2N2904AL and 2N2905AL
PNP SWITCHING SILICON
TRANSISTOR
Qualified per MIL-PRF-19500/290
DESCRIPTION
This family of 2N2904AL and 2N2905AL switching transistors are military qualified up to the
JANS level for high-reliability applications. These devices are also available in a TO-39
package. Microsemi also offers numerous other transistor products to meet higher and lower
power ratings with various switching speed requirements in both through-hole and surface-
mount packages.
Available on
commercial
versions
Qualified Levels:
JAN, JANTX, JANTXV
and JANS
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
•
•
•
JEDEC registered 2N2904 through 2N2905 series.
JAN, JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/290.
(See
part nomenclature
for all available options.)
RoHS compliant versions available (commercial grade only).
TO-5 Package
Also available in:
TO-39
(TO-205AD)
package
APPLICATIONS / BENEFITS
•
•
General purpose transistors for high speed switching applications.
Military and other high-reliability applications.
(long-leaded)
2N2904 & 2N2905A
MAXIMUM RATINGS
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Thermal Resistance Junction-to-Ambient
Thermal Resistance Junction-to-Case
Collector Current
Total Power Dissipation
@ T
A
= +25 °C
@ T
C
= +25 °C
(2)
(1)
Symbol
V
CEO
V
CBO
V
EBO
R
ӨJA
R
ӨJC
I
C
P
T
T
J
and T
stg
Value
60
60
5.0
195
50
600
0.8
3.0
-65 to +200
Unit
V
V
V
o
o
C/W
C/W
mA
W
°C
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Operating & Storage Junction Temperature Range
Notes:
1. For derating, see
figures 1 and 2.
2. For thermal impedance, see
figures 3 and 4.
T4-LDS-0186-1, Rev. 1 (121219)
©2012 Microsemi Corporation
Page 1 of 7
2N2904AL and 2N2905AL
MECHANICAL and PACKAGING
•
•
•
•
•
•
CASE: Hermetically sealed, kovar base, nickel cap.
TERMINALS: Tin/lead plate or RoHS compliant matte/tin (commercial grade only) over nickel.
MARKING: Part number, date code, manufacturer’s ID.
POLARITY: PNP (see package outline).
WEIGHT: Approximately 1.14 grams.
See
Package Dimensions
on last page.
PART NOMENCLATURE
JAN
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS Level
Blank = Commercial
JEDEC type number
(see
Electrical Characteristics
table)
2N2904
A
L
(e3)
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Long Leaded
Electrical Parameter Modifier
Symbol
C
obo
I
CEO
I
CEX
I
EBO
h
FE
V
CEO
V
CBO
V
EBO
SYMBOLS & DEFINITIONS
Definition
Common-base open-circuit output capacitance.
Collector cutoff current, base open.
Collector cutoff current, circuit between base and emitter.
Emitter cutoff current, collector open.
Common-emitter static forward current transfer ratio.
Collector-emitter voltage, base open.
Collector-emitter voltage, emitter open.
Emitter-base voltage, collector open.
T4-LDS-0186-1, Rev. 1 (121219)
©2012 Microsemi Corporation
Page 2 of 7
2N2904AL and 2N2905AL
ELECTRICAL CHARACTERISTICS
@ T
A
= +25 °C, unless otherwise noted
Parameters / Test Conditions
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
I
C
= 10 mA
Collector-Emitter Cutoff Voltage
V
CE
= 60 V
Collector-Base Cutoff Current
V
CB
= 60 V
All Types
V
CB
= 50 V
2N2904AL, 2N2905AL
Symbol
Min.
Max.
Unit
V
(BR)CEO
I
CES
I
CBO1
I
CBO2
I
CBO3
I
CBO
60
1.0
10
10
10
10
10
V
µA
µA
nA
µA
nA
µA
nA
µA
V
CB
= 50 V @ T
A
= +150 ºC 2N2904AL, 2N2905AL
Collector-Base Cutoff Current
V
CB
= 50 V
V
CB
= 60 V
Emitter-Base Cutoff Current
V
EB
= 3.5 V
V
EB
= 5.0 V
ON CHARACTERISTICS
(1)
Forward-Current Transfer Ratio
I
C
= 0.1 mA, V
CE
= 10 V
I
C
= 1.0 mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V
I
C
= 150 mA, V
CE
= 10 V
2N2904AL
2N2905AL
2N2904AL
2N2905AL
2N2904AL
2N2905AL
2N2904AL
2N2905AL
2N2904AL
2N2905AL
I
EBO
50
10
40
75
40
100
h
FE
40
100
40
100
40
50
V
CE(sat)
0.4
1.6
1.3
2.6
V
120
300
175
450
I
C
= 500 mA, V
CE
= 10 V
Collector-Emitter Saturation Voltage
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
Base-Emitter Saturation Voltage
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
V
BE(sat)
V
(1) Pulse Test: Pulse Width = 300 µs, duty cycle ≤ 2.0%.
T4-LDS-0186-1, Rev. 1 (121219)
©2012 Microsemi Corporation
Page 3 of 7
2N2904AL and 2N2905AL
ELECTRICAL CHARACTERISTICS
@ T
A
= +25 °C, unless otherwise noted (continued)
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Small-Signal Short-Circuit Forward-Current
Transfer Ratio
I
C
= 1.0 mA, V
CE
= 10 V, f = 1.0 kHz
Small-Signal Short-Circuit Forward-Current
Transfer Ratio
I
C
= 50 mA, V
CE
= 20 V, f = 100 MHz
Output Capacitance
V
CB
= 10 V, I
E
= 0, 100 kHz
≤
f
≤
1.0MHz
Iutput Capacitance
V
EB
= 2.0 V, I
C
= 0, 100 kHz
≤
f
≤
1.0MHz
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-On Time
Turn-Off Time
Symbol
t
t
Symbol
Min.
Max.
Unit
h
fe
|h
fe
|
C
obo
C
ibo
100
2.0
8.0
30
pF
pF
Min.
Max.
45
300
Unit
ns
ns
on
off
T4-LDS-0186-1, Rev. 1 (121219)
©2012 Microsemi Corporation
Page 4 of 7
2N2904AL and 2N2905AL
GRAPHS
DC Operation Maximum Rating (W)
T
a
(°C) (Ambient)
FIGURE 1
Derating (R
θJA
) PCB
DC Operation Maximum Rating (W)
Tc (ºC) (Case)
FIGURE 2
Derating (R
θJA
) PCB
T4-LDS-0186-1, Rev. 1 (121219)
©2012 Microsemi Corporation
Page 5 of 7
