Advance Technical Information
High Voltage
Power MOSFET
IXTT3N200P3HV
IXTH3N200P3HV
V
DSS
I
D25
R
DS(on)
= 2000V
= 3A
8
N-Channel Enhancement Mode
TO-268HV (IXTT)
G
S
D
(Tab)
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
D110
I
DM
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Test Conditions
T
J
= 25C to 150C
T
J
= 25C to 150C, R
GS
= 1M
Continuous
Transient
T
C
= 25C
T
C
= 110C
T
C
= 25C, Pulse Width Limited by T
JM
T
C
= 25C
Maximum Ratings
2000
2000
20
30
3.0
2.6
9.0
520
- 55 ... +150
150
- 55 ... +150
V
V
V
V
A
A
A
W
C
C
C
°C
°C
Nm/lb.in
g
g
TO-247HV (IXTH)
G
S
D
G = Gate
S = Source
D (Tab)
D
= Drain
Tab = Drain
Maximum Lead Temperature for Soldering
Plastic Body for 10s
Mounting Torque
TO-268HV
TO-247HV
300
260
1.13/10
4
6
Features
High Blocking Voltage
High Voltage Packages
Advantages
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 250A
V
DS
= V
GS
, I
D
= 250A
V
GS
=
20V,
V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
V
GS
= 10V, I
D
= 1.5A, Note 1
T
J
= 125C
Characteristic Values
Min.
Typ. Max.
2000
3.0
5.0
V
V
Easy to Mount
Space Savings
High Power Density
Applications
100
nA
10
A
250
μA
8
High Voltage Power Supplies
Capacitor Discharge Applications
Pulse Circuits
Laser and X-Ray Generation Systems
© 2015 IXYS CORPORATION, All Rights Reserved
DS100687(8/15)
IXTT3N200P3HV
IXTH3N200P3HV
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
R
Gi
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
TO-247HV
0.21
V
GS
= 10V, V
DS
= 1kV, I
D
= 0.5 • I
D25
Gate Input Resistance
Resistive Switching Times
V
GS
= 10V, V
DS
= 500V, I
D
= 0.5 • I
D25
R
G
= 5 (External)
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 50V, I
D
= 1.5A, Note 1
Characteristic Values
Min.
Typ.
Max.
2.3
3.8
1860
133
58
3.8
21
27
67
60
70
8
39
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.24 °C/W
°C/W
1
e
3
D
2
L4
e
H
3
D2
2
C
1
D3
D1
A1
TO-268HV Outline
E
L2
A
C2
E1
b
PINS:
1 - Gate 2 - Source
3 - Drain
L3
A2
L
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
Note:
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= I
S
, V
GS
= 0V, Note 1
I
F
= 1.5A, -di/dt = 100A/s
V
R
= 100V, V
GS
= 0V
420
380
1.8
Characteristic Values
Min.
Typ.
Max.
3
12
1.5
A
A
V
ns
nC
A
e
1 2
D3
3
L1
A3
2X
A1
E2
E3
4X
TO-247HV Outline
R
E
0P
Q S
D1
4
D2
A2
A
0P1
E1
D
L
1. Pulse test, t
300s, duty cycle, d
2%.
e1
c
b
PINS:
1 - Gate 2 - Source
3, 4 - Drain
3X
3X
b1
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or moreof the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTT3N200P3HV
IXTH3N200P3HV
Fig. 1. Output Characteristics @ T
J
= 25ºC
4.5
V
GS
= 10V
4.0
7V
3.5
3.0
2.0
2.5
3.0
V
GS
= 10V
6V
Fig. 2. Output Characteristics @ T
J
= 125ºC
I
D
- Amperes
2.5
2.0
1.5
1.0
6V
I
D
- Amperes
1.5
1.0
5V
0.5
0.5
5V
0.0
0
10
20
30
40
50
60
0.0
0
10
20
30
40
50
60
70
4V
V
DS
- Volts
V
DS
- Volts
Fig. 3. R
DS(on)
Normalized to I
D
= 1.5A Value vs.
Junction Temperature
3.4
3.0
2.6
V
GS
= 10V
Fig. 4. R
DS(on)
Normalized to I
D
= 1.5A Value vs.
Drain Current
2.8
2.6
2.4
V
GS
= 10V
T
J
= 125ºC
R
DS(on)
- Normalized
R
DS(on)
- Normalized
I
D
= 3.0A
2.2
1.8
1.4
1.0
I
D
= 1.5A
2.2
2.0
1.8
1.6
1.4
1.2
T
J
= 25ºC
0.6
0.2
-50
-25
0
25
50
75
100
125
150
1.0
0.8
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
T
J
- Degrees Centigrade
I
D
- Amperes
3.5
Fig. 5. Maximum Drain Current vs.
Case Temperature
Fig. 6. Input Admittance
4.0
3.5
3.0
3.0
2.5
I
D
- Amperes
2.0
I
D
- Amperes
2.5
T
J
= 125ºC
2.0
25ºC
1.5
1.0
0.5
0.0
-40ºC
1.5
1.0
0.5
0.0
-50
-25
0
25
50
75
100
125
150
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
T
C
- Degrees Centigrade
V
GS
- Volts
© 2015 IXYS CORPORATION, All Rights Reserved
IXTT3N200P3HV
IXTH3N200P3HV
Fig. 7. Transconductance
8
7
6
T
J
= - 40ºC
9
8
7
6
Fig. 8. Forward Voltage Drop of Intrinsic Diode
g
f s
- Siemens
I
S
- Amperes
5
4
3
2
1
0
0
0.5
1
1.5
2
2.5
25ºC
125ºC
5
4
T
J
= 125ºC
3
T
J
= 25ºC
2
1
0
3
3.5
4
0.3
0.4
0.5
0.6
0.7
0.8
0.9
I
D
- Amperes
V
SD
- Volts
Fig. 9. Gate Charge
10
V
DS
= 1kV
I
G
= 10mA
10,000
Fig. 10. Capacitance
f
= 1 MHz
Capacitance - PicoFarads
8
I
D
= 1.5A
1,000
Ciss
V
GS
- Volts
6
Coss
100
4
2
Crss
0
0
10
20
30
40
50
60
70
10
0
Fig. 12. Maximum Transient Thermal Impedance
5
10
15
20
25
30
35
V
DS
- Volts
40
Q
G
- NanoCoulombs
1
Fig. 11. Forward-Bias Safe Operating Area
10
25µs
100µs
Fig. 12 Maximum Transient Thermal Impedance
0.4
aaaa
1
R
DS(
on
)
Limit
Z
(th)JC
- ºC / W
10,000
1ms
I
D
- Amperes
0.1
10ms
0.1
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
DC
100ms
0.01
100
1,000
0.01
0.0001
0.001
0.01
0.1
1
10
V
DS
- Volts
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_3N200P3HV (H7-AT653) 8-20-15
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
www.littelfuse.com/disclaimer-electronics.
