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J112-D26Z

JFET N-Channel Switch

器件类别:分立半导体    晶体管   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

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器件参数
参数名称
属性值
Brand Name
ON Semiconductor
是否无铅
不含铅
厂商名称
ON Semiconductor(安森美)
包装说明
CYLINDRICAL, O-PBCY-T3
制造商包装代码
135AR
Reach Compliance Code
compliant
Is Samacsys
N
配置
SINGLE
最大漏源导通电阻
50 Ω
FET 技术
JUNCTION
最大反馈电容 (Crss)
5 pF
JEDEC-95代码
TO-92
JESD-30 代码
O-PBCY-T3
元件数量
1
端子数量
3
工作模式
DEPLETION MODE
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
CYLINDRICAL
峰值回流温度(摄氏度)
NOT SPECIFIED
极性/信道类型
N-CHANNEL
最大功率耗散 (Abs)
0.4 W
认证状态
Not Qualified
表面贴装
NO
端子形式
THROUGH-HOLE
端子位置
BOTTOM
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
SWITCHING
晶体管元件材料
SILICON
Base Number Matches
1
文档预览
Is Now Part of
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www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
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device numbers. The most current and up-to-date ordering information can be found at
www.onsemi.com.
Please
email any questions regarding the system integration to
Fairchild_questions@onsemi.com.
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J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 — N-Channel Switch
January 2015
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 /
MMBFJ113
N-Channel Switch
Features
• This device is designed for low level analog switching,
sample and hold circuits and chopper stabilized amplifiers.
• Sourced from process 51
• Source & Drain are interchangeable.
G
G
S
TO-92
D
S
SOT-23
D
Note: Source & Drain
are interchangeable
Figure 1. J111 / J112 / J113 Device Package
Figure 2. MMBFJ111 / MMBFJ112 / MMBFJ113
Device Package
Ordering Information
Part Number
J111
J111_D26Z
J111_D74Z
J112
J112_D26Z
J112_D27Z
J112_D74Z
J113
J113_D74Z
J113_D75Z
MMBFJ111
MMBFJ112
MMBFJ113
Top Mark
J111
J111
J111
J112
J112
J112
J112
J113
J113
J113
6P
6R
6S
Package
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
SOT-23 3L
SOT-23 3L
SOT-23 3L
Packing Method
Bulk
Tape and Reel
Ammo
Bulk
Tape and Reel
Tape and Reel
Ammo
Bulk
Ammo
Ammo
Tape and Reel
Tape and Reel
Tape and Reel
© 1997 Fairchild Semiconductor Corporation
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 Rev. 1.5
www.fairchildsemi.com
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 — N-Channel Switch
Absolute Maximum Ratings
(1), (2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
DG
V
GS
I
GF
T
J
, T
STG
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Parameter
Value
35
-35
50
-55 to 150
Unit
V
V
mA
°C
Operating and Storage Junction Temperature Range
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
Thermal Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Max.
Symbol
Parameter
J111 / J112 /
J113
(3)
625
5.0
125
200
357
MMBFJ111 /
MMBFJ112 /
MMBFJ113
(4)
350
2.8
Unit
P
D
R
θJC
R
θJA
Total Device Dissipation
Derate Above 25°C
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
mW
mW/°C
°C/W
°C/W
Notes:
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
4. Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead minimum 6cm
2
.
© 1997 Fairchild Semiconductor Corporation
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 Rev. 1.5
www.fairchildsemi.com
2
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 — N-Channel Switch
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol
Off Characteristics
V
(BR)GSS
I
GSS
V
GS
(off)
I
D
(off)
Parameter
Gate-Source Breakdown Voltage
Gate Reverse Current
Gate-Source Cut-Off Voltage
Drain Cutoff Leakage Current
Conditions
I
G
= -1.0
μA,
V
DS
= 0
V
GS
= -15 V, V
DS
= 0
111
V
DS
= 15 V, I
D
= 1.0
μA
V
DS
= 5.0 V, V
GS
= -10 V
111
112
113
Min.
-35
Max.
Unit
V
-1.0
-3.0
-1.0
-0.5
-10.0
-5.0
-3.0
1.0
20
5.0
2.0
30
50
100
nA
V
nA
On Characteristics
I
DSS
Zero-Gate Voltage Drain Current
(5)
V
DS
= 15 V, V
GS
= 0
112
113
111
r
DS
(on)
Drain-Source On Resistance
V
DS
0.1 V, V
GS
= 0
112
113
Small Signal Characteristics
C
dg
(on)
C
sg
(on)
C
dg
(off)
C
sg
(off)
Drain-Gate &Source-Gate On
Capacitance
Drain-Gate Off Capacitance
Source-Gate Off Capacitance
V
DS
= 0, V
GS
= 0, f = 1.0 MHz
V
DS
= 0, V
GS
= -10 V, f = 1.0 MHz
V
DS
= 0, V
GS
= -10 V, f = 1.0 MHz
28
5.0
5.0
pF
pF
pF
mA
Ω
Note:
5. Pulse test: pulse width
300
μs,
duty cycle
2%.
© 1997 Fairchild Semiconductor Corporation
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 Rev. 1.5
www.fairchildsemi.com
3
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 — N-Channel Switch
Typical Performance Characteristics
r
10
- DRAIN CURRENT (mA)
V
GS
= 0 V
- 0.2 V
- TRANSCONDUCTANCE (mmhos)
T
A
= 25°C
TYP V
GS(off)
= - 2.0 V
100
r
DS
100
DS
- DRAIN "ON" RESISTANCE
(Ω)
Ω
8
- 0.4 V
50
50
6
- 0.6 V
20
g
4
- 0.8 V
fs
I
DSS
, g
fs
@ V
DS
= 15V,
V
GS
= 0 PULSED
r
DS
@ 1.0 mA, V
GS
= 0
V
GS(off)
@ V
DS
= 15V,
I D = 1.0 nA
_
_
20
D
2
- 1.4 V
- 1.0 V
- 1.2 V
10
I
DSS
10
I
fs
g
0
0
0.4
0.8
1.2
1.6
V
DS
- DRAIN-SOURCE VOLTAGE (V)
2
5
_
0.5
_
1
V
GS (OFF)
_
2
5
- GATE CUTOFF VOLTAGE (V)
5
10
Figure 3. Common Drain-Source
Figure 4. Parameter Interactions
40
- DRAIN CURRENT (mA)
V
GS(off)
= - 3.0 V
- 55°C
16
- DRAIN CURRENT (mA)
V
GS(off)
= - 1.6 V
- 55°C
25°C
125°C
V
DS
= 15 V
30
25°C
125°C
V
GS(off)
= - 2.0 V
12
20
125°C
25°C
- 55°C
8
V
GS(off)
= - 1.1 V
125°C
25°C
- 55°C
10
V
DS
= 15 V
4
D
I
I
D
0
0
-1
-2
-3
V
GS
- GATE-SOURCE VOLTAGE (V)
0
0
-0.5
-1
-1.5
V
GS
- GATE-SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Transfer Characteristics
g
fs
- TRANSCONDUCTANCE (mmhos)
30
- TRANSCONDUCTANCE (mmhos)
V
GS(off)
= - 3.0 V
- 55°C
25°C
125°C
30
V
GS(off)
= - 1.6 V
- 55°C
20
V
GS(off)
= - 2.0 V
- 55°C
25°C
125°C
20
25°C
125°C
V
GS(off)
= - 1.1 V
10
10
- 55°C
25°C
125°C
V
DS
= 15 V
V
DS
= 15 V
0
-1
-2
V
GS
- GATE-SOURCE VOLTAGE (V)
-3
g
0
fs
0
0
-0.5
-1
-1.5
V
GS
- GATE-SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Transfer Characteristics
© 1997 Fairchild Semiconductor Corporation
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 Rev. 1.5
www.fairchildsemi.com
4
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参数对比
与J112-D26Z相近的元器件有:J112、J112-D74Z。描述及对比如下:
型号 J112-D26Z J112 J112-D74Z
描述 JFET N-Channel Switch JFET N-Channel Switch JFET N-Channel Switch
Brand Name ON Semiconductor ON Semiconductor ON Semiconductor
是否无铅 不含铅 不含铅 不含铅
厂商名称 ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美)
包装说明 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
制造商包装代码 135AR 135AN 135AR
Reach Compliance Code compliant compliant compliant
Is Samacsys N N N
配置 SINGLE SINGLE SINGLE
最大漏源导通电阻 50 Ω 50 Ω 50 Ω
FET 技术 JUNCTION JUNCTION JUNCTION
最大反馈电容 (Crss) 5 pF 5 pF 5 pF
JEDEC-95代码 TO-92 TO-92 TO-92
JESD-30 代码 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
元件数量 1 1 1
端子数量 3 3 3
工作模式 DEPLETION MODE DEPLETION MODE DEPLETION MODE
最高工作温度 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 ROUND ROUND ROUND
封装形式 CYLINDRICAL CYLINDRICAL CYLINDRICAL
峰值回流温度(摄氏度) NOT SPECIFIED 240 NOT SPECIFIED
极性/信道类型 N-CHANNEL N-CHANNEL N-CHANNEL
最大功率耗散 (Abs) 0.4 W 0.4 W 0.4 W
认证状态 Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 BOTTOM BOTTOM BOTTOM
处于峰值回流温度下的最长时间 NOT SPECIFIED 30 NOT SPECIFIED
晶体管应用 SWITCHING CHOPPER SWITCHING
晶体管元件材料 SILICON SILICON SILICON
Base Number Matches 1 1 1
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