Advance Technical Information
High Voltage XPT
TM
IGBT
IXYT30N450HV
IXYH30N450HV
V
CES
= 4500V
I
C110
= 30A
V
CE(sat)
3.9V
TO-268HV (IXYT)
G
E
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-247HV)
TO-268HV
TO-247HV
Test Conditions
T
C
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GE
= 1M
Continuous
Transient
T
C
= 25°C
T
C
= 110°C
T
C
= 25°C, 1ms
V
GE
= 15V, T
VJ
= 125°C, R
G
= 10
Clamped Inductive Load
T
C
= 25°C
Maximum Ratings
4500
4500
± 20
± 30
60
30
200
I
CM
= 90
3600
430
-55 ... +150
150
-55 ... +150
300
260
1.13/10
4.0
6.0
V
V
V
V
A
A
A
A
V
W
°C
°C
°C
°C
°C
Nm/lb.in
g
g
C
(Tab)
TO-247HV (IXYH)
G
E
C
G = Gate
E = Emitter
C (Tab)
C
= Collector
Tab = Collector
Features
High Voltage Packages
High Blocking Voltage
High Peak Current Capability
Low Saturation Voltage
Advantages
Low Gate Drive Requirement
High Power Density
Symbol Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
= 250μA, V
GE
= 0V
I
C
= 250μA, V
CE
= V
GE
V
CE
= V
CES
, V
GE
= 0V
T
J
= 125°C
V
CE
= 0V, V
GE
= ± 20V
I
C
= 30A, V
GE
= 15V, Note 1
T
J
= 125°C
Characteristic Values
Min.
Typ.
Max.
4500
3.0
5.0
25
±200
3.2
4.5
3.9
V
V
μA
nA
V
V
Applications
1
m
A
Switch-Mode and Resonant-Mode
Power Supplies
Uninterruptible Power Supplies (UPS)
Laser Generators
Capacitor Discharge Circuits
AC Switches
© 2014 IXYS CORPORATION, All Rights Reserved
DS100614(5/14)
IXYT30N450HV
IXYH30N450HV
Symbol Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
g
fS
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
R
thJC
R
thCS
TO-247HV
0.21
Resistive Switching Times, T
J
= 25°C
I
C
= 30A, V
GE
= 15V
V
CE
= 960V, R
G
= 10
Resistive Switching Times, T
J
= 125°C
I
C
= 30A, V
GE
= 15V
V
CE
= 960V, R
G
= 10
I
C
= 30A, V
GE
= 15V, V
CE
= 1000V
V
CE
= 25V, V
GE
= 0V, f = 1MHz
I
C
= 30A, V
CE
= 10V, Note 1
Characteristic Values
Min.
Typ.
Max.
11
18
1840
83
35
88
11
40
38
318
168
1220
42
590
180
1365
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
ns
ns
ns
0.29 °C/W
°C/W
1
e
3
2
L4
e
D
TO-268HV Outline
E
L2
A
C2
E1
H
3
D2
2
1
D1
A1
C
D3
b
PINS:
1 - Gate 2 - Emitter
3 - Collector
L3
A2
L
TO-247HV Outline
R
E
0P
Q S
A2
A
0P1
E1
Note:
1.
Pulse test, t < 300s, duty cycle, d < 2%.
D
D1
4
D2
1 2
3
L1
A3
2X
A1
E2
E3
4X
D3
L
e
e1
c
b
PINS:
1 - Gate 2 - Emitter
3, 4 - Collector
3X
3X
b1
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute
a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXYT30N450HV
IXYH30N450HV
Fig. 1. Output Characteristics @ T
J
= 25ºC
60
V
GE
= 25V
19V
15V
13V
11V
280
240
V
GE
= 25V
23V
21V
19V
17V
200
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
50
40
I
C
- Amperes
I
C
-
Amperes
15V
160
13V
9V
30
120
80
20
7V
10
5V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
0
5
10
15
20
11V
9V
7V
25
30
40
V
CE
- Volts
V
CE
- Volts
Fig. 3. Output Characteristics @ T
J
= 125ºC
60
V
GE
= 25V
19V
15V
13V
11V
2.4
2.2
2.0
V
GE
= 15V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
50
I
C
= 60A
V
CE(sat)
- Normalized
40
1.8
1.6
1.4
1.2
1.0
0.8
I
C
= 15A
I
C
= 30A
I
C
- Amperes
30
9V
20
7V
10
5V
0
0
1
2
3
4
5
6
7
0.6
0.4
-50
-25
0
25
50
75
100
125
150
V
CE
- Volts
T
J
- Degrees Centigrade
8
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
T
J
= 25ºC
Fig. 6. Input Admittance
80
70
60
T
J
= - 40ºC
25ºC
125ºC
7
I
C
-
Amperes
6
V
CE
- Volts
50
40
30
20
10
0
5
I
C
= 60A
4
30A
3
15A
2
6
7
8
9
10
11
12
13
14
15
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5
10
V
GE
- Volts
V
GE
- Volts
© 2014 IXYS CORPORATION, All Rights Reserved
IXYT30N450HV
IXYH30N450HV
Fig. 7. Transconductance
30
T
J
= - 40ºC
25
16
14
12
V
CE
= 1000V
I
C
= 30A
I
G
= 10mA
Fig. 8. Gate Charge
g
f s
-
Siemens
20
25ºC
15
125ºC
V
GE
- Volts
10
8
6
4
10
5
2
0
0
10
20
30
40
50
60
70
80
0
10
20
30
40
50
60
70
80
90
0
I
C
- Amperes
Q
G
- NanoCoulombs
Fig. 9. Capacitance
10,000
100
Fig. 10. Reverse-Bias Safe Operating Area
90
80
f
= 1 MHz
Capacitance - PicoFarads
1,000
Cies
70
I
C
- Amperes
60
50
40
30
20
T
J
= 125ºC
R
G
= 15Ω
dv / dt < 10V / ns
100
Coes
Cres
10
0
5
10
15
20
25
30
35
40
10
0
500
1000
1500
2000
2500
3000
3500
4000
4500
V
CE
- Volts
V
CE
- Volts
Fig. 11. Maximum Transient Thermal Impedance
1
0.1
Z
(th)JC
- ºC / W
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS REF: Y_30N450(H7-645) 5-20-14-A
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
www.littelfuse.com/disclaimer-electronics.
