Preliminary Technical Information
PolarHT
TM
Power
MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
IXTC 62N15P
IXTR 62N15P
V
DSS
I
D25
R
DS(on)
= 150
V
= 36
A
45 m
Ω
≤
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
F
C
Weight
Test Conditions
T
J
= 25° C to 150° C
T
J
= 25° C to 150° C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25° C
T
C
= 25° C, pulse width limited by T
JM
T
C
= 25° C
T
C
= 25° C
T
C
= 25° C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
,
T
J
≤
150° C, R
G
= 10
Ω
T
C
= 25° C
Maximum Ratings
150
150
±
20
±
30
36
150
50
30
1.0
10
150
-55 ... +175
150
-55 ... +150
V
V
V
V
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
N/lb
N/lb
g
g
ISOPLUS220 (IXTC)
E153432
G
D
S
Isolated back
surface
ISOPLUS247 (IXTR)
E153432
G
D
S
Isolated back
surface
D = Drain
TAB = Drain
G = Gate
S = Source
1.6 mm (0.062 in.) from case for 10 s
Mounting force
ISOPLUS220
ISOPLUS247
ISOPLUS220
ISOPLUS247
300
11..65 / 2.5..15
20..120 / 4.5..25
3
5
Features
l
International standard isolated
packages
l
UL recognized packages
l
Symbol
Test Conditions
(T
J
= 25° C unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
µA
V
DS
= V
GS
, I
D
= 250
µA
V
GS
=
±
20 V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 31 A, Note 1
T
J
= 125° C
Characteristic Values
Min. Typ.
Max.
150
3.0
5.0
±
100
10
200
45
V
l
l
V
nA
µA
µA
m
Ω
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic diode
Advantages
l
Easy to mount
l
Space savings
l
High power density
DS99622E(05/06)
© 2006 IXYS All rights reserved
IXTC 62N15P
IXTR 62N15P
Symbol
Test Conditions
Characteristic Values
(T
J
= 25° C unless otherwise specified)
Min. Typ.
Max.
14
24
2250
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
660
185
27
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 62 A
R
G
= 10
Ω
(External)
38
76
35
70
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 31 A
20
38
1.0
0.15
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
°
C/W
°
C/W
Note:
Bottom heatsink (Pin 4) is
electrically isolated from Pin
1,2, or 3.
ISOPLUS220
TM
(IXTC) Outline
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
V
DS
= 20 V; I
D
= 31 A, Note 1
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Q
RM
Test Conditions
V
GS
= 0 V
Repetitive
I
F
= I
S
, V
GS
= 0 V, Note 1
I
F
= 25 A, -di/dt = 100 A/µs
V
R
= 100 V, V
GS
= 0 V
Characteristic Values
T
J
= 25° C unless otherwise specified)
Min. Typ.
Max.
62
150
1.5
150
2.0
A
A
V
ns
µC
Ref: IXYS CO 0177 R0
ISOPLUS247 (IXTR) Outline
Note 1:
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %;
2: Test current I I
T
= 62 A.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478 B2
7,005,734B2
