2N1483, 2N1484, 2N1485, 2N1486
NPN Medium Power Silicon Transistor
Rev. V2
Features
•
Available in JAN, JANTX and JANTXV per MIL-PRF-19500/180
•
TO-8 Package
•
Ideal For Medium Power Applications That Require High Frequency
Switching in a Low Profile Package
Electrical Characteristics T
C
= +25
o
C unless otherwise specified)
Parameter
Test Conditions
I
C
= 100 mA dc
2N1483, 2N1485
2N1484, 2N1486
V
EB
= 1.5 V dc, I
C
= 0.25 mA dc
2N1483, 2N1485
2N1484, 2N1486
I
C
= 100 µA dc
2N1483, 2N1485
2N1484, 2N1486
V
EB
= 12 V dc
V
EB
= 1.5 V dc
V
CB
= 60 V dc, 2N1483, 2N1485
V
CB
= 100 V dc, 2N1484, 2N1486
V
CB
= 30 V dc, 2N1483, 2N1485
V
CB
= 50 V dc, 2N1484, 2N1486
Symbol Units
Min.
Max.
Collector
-
Emitter Breakdown Voltage
V
(BR)CEO
V dc
40
55
—
—
Collector
-
Emitter Breakdown Voltage
V
(BR)CEX
V dc
60
100
Collector
-
Base Breakdown Voltage
V
(BR)CBO
V dc
—
60
100
15
.25
.25
15
15
Emitter
-
Base Cutoff Current
Collector
-
Emitter Cutoff Current
I
EBO
I
CEX
µA dc
mA dc
—
Collector
-
Base Cutoff Current
I
CBO1
µA dc
Forward Current Transfer Ratio
V
CE
= 4.0 Vdc, I
C
= 750 mA dc
2N1483, 2N1484
2N1485, 2N1486
h
FE2
-
20
35
60
100
Base
-
Emitter Voltage (non-saturated)
Collector
-
Emitter Saturation Voltage
V
CE
= 4.0V dc, I
C
= 750 mA dc
Ic = 750 mA dc
I
B
= 75 mA dc 2N1483, 2N1484
I
B
= 40 mA dc 2N1485, 2N1486
V
BE
V dc
—
2.0
1.20
0.75
V
CE(SAT)
V dc
1
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for additional data sheets and product information.
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2N1483, 2N1484, 2N1485, 2N1486
NPN Medium Power Silicon Transistor
Rev. V2
Electrical Characteristics (T
C
= +25
o
C unless otherwise specified)
Parameter
Collector
-
Base Cutoff Current
Test Conditions
V
CB
= 60 V dc, 2N1483, 2N1485
V
CB
= 100 V dc, 2N1484, 2N1486
T
A
= +175
o
C
V
CB
= 30 V dc, 2N1483, 2N1485
V
CB
= 50 V dc, 2N1484, 2N1486
T
A
=
-55
o
C
V
CE
= 4.0 V dc, I
C
= 750 mA dc
2N1483, 2N1484
2N1485, 2N1486
Symbol Units
I
CBO3
µA dc
Min.
—
Max.
100
100
1.0
1.0
Collector
-
Base Cutoff Current
I
CBO2
mA
Forward
-
Current Transfer Ratio
h
FE2
-
10
17
Dynamic Characteristics
Small Signal, Short Circuit, Forward-Current
Transfer Ratio Cutoff Frequency
Open Circuit Output Capacitance
Switching Characteristics
Pulse Response
V
CC
= +12V dc, R
C
= 15.9
Ω,
I
B0
= I
B2
= 35 mA dc;
I
B1
= 65 mA dc
t
on
+ t
off
µs
—
25
V
CB
= 28 V dc, I
C
= 5.0 mA dc
V
CB
= 10 V dc, I
E
= 0, 100 kHz ≤ f ≤ 1 MHz
f
hfb
C
obo
kHz
pF
600
—
400
Absolute Maximum Ratings (T
A
= +25
o
C unless otherwise specified)
Ratings
Collector
-
Emitter Voltage
Collector
-
Base Voltage
Emitter
-
Base Voltage
Collector Current
Total Power Dissipation
@ T
A
= 25°C
(1)
@ T
C
= 25°C
(2)
Operating & Storage Temperature Range
(1)
(2)
Derate linearly 0.010 W/
o
C for T
A
> +25
o
C
Derate linearly 0.143 W/
o
C for T
C
> +25
o
C
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
T
J
, T
STG
2N1483
2N1485
40 V dc
60 V dc
12 V dc
3.0 A dc
1.75 W
25 W
-65°C
to +200°C
2N1484
2N1486
55 V dc
100 V dc
2
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Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N1483, 2N1484, 2N1485, 2N1486
NPN Medium Power Silicon Transistor
Rev. V2
Outline Drawing (TO-8)
3
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N1483, 2N1484, 2N1485, 2N1486
NPN Medium Power Silicon Transistor
Rev. V2
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4
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Visit
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for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
