Polar
TM
Power MOSFET
IXTY1N100P
IXTA1N100P
IXTP1N100P
V
DSS
I
D25
R
DS(on)
= 1000V
= 1A
15
N-Channel Enhancement Mode
Avalanche Rated
TO-252 (IXTY)
G
S
D (Tab)
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
F
C
M
d
Weight
Test Conditions
T
J
= 25C to 150C
T
J
= 25C to 150C, R
GS
= 1M
Continuous
Transient
T
C
= 25C
T
C
= 25C, Pulse Width Limited by T
JM
T
C
= 25C
T
C
= 25C
I
S
I
DM
, V
DD
V
DSS
, T
J
150°C
T
C
= 25C
Maximum Ratings
1000
1000
20
30
1.0
1.8
1.0
100
10
50
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
V/ns
W
C
C
C
°C
°C
N/lb
Nm/lb.in
g
g
g
TO-263 (IXTA)
G
S
D (Tab)
TO-220 (IXTP)
GD
S
D (Tab)
G = Gate
S = Source
D
= Drain
Tab = Drain
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Force (TO-263)
Mounting Torque (TO-220)
TO-252
TO-263
TO-220
300
260
Features
10..65 / 2.2..14.6
1.13 / 10
0.35
2.50
3.00
International Standard Packages
Low Q
G
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
Advantages
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 250μA
V
DS
= V
GS
, I
D
= 50μA
V
GS
=
20V,
V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 125C
Characteristic Values
Min.
Typ.
Max.
1000
2.5
4.5
V
V
High Power Density
Easy to Mount
Space Savings
Applications
DC-DC Converters
Switch-Mode and Resonant-Mode
Power Supplies
AC and DC Motor Drives
Lasers Drivers
Robotics and Servo Controls
50
nA
5
A
100
A
12.2
15.0
V
GS
= 10V, I
D
= 0.5
•
I
D25
, Note 1
© 2017 IXYS CORPORATION, All Rights Reserved
DS99234H(8/17)
IXTY1N100P
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
Q
g(on)
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
thJC
R
thCS
TO-220
0.50
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 50 (External)
V
GS
= 10V, V
DS
= 0.5
•
V
DSS
, I
D
= 0.5
•
I
D25
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 30V, I
D
= 0.5 • I
D25
, Note 1
Characteristic Values
Min.
Typ.
Max
0.45
0.78
331
24
5.5
15.5
4.1
8.0
20
26
55
24
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
2.5
C/W
C/W
IXTA1N100P
IXTP1N100P
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= I
S
, V
GS
= 0V, Note 1
I
F
= 1A, -di/dt = 100A/μs, V
R
= 100V
750
Characteristic Values
Min.
Typ.
Max
1.0
3.0
1.5
A
A
V
ns
Note 1. Pulse test, t
300s, duty cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
7,005,734B2
6,759,692
7,063,975B2
6,771,478B2 7,071,537
7,157,338B2
IXTY1N100P
IXTA1N100P
IXTP1N100P
o
1.0
0.9
0.8
0.7
Fig. 1. Output Characteristics @ T
J
= 25 C
V
GS
= 10V
7V
o
1.8
1.6
1.4
Fig. 2. Extended Output Characteristics @ T
J
= 25 C
V
GS
= 10V
8V
7V
I
D
- Amperes
0.6
0.5
0.4
0.3
0.2
6V
I
D
- Amperes
1.2
1.0
6V
0.8
0.6
0.4
5V
0.1
0.0
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
5V
0.2
0.0
0
5
10
15
20
25
30
V
DS
- Volts
o
V
DS
- Volts
Fig. 3. Output Characteristics @ T
J
= 125 C
1
0.9
0.8
0.7
V
GS
= 10V
7V
3.0
2.6
Fig. 4. R
DS(on)
Normalized to I
D
= 0.5A Value vs.
Junction Temperature
V
GS
= 10V
R
DS(on)
- Normalized
2.2
I
D
= 1.0A
1.8
I
D
= 0.5A
1.4
1.0
0.6
0.2
I
D
- Amperes
0.6
0.5
0.4
0.3
0.2
0.1
0
0
5
10
15
20
6V
5V
25
30
-50
-25
0
25
50
75
100
125
150
V
DS
- Volts
T
J
- Degrees Centigrade
2.6
2.4
2.2
Fig. 5. R
DS(on)
Normalized to I
D
= 0.5A Value vs.
Drain Current
V
GS
= 10V
T
J
= 125 C
o
Fig. 6. Maximum Drain Current vs. Case Temperature
1.1
1.0
0.9
0.8
R
DS(on)
- Normalized
1.8
1.6
1.4
1.2
1.0
0.8
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
o
I
D
- Amperes
T
J
= 25 C
2.0
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
-50
-25
0
25
50
75
100
125
150
I
D
- Amperes
T
C
- Degrees Centigrade
© 2017 IXYS CORPORATION, All Rights Reserved
IXTY1N100P
IXTA1N100P
IXTP1N100P
Fig. 7. Input Admittance
1.0
0.9
0.8
1.4
1.2
1.0
Fig. 8. Transconductance
o
T
J
= - 40 C
g
f s
- Siemens
0.7
I
D
- Amperes
0.6
0.5
0.4
0.3
0.2
0.1
0.0
3.0
3.5
4.0
4.5
T
J
= 125 C
25 C
o
- 40 C
o
o
25 C
0.8
125 C
0.6
0.4
0.2
0.0
o
o
5.0
5.5
6.0
6.5
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
3.0
10
9
2.5
8
7
V
DS
= 500V
I
D
= 0.5A
I
G
= 10mA
Fig. 10. Gate Charge
2.0
I
S
- Amperes
V
GS
- Volts
T
J
= 125 C
T
J
= 25 C
o
o
6
5
4
3
2
1
1.5
1.0
0.5
0.0
0.4
0.45
0.5
0.55
0.6
0.65
0.7
0.75
0.8
0.85
0.9
0
0
2
4
6
8
10
12
14
16
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
1,000
10
Fig. 12. Maximum Transient Thermal Impedance
Capacitance - PicoFarads
Ciss
100
Coss
Z
(th)JC
- K / W
30
35
40
1
10
f
= 1 MHz
1
0
5
10
15
20
25
Crss
0.1
0.0001
0.001
0.01
0.1
1
10
V
DS
- Volts
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTY1N100P
TO-252 AA Outline
A
E
b3
4
A
L3
c2
IXTA1N100P
IXTP1N100P
oP
A
A1
TO-263 Outline
E
C2
L1
A1
D
H
1
2
3
L2
A
TO-220 Outline
E1
E
D1
A1
H
4
Q
D
H1
D2
L4
1
2
3
L1
A2
L
L2
c
e
e1
e1
OPTIONAL
b2
0
5.55MIN
1 - Gate
2,4 - Drain
3 - Source
b2
b
L3
c
0
e
0.43 [11.0]
e
D1
E1
0.34 [8.7]
EJECTOR
PIN
A2
L1
L
6.50MIN
4
6.40
2.85MIN
BOTTOM
VIEW
2.28
1.25MIN
LAND PATTERN RECOMMENDATION
A2
0.66 [16.6]
1 - Gate
2,4 - Drain
3 - Source
0.20 [5.0]
0.12 [3.0]
0.10 [2.5]
0.06 [1.6]
e
e1
c
3X b
3X b2
1 - Gate
2,4 - Drain
3 - Source
© 2017 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_1N100P(1C) 4-03-08
