Advance Technical Information
High Current
MegaMOS
TM
FET
N-Channel Enhancement Mode
IXTK 110N30
V
DSS
I
D25
R
DS(on)
= 300 V
= 110 A
Ω
= 26 mΩ
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
D(RMS)
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
Test conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1.0 MΩ
Continuous
Transient
T
C
= 25°C MOSFET chip capability
External lead current limit
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
T
J
≤
150°C, R
G
= 2
Ω
T
C
= 25°C
Maximum ratings
300
300
±20
±30
110
75
440
90
80
4.0
5
730
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
mJ
J
V/ns
W
°
C
°
C
°
C
°
C
Nm/lb.in.
g
G
D
S
TO-264 AA (IXTK)
D (TAB)
G = Gate
S = Source
D
= Drain
Tab = Drain
Features
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
TO-264
300
0.7/6
10
•
Low R
DS (on)
HDMOS
TM
process
•
Rugged polysilicon gate cell structure
•
International standard package
•
Fast switching times
Applications
Symbol Test Conditions
(T
J
= 25°C unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250
µA
V
GS
= ±20 V DC, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 25°C
T
J
= 125°C
Characteristic Values
Min. Typ.
Max.
300
2.0
4.0
±200
V
V
nA
•
Motor controls
•
DC choppers
•
Switched-mode power supplies
Advantages
•
Easy to mount with one screw
(isolated mounting screw hole)
•
Space savings
•
High power density
50
µA
3 mA
26 mΩ
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
≤
300 ms, duty cycle d
≤
2%
© 2003 IXYS All rights reserved
DS99013(03/03)
IXTK 110N30
Symbol
Test Conditions
(T
J
= 25°C unless otherwise specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCK
0.15
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
G
= 1.0
Ω
(External)
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
Characteristic values
Min. Typ.
Max.
85
101
7800
1700
600
30
40
110
30
390
60
180
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.17 K/W
K/W
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min.
Max.
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91
26.16
19.81
19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32
20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
Min.
Inches
Max.
TO-264 AA Outline
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Test Conditions
V
GS
= 0V
Ratings and Characteristics
(T
J
= 25°C unless otherwise specified)
Min.
Typ.
Max.
110
440
1.5
A
A
V
Repetitive; pulse width limited by T
JM
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
≤
300 µs, duty cycle d
≤
2 %
I
F
= 25A, -di/dt = 100 A/µs, V
R
= 100V
350
4
ns
µC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
IXTK 110N30
Fig. 1. Output Characteristics
@ 25 Deg. C
1
50
1
25
V
GS
= 10V
9V
8V
7V
1
20
1
00
V
GS
= 10V
9V
8V
7V
6V
5V
Fig. 2. Output Characteristics
@ 125 Deg. C
I
D
- Amperes
I
D
- Amperes
1
00
75
50
25
0
0
6V
80
60
40
20
0
5V
1
V
DS
- Volts
2
3
4
5
0
1
.5
3
4.5
6
7.5
9
V
DS
- Volts
Fig. 3. R
DS(on)
Normalized to I
D25
Value vs.
Junction Temperature
3
V
GS
= 10V
3
2.6
Fig. 4. R
DS(on)
Normalized to I
D25
Value vs. I
D
V
GS
= 10V
T
J
= 125ºC
R
- Normalized
DS(on)
R
- Normalized
DS(on)
2.5
2.2
1
.8
1
.4
1
0.6
2
I
D
= 110A
1
.5
I
D
= 55A
1
T
J
= 25ºC
0.5
-50
-25
0
25
50
75
1
00
1
25
1
50
0
30
60
90
1
20
1
50
1
80
21
0
T
J
- Degrees Centigrade
I
D
- Amperes
Fig. 5. Drain Current vs. Case
T emperature
1
20
1
00
1
75
1
50
Fig. 6. Input Admittance
I
D
- Amperes
I
D
- Amperes
80
60
40
20
0
-50
-25
0
25
50
75
1
00
1
25
1
50
1
25
1
00
75
50
25
0
3.5
4
4.5
5
5.5
6
6.5
T
J
= -40ºC
25ºC
125ºC
T
C
- Degrees Centigrade
V
GS
- Volts
© 2003 IXYS All rights reserved
IXTK 110N30
Fig. 7. T ransconductance
1
80
1
60
1
40
T
J
= -40ºC
25ºC
125ºC
200
1
75
1
50
Fig. 8. Source Current vs. Source-To-Drain
Voltage
G
fs
- Siemens
I
S
- Amperes
1
20
1
00
80
60
40
20
0
0
30
60
90
1
20
1
50
1
80
21
0
1
25
1
00
75
50
25
0
0.4
0.5
0.6
0.7
0.8
0.9
1
1
.1
1
.2
T
J
= 125ºC
T
J
= 25ºC
I
D
- Amperes
V
SD
- Volts
Fig. 9. Gate Charge
1
0
V
DS
= 150V
I
D
= 60A
I
G
= 10mA
1
0000
Fig. 10. Capacitance
C
iss
6
Capacitance - pF
8
f = 1M Hz
V
GS
- Volts
1
000
C
oss
4
C
rss
2
0
0
80
1
60
240
320
400
1
00
0
5
1
0
1
5
Q
G
- nanoCoulombs
V
DS
- Volts
20
25
30
35
40
1
Fig. 11. Maximum Transient Thermal
Resistance
R
- (ºC/W)
(th)JC
0.1
0.01
1
Pulse Width - milliseconds
1
0
1
00
1
000
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
