High Voltage
IGBT with Diode
Combi Pack
Short Circuit SOA Capability
IXSK35N120AU1
V
CES
I
C25
V
CE(sat)
= 1200 V
=
70 A
=
4V
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
t
SC
(SCSOA)
P
C
T
J
T
JM
T
stg
T
L
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MW
Continuous
Transient
T
C
= 25°C
T
C
= 90°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
J
= 125°C, R
G
= 22
W
Clamped inductive load, L = 30
mH
V
GE
= 15 V, V
CE
= 720 V, T
J
= 125°C
R
G
= 22
W,
non repetitive
T
C
= 25°C
IGBT
Diode
Maximum Ratings
1200
1200
±20
±30
70
35
140
I
CM
= 70
@ 0.8 V
CES
10
300
190
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
ms
W
W
°C
°C
°C
°C
Nm/lb.in.
g
TO-264 AA
C (TAB)
G
C
E
C = Collector,
TAB = Collector
G = Gate,
E = Emitter,
Features
• International standard package
JEDEC TO-264 AA
• High frequency IGBT and anti-parallel
FRED in one package
• 2nd generation HDMOS
TM
process
• Low V
CE(sat)
- for minimum on-state conduction
losses
• MOS Gate turn-on
- drive simplicity
• Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low I
RM
Applications
1.6 mm (0.063 in) from case for 10 s
Mounting torque
300
1.15/13
10
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
1200
4
T
J
= 25°C
T
J
= 125°C
8
750
15
±100
4
V
V
mA
mA
nA
V
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 5 mA, V
GE
= 0 V
= 4 mA, V
CE
= V
GE
•
•
•
•
•
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
V
CE
= 0.8 • V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
±20
V
I
C
= I
C90
, V
GE
= 15 V
Advantages
• Space savings (two devices in one
package)
• Easy to mount with one screw
(isolated mounting screw hole)
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
94526F(7/00)
© 2000 IXYS All rights reserved
1-2
IXSK35N120AU1
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
20
26
S
TO-264 AA Outline
g
fs
I
C
= I
C90
; V
CE
= 10 V,
Pulse test, t
£
300
ms,
duty cycle
£
2 %
I
C(on)
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
V
GE
= 15 V, V
CE
= 10 V
170
3900
295
60
150
40
70
Inductive load, T
J
= 25°C
I
C
= I
C90
, V
GE
= 15 V,
L = 100
mH,
V
CE
= 0.8 V
CES
, R
G
= 2.7
W
Note 1
Inductive load, T
J
= 125°C
I
C
= I
C90
, V
GE
= 15 V,
L = 100
mH
V
CE
= 0.8 V
CES
, R
G
= 2.7
W
Note 1
80
150
400
500
10
80
150
8
400
700
15
900
700
190
60
100
A
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
0.42 K/W
0.15
K/W
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min.
Max.
4.82
2.54
2.00
1.12
2.39
2.90
0.53
25.91
19.81
5.46
0.00
0.00
20.32
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
5.13
2.89
2.10
1.42
2.69
3.09
0.83
26.16
19.96
BSC
0.25
0.25
20.83
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
Inches
Min.
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
t
d(on)
t
ri
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCK
Reverse Diode (FRED)
Symbol
V
F
I
RM
t
rr
R
thJC
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
2.35
32
225
40
36
60
V
A
ns
ns
I
F
= I
C90
, V
GE
= 0 V, Pulse test,
t
£
300
ms,
duty cycle d
£
2 %, T
J
= 125°C
I
F
= I
C90
, V
GE
= 0 V, -di
F
/dt = 480 A/ms
V
R
= 540 V
T
J
= 100°C
I
F
= 1 A; -di/dt = 200 A/ms; V
R
= 30 V T
J
= 25°C
0.65 K/W
IXSK 35N120AU1 characteristic curves are located in the IXSH 35N120A data
sheet, Publication No. D96001DE, pages 66 - 67.
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
2-2
DIY/开源硬件专区
