PolarP
TM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTR90P20P
V
DSS
I
D25
R
DS(on)
=
=
- 200V
- 53A
48m
ISOPLUS247
E153432
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
V
ISOL
M
d
Weight
Test Conditions
T
J
= 25C to 150C
T
J
= 25C to 150C, R
GS
= 1M
Continuous
Transient
T
C
= 25C
T
C
= 25C, Pulse Width Limited by T
JM
T
C
= 25C
T
C
= 25C
I
S
I
DM
, V
DD
V
DSS
, T
J
150C
T
C
= 25C
Maximum Ratings
- 200
- 200
20
30
- 53
- 270
- 90
3.5
10
312
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
J
V/ns
W
C
C
C
°C
°C
V~
N/lb
g
Features
G
D
S
D
Isolated
Tab
G = Gate
S = Source
= Drain
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
50/60 H
Z
, RMS t = 1min
Mounting Force
300
260
2500
20..120/4.5..27
6
Silicon chip on Direct-Copper Bond
(DCB) Substrate
- UL Recognized Package
- Isolated Mounting Surface
- 2500V~ Electrical Isolation
Avalanche Rated
Fast Intrinsic Diode
The Rugged PolarP
TM
Process
Low Q
G
Low Drain-to-Tab Capacitance
Low Package Inductance
Advantages
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= - 250A
V
DS
= V
GS
, I
D
= -1mA
V
GS
=
20V,
V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
V
GS
= -10V, I
D
= - 45A, Note 1
T
J
= 125C
Characteristic Values
Min.
Typ.
Max.
- 200
- 2.0
- 4.5
V
V
Easy to Mount
Space Savings
High Power Density
Applications
100
nA
- 50
A
- 250
A
48 m
High-Side Switches
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
© 2016 IXYS CORPORATION, All Rights Reserved
DS99932D(6/16)
IXTR90P20P
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
0.15
V
GS
= -10V, V
DS
= 0.5 • V
DSS
, I
D
= - 45A
Resistive Switching Times
V
GS
= -10V, V
DS
= 0.5 • V
DSS
, I
D
= - 45A
R
G
= 1 (External)
V
GS
= 0V, V
DS
= - 25V, f = 1MHz
V
DS
= -10V, I
D
= - 45A, Note 1
Characteristic Values
Min.
Typ.
Max.
30
51
12
2210
250
32
60
89
28
205
45
80
S
nF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.40C/W
C/W
1 = Gate
2,4 = Drain
3 = Source
ISOPLUS247 (IXTR) Outline
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= - 45A, V
GS
= 0V, Note 1
I
F
= - 45A, -di/dt = -150A/s
V
R
= -100V, V
GS
= 0V
315
6.6
- 42
Characteristic Values
Min.
Typ.
Max.
- 90
- 360
- 3.2
A
A
V
ns
C
A
Note
1: Pulse test, t
300s, duty cycle, d
2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTR90P20P
Fig. 1. Output Characteristics @ T
J
= 25ºC
-90
-80
-70
- 7V
-60
-160
- 8V
V
GS
= -10V
- 9V
- 8V
-240
V
GS
= -10V
- 9V
-200
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
I
D
- Amperes
-50
-40
-30
-20
-10
0
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
- 5V
- 6V
I
D
- Amperes
-120
- 7V
-80
- 6V
-40
- 5V
0
0
-5
-10
-15
-20
-25
-30
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics @ T
J
= 125ºC
-90
-80
-70
V
GS
= -10V
- 9V
- 8V
2.4
Fig. 4. R
DS(on)
Normalized to I
D
= - 45A Value vs.
Junction Temperature
V
GS
= -10V
2.0
R
DS(on)
- Normalized
- 7V
I
D
- Amperes
-60
-50
- 6V
-40
-30
-20
-10
0
0
-1
-2
-3
-4
-5
-6
-7
-8
- 5V
I
D
= - 90A
1.6
I
D
= - 45A
1.2
0.8
0.4
-50
-25
0
25
50
75
100
125
150
V
DS
- Volts
T
J
- Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= - 45A Value vs.
Drain Current
2.6
2.4
2.2
V
GS
= -10V
T
J
= 125ºC
Fig. 6. Maximum Drain Current vs.
Case Temperature
-60
-50
R
DS(on)
- Normalized
2.0
1.8
1.6
1.4
1.2
T
J
= 25ºC
1.0
0.8
0
-30
-60
-90
-120
-150
-180
-210
-240
-40
I
D
- Amperes
-30
-20
-10
0
-50
-25
0
25
50
75
100
125
150
I
D
- Amperes
T
C
- Degrees Centigrade
© 2016 IXYS CORPORATION, All Rights Reserved
IXTR90P20P
Fig. 7. Input Admittance
-120
T
J
= - 40ºC
25ºC
125ºC
100
90
80
70
25ºC
T
J
= - 40ºC
Fig. 8. Transconductance
-100
g
f s
- Siemens
-80
I
D
- Amperes
60
50
40
30
20
10
125ºC
-60
-40
-20
0
-3.0
0
-3.5
-4.0
-4.5
-5.0
-5.5
-6.0
-6.5
-7.0
0
-20
-40
-60
-80
-100
-120
-140
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-270
-240
-210
-180
-10
-9
-8
-7
V
DS
= -100V
I
D
= - 45A
I
G
= -1mA
Fig. 10. Gate Charge
I
S
- Amperes
V
GS
- Volts
T
J
= 125ºC
T
J
= 25ºC
-6
-5
-4
-3
-2
-1
0
-150
-120
-90
-60
-30
0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
-4.5
0
20
40
60
80
100
120
140
160
180
200
220
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
100,000
Fig. 12. Forward-Bias Safe Operating Area
- 1000
R
DS(on)
Limit
T
J
= 150ºC
25µs
Ciss
f
= 1MHz
Capacitance - PicoFarads
- 100
T
C
= 25ºC
Single Pulse
100µs
1ms
10,000
Coss
I
D
- Amperes
- 10
1,000
10ms
-1
Crss
100ms
DC
100
0
-5
-10
-15
-20
-25
-30
-35
-40
- 0.1
- 10
- 100
- 1000
V
DS
- Volts
V
DS
- Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTR90P20P
Fig. 13. Maximum Transient Thermal Impedance
1
Z
(th)JC
- ºC / W
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2016 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_90P20P(B9)03-25-09-D
