79
21.45
15.48
16.24
4.31
5.48
5.46 BSC
19.80
20.30
-
4.49
3.55
3.65
5.38
6.19
6.14 BSC
0.99
1.40
1.65
2.39
2.59
3.43
0.38
0.89
13.07
-
0.51
1.35
13.45
-
-
7.39
350
120
50
T
J
= 125°C
300
105
T
J
= 25°C
20 V
V
GS
=
20 V
10 V 8 V
7V
V
GS
=
10 V
8V
40
90
250
6V
75
200
P
tot
[ W]
7V
5.5 V
30
60
6V
I
D
[A ]
I
D
[A ]
5V
150
45
100
5.5 V
20
30
4.5 V
5V
10
50
15
4.5 V
0
0
40
80
T
C
[°C]
120
160
0
0
5
10
15
20
0
0
5
10
15
20
V
DS
[V]
V
DS
[V]
Fig. 1 Power dissipation
Fig. 2 Typ. output characteristics
Fig. 3 Typ. output characteristics
IXYS reserves the right to change limits, test conditions and dimensions.
20090209d
© 2009 IXYS All rights reserved
3-4
IXKH 30N60C5
0.5
0.4
120
T
JV
= 150°C
5.5 V
6 V 6.5 V
7V
I
D
= 16 A
V
GS
= 10 V
V
DS
> 2·R
DS(on) max
· I
D
25 °C
0.4
20 V
0.3
80
V
DS
=
0.3
5V
[Ω]
[Ω]
DS (on)
DS (on)
0.2
I
D
[A ]
T
J
=
150 °C
R
0.2
R
98 %
typ
40
0.1
0.1
0
0
10
20
30
40
50
0
-60
-20
20
60
100
140
180
0
0
2
4
6
8
10
I
D
[A]
T
j
[°C]
V
GS
[V]
Fig. 4 Typ. drain-source on-state
resistance characteristics of IGBT
10
2
Fig. 5 Drain-source on-state resistance
Fig. 6 Typ. transfer characteristics
10
25 °C, 98%
10
5
9
150 °C, 98%
25 °C
I
D
= 16 A pulsed
V
GS
= 0 V
f = 1 MHz
10
4
8
0
V
DS
= 120 V
1 2 V
40 0V
10
1
T
J
=
150 °C
7
6
10
3
Ciss
I
F
[A ]
[V ]
Coss
V
GS
5
4
C [pF ]
10
2
Crss
10
0
3
2
1
10
1
10
-1
0
0
0.5
1
1.5
2
10
0
0
10
20
30
40
50
60
0
50
100
150
200
V
SD
[V]
Q
gate
[nC]
V
DS
[V]
Fig. 7 Forward characteristic
of reverse diode
800
Fig. 8
Typ. gate charge
Fig. 9 Typ. capacitances
700
10
0
I
D
= 11 A
I
D
= 0.25 mA
600
660
0.5
Z
th J C
[ K /W ]
[V ]
0.2
-1
[mJ ]
D = t
p
/T
B R (DS S )
400
620
E
AS
10
0.1
0.05
V
200
580
0.02
0.01
single pulse
0
20
60
100
140
180
540
-60
-20
20
60
100
140
180
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
T
j
[°C]
T
j
[°C]
t
p
[s]
Fig. 10 Avalanche energy
Fig. 11 Drain-source breakdown voltage
IXYS reserves the right to change limits, test conditions and dimensions.
Fig. 12 Max. transient thermal
impedance
20090209d
© 2009 IXYS All rights reserved
4-4
