型号
- 型号
- 关键词
Power Field-Effect Transistor, 1.4A I(D), 1200V, 13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
厂商名称：Littelfuse
厂商官网：http://www.littelfuse.com
器件标准：
| 型号 | IXTA1R4N120P | IXTY1R4N120P | IXTY1R4N120PHV | IXTP1R4N120P |
|---|---|---|---|---|
| 描述 | Power Field-Effect Transistor, 1.4A I(D), 1200V, 13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, | Power Field-Effect Transistor, 1.4A I(D), 1200V, 13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN |
| 厂商名称 | Littelfuse | Littelfuse | Littelfuse | Littelfuse |
| Reach Compliance Code | not_compliant | compliant | compliant | compliant |
| 配置 | SINGLE WITH BUILT-IN DIODE | Single | - | SINGLE WITH BUILT-IN DIODE |
| 最大漏极电流 (Abs) (ID) | 1.4 A | 1.4 A | - | 1.4 A |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR |
| 最高工作温度 | 150 °C | 150 °C | - | 150 °C |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | - | N-CHANNEL |
| 最大功率耗散 (Abs) | 86 W | 86 W | - | 86 W |
| 表面贴装 | YES | YES | - | NO |
模拟电子
实时操作系统RTOS
电源技术
模拟与混合信号
MEMS传感器
测试/测量
