Depletion Mode
MOSFET
IXTY1R6N100D2
IXTA1R6N100D2
IXTP1R6N100D2
D
V
DSX
I
D(on)
R
DS(on)
=
>
1000V
1.6A
10
N-Channel
TO-252 (IXTY)
G
S
G
S
D (Tab)
TO-263 AA (IXTA)
Symbol
V
DSX
V
GSX
V
GSM
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-220)
TO-252
TO-263
TO-220
Test Conditions
T
J
= 25C to 150C
Continuous
Transient
T
C
= 25C
Maximum Ratings
1000
20
30
100
- 55 ... +150
150
- 55 ... +150
300
260
1.13 / 10
0.35
2.50
3.00
V
V
V
W
C
C
C
°C
°C
Nm/lb.in.
g
g
g
G
DS
D (Tab)
G
S
D (Tab)
TO-220AB (IXTP)
G = Gate
S = Source
D
= Drain
Tab = Drain
Features
• Normally ON Mode
• International Standard Packages
• Molding Epoxies Meet UL 94 V-0
Flammability Classification
V
- 4.5
V
Advantages
• Easy to Mount
• Space Savings
• High Power Density
Applications
•
•
•
•
•
•
Audio Amplifiers
Start-Up Circuits
Protection Circuits
Ramp Generators
Current Regulators
Active Loads
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
BV
DSX
V
GS(off)
I
GSX
I
DSX(off)
R
DS(on)
I
D(on)
V
GS
= - 5V, I
D
= 250A
V
DS
= 25V, I
D
= 100A
V
GS
=
20V,
V
DS
= 0V
V
DS
= V
DSX
, V
GS
= - 5V
V
GS
= 0V, I
D
= 0.8A, Note 1
V
GS
= 0V, V
DS
= 50V, Note 1
T
J
= 125C
Characteristic Values
Min.
Typ.
Max.
1000
- 2.5
100
nA
2
A
25
A
10
1.6
A
© 2017 IXYS CORPORATION, All Rights Reserved
DS100185D(9/17)
IXTY1R6N100D2
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
TO-220
V
GS
= 5V, V
DS
= 500V, I
D
= 0.8A
Resistive Switching Times
V
GS
=
5V,
V
DS
= 500V, I
D
= 0.8A
R
G
= 5 (External)
V
GS
= -10V, V
DS
= 25V, f = 1MHz
V
DS
= 30V, I
D
= 0.8A, Note 1
Characteristic Values
Min.
Typ.
Max.
0.65
1.10
645
43
11
27
65
34
41
27.0
1.6
13.5
0.50
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.25
C/W
C/W
IXTA1R6N100D2
IXTP1R6N100D2
Safe-Operating-Area Specification
Symbol
SOA
Test Conditions
V
DS
= 800V, I
D
= 75mA, T
C
= 75C, Tp = 5s
Characteristic Values
Min.
Typ.
Max.
60
W
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
V
SD
t
rr
I
RM
Q
RM
I
F
= 1.6A, V
GS
= -10V, Note 1
I
F
= 1.6A, -di/dt = 100A/s
V
R
= 100V, V
GS
= -10V
Characteristic Values
Min.
Typ.
Max.
0.8
970
9.96
4.80
1.3
V
ns
A
μC
Note 1. Pulse test, t
300s, duty cycle, d
2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTY1R6N100D2
o
IXTA1R6N100D2
IXTP1R6N100D2
o
Fig. 1. Output Characteristics @ T
J
= 25 C
1.6
1.4
1.2
V
GS
= 5V
1V
0V
4.0
3.5
3.0
Fig. 2. Extended Output Characteristics @ T
J
= 25 C
V
GS
= 5V
2V
1V
0V
I
D
- Amperes
0.8
0.6
0.4
0.2
-1V
I
D
- Amperes
1.0
2.5
2.0
-1V
1.5
1.0
0.5
- 2V
- 3V
0
10
20
30
40
50
60
70
80
- 2V
- 3V
0.0
0
2
4
6
8
10
12
14
0.0
V
DS
- Volts
V
DS
- Volts
o
o
Fig. 3. Output Characteristics @ T
J
= 125 C
1.6
1.4
1.2
V
GS
= 5V
1V
0V
1E-01
1E-02
1E-03
Fig. 4. Drain Current @ T
J
= 25 C
V
GS
= - 3.25V
- 3.50V
- 3.75V
- 4.00V
- 4.25V
1E-06
1E-07
1E-08
1E-09
I
D
- Amperes
0.8
0.6
0.4
0.2
0
0
4
8
12
16
20
24
28
32
- 2V
I
D
- Amperes
1
-1V
1E-04
1E-05
- 4.50V
- 4.75V
- 3V
0
100
200
300
400
500
600
700
800
900 1000 1100 1200
V
DS
- Volts
V
DS
- Volts
o
Fig. 5. Drain Current @ T
J
= 100 C
1.E-01
1.E+12
1.E+11
1.E+10
1.E+09
1.E+08
1.E+07
1.E+06
1.E+05
1.E+04
Fig. 6. Dynamic Resistance vs. Gate Voltage
∆
V
DS
= 700V - 100V
1.E-02
V
GS
= - 3.50V
- 3.75V
1.E-03
I
D
- Amperes
R
O
- Ohms
- 4.00V
- 4.25V
- 4.50V
- 4.75V
1.E-04
T
J
= 25 C
o
1.E-05
T
J
= 100 C
o
1.E-06
1.E-07
0
100
200
300
400
500
600
700
800
900 1000 1100 1200
-4.8
-4.6
-4.4
-4.2
-4.0
-3.8
-3.6
-3.4
-3.2
V
DS
- Volts
V
GS
- Volts
© 2017 IXYS CORPORATION, All Rights Reserved
IXTY1R6N100D2
IXTA1R6N100D2
IXTP1R6N100D2
Fig. 7. Normalized R
DS(on)
vs. Junction Temperature
2.6
V
GS
= 0V
2.2
I
D
= 0.8A
2.6
2.4
2.2
Fig. 8. R
DS(on)
Normalized to I
D
= 0.8A Value
vs. Drain Current
V
GS
= 0V
5V
R
DS(on)
- Normalized
1.8
R
DS(on)
- Normalized
2.0
1.8
1.6
1.4
1.2
1.0
0.8
T
J
= 125 C
o
1.4
1.0
T
J
= 25 C
o
0.6
0.2
-50
-25
0
25
50
75
100
125
150
0.6
0
0.5
1
1.5
2
2.5
3
T
J
- Degrees Centigrade
I
D
- Amperes
Fig. 9. Input Admittance
2.5
V
DS
= 30V
2.0
2.2
2.0
1.8
1.6
1.5
V
DS
= 30V
Fig. 10. Transconductance
T
J
= - 40 C
o
g
f s
- Siemens
I
D
- Amperes
1.4
1.2
1.0
0.8
0.6
0.4
0.2
25 C
125 C
o
o
1.0
T
J
= 125 C
25 C
o
- 40 C
o
o
0.5
0.0
-4
-3.5
-3
-2.5
-2
-1.5
-1
-0.5
0
0.0
0
0.5
1
1.5
2
2.5
V
GS
- Volts
I
D
- Amperes
1.3
Fig. 11. Breakdown and Threshold Voltages
vs. Junction Temperature
Fig. 12. Forward Voltage Drop of Intrinsic Diode
5
V
GS
= -10V
1.2
4
V
GS(off)
@ V
DS
= 25V
BV / V
GS(off)
- Normalized
I
S
- Amperes
1.1
BV
DSX
@ V
GS
= - 5V
1.0
3
2
T
J
= 125 C
o
0.9
1
T
J
= 25 C
o
0.8
-50
-25
0
25
50
75
100
125
150
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
T
J
- Degrees Centigrade
V
SD
- Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTY1R6N100D2 IXTA1R6N100D2
IXTP1R6N100D2
Fig. 13. Capacitance
10,000
5
4
Ciss
3
2
V
DS
= 500V
I
D
= 0.8A
I
G
= 1mA
Fig. 14. Gate Charge
f
= 1 MHz
Capacitance - PicoFarads
1,000
V
GS
- Volts
1
0
-1
-2
100
Coss
10
C rss
-3
-4
1
0
5
10
15
20
25
30
35
40
-5
0
5
10
15
20
25
V
DS
- Volts
Q
G
- NanoCoulombs
Fig. 15. Forward-Bias Safe Operating Area
10
R
DS(on)
Limit
100μs
1
1
1ms
10ms
0.1
T
J
= 150 C
T
C
= 25 C
Single Pulse
100
o
o
Fig. 16. Forward-Bias Safe Operating Area
10
R
DS(on)
Limit
25μs
100μs
@ T
C
= 25 C
o
@ T
C
= 75
o
C
I
D
- Amperes
I
D
- Amperes
1ms
10ms
100ms
T
J
= 150 C
o
100ms
DC
0.1
DC
10.00
0.01
10
Fig. 17. Maximum Transient Thermal Impedance
0.01
1,000
10
100
1,000
T
C
= 75 C
Single Pulse
o
V
DS
- Volts
V
DS
- Volts
Fig. 17. Maximum Transient Thermal Impedance
2.00
1.00
hvjv
Z
(th)JC
- K / W
0.10
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2017 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_1R6N100D2(2C)8-24-09
