PolarHV
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA 6N50P
IXTP 6N50P
V
DSS
= 500 V
I
D25
=
6 A
R
DS(on)
≤
1.1
Ω
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Test Conditions
T
J
= 25° C to 150° C
T
J
= 25° C to 150° C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25° C
T
C
= 25° C, pulse width limited by T
JM
T
C
= 25° C
T
C
= 25° C
T
C
= 25° C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
,
T
J
≤
150° C, R
G
= 18
Ω
T
C
= 25° C
Maximum Ratings
500
500
±
30
±
40
6
15
6
20
250
10
100
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
mJ
V/ns
W
°C
°C
°C
°C
°C
TO-263 (IXTA)
G
S
(TAB)
TO-220 (IXTP)
G
D S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
TO-220
TO-263
(TO-220)
300
260
1.13/10 Nm/lb.in.
4
3
g
g
Features
l
l
l
Symbol
Test Conditions
(T
J
= 25° C, unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
µA
V
DS
= V
GS
, I
D
= 50µA
V
GS
=
±30
V, V
DS
= 0V
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 125° C
Characteristic Values
Min. Typ.
Max.
500
3.0
5.0
±100
5
50
1.1
V
V
nA
µA
µA
Ω
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
l
l
l
Easy to mount
Space savings
High power density
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
© 2006 IXYS All rights reserved
DS99447E(04/06)
IXTA 6N50P
IXTP 6N50P
Symbol
Test Conditions
Characteristic Values
(T
J
= 25° C, unless otherwise specified)
Min.
Typ.
Max.
3.5
5.5
740
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
85
8
26
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
G
= 18
Ω
(External)
28
65
26
14.6
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
4.8
5.6
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.25° C/W
(TO-220)
0.25
°
C/W
TO-263 (IXTA) Outline
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
V
DS
= 20 V; I
D
= 0.5 I
D25
, pulse test
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Test Conditions
V
GS
= 0 V
Repetitive
Characteristic Values
(T
J
= 25° C unless otherwise specified)
Min.
Typ.
Max.
6
18
1.5
400
A
A
V
ns
TO-220 (IXTP) Outline
I
F
= I
S
, V
GS
= 0 V, -di/dt = 100 A/µs
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
IXTA 6N50P
IXTP 6N50P
Fig. 1. Output Characte ris tics
@ 25
º
C
6
V
GS =
10V
5
7V
12
10
14
V
GS
= 10V
8V
Fig. 2. Exte nde d Output Characte ris tics
@ 25
º
C
I
D
- Amperes
4
7V
I
D
- Amperes
8
6
6V
4
2
5V
0
0
3
6
9
12
3
2
6V
1
0
0
1
2
3
4
5V
5
6
7
V
D S
- V olts
Fig. 3. Output Characte ris tics
@ 125
º
C
6
V
GS
= 10V
5
4
6V
3
2
5V
1
0
0
2
4
6
8
10
12
14
7V
2.6
2.4
2.2
V
D S
- V olts
15
18
21
24
27
30
Fig. 4. R
DS(on
)
Norm alize d to 0.5 I
D25
V alue vs . Junction Te m pe ratur e
V
GS
= 10V
R
D S ( o n )
- Normalized
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
-25
0
25
50
75
100
125
150
I
D
= 3A
I
D
= 6A
I
D
- Amperes
V
D S
- V olts
Fig. 5. R
DS(on)
Nor m alize d to
3
2.8
2.6
T
J
- Degrees Centigrade
Fig. 6. Dr ain Curr e nt vs . Cas e
Te m pe r ature
7
6
5
0.5 I
D25
V alue vs . I
D
V
GS
= 10V
T
J
= 125
º
C
R
D S ( o n )
- Normalized
2.4
I
D
- Amperes
T
J
= 25
º
C
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0
2
4
6
8
10
12
14
4
3
2
1
0
-50
-25
0
25
50
75
100
125
150
I
D
- A mperes
T
C
- Degrees Centigrade
© 2006 IXYS All rights reserved
IXTA 6N50P
IXTP 6N50P
Fig. 7. Input Adm ittance
8
7
6
10
9
8
T
J
= -40
º
C
25
º
C
125
º
C
Fig. 8. Tr ans conductance
I
D
- Amperes
5
4
3
2
1
0
4
4.5
5
5.5
6
6.5
T
J
= 125
º
C
25
º
C
-40
º
C
- Siemens
7
6
5
4
3
2
1
0
0
g
fs
1
2
3
4
5
6
7
8
V
G S
- V olts
Fig. 9. Source Cur r e nt vs .
Sour ce -To-Dr ain V oltage
18
16
14
10
9
8
7
V
DS
= 250V
I
D
= 3A
I
G
= 10m A
I
D
- A mperes
Fig. 10. Gate Char ge
I
S
- Amperes
12
V
G S
- Volts
T
J
= 25
º
C
0.8
0.9
1
10
8
6
4
2
0
0.4
0.5
0.6
0.7
T
J
= 125
º
C
6
5
4
3
2
1
0
0
2
4
6
8
10
12
14
16
V
S D
- V olts
Fig. 11. Capacitance
10000
f = 1MH z
100
Q
G
- nanoCoulombs
Fig. 12. For w ar d-Bias
Safe Ope r ating Ar e a
T
J
= 1
º
C
50
R
DS(on)
Lim it
C iss
T
C
= 25
º
C
Capacitance - picoFarads
1000
I
D
- Amperes
10
25µs
1
00µs
1 s
m
DC
1 s
0m
100
C oss
10
C rss
1
0
5
10
15
20
25
30
35
40
1
0.1
10
100
1000
V
D S
- V olts
IXYS reserves the right to change limits, test conditions, and dimensions.
V
D S
- V olts
IXTA 6N50P
IXTP 6N50P
Fig. 13. Maxim um Transient Therm al Resistance
10.00
R
( t h ) J C
-
º
C / W
1.00
0.10
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - milliseconds
© 2006 IXYS All rights reserved
DigiKey得捷技术专区
