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JAN2N2906A

Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-18, HERMETIC SEALED, METAL CAN-3

器件类别:分立半导体    晶体管   

厂商名称:Semicoa

厂商官网:http://www.snscorp.com/Semicoa.htm

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
零件包装代码
BCY
包装说明
CYLINDRICAL, O-MBCY-W3
针数
3
Reach Compliance Code
compliant
ECCN代码
EAR99
最大集电极电流 (IC)
0.6 A
集电极-发射极最大电压
60 V
配置
SINGLE
最小直流电流增益 (hFE)
40
JEDEC-95代码
TO-18
JESD-30 代码
O-MBCY-W3
元件数量
1
端子数量
3
最高工作温度
200 °C
封装主体材料
METAL
封装形状
ROUND
封装形式
CYLINDRICAL
峰值回流温度(摄氏度)
NOT SPECIFIED
极性/信道类型
PNP
最大功率耗散 (Abs)
0.4 W
认证状态
Qualified
参考标准
MIL-19500/291
表面贴装
NO
端子形式
WIRE
端子位置
BOTTOM
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管元件材料
SILICON
标称过渡频率 (fT)
200 MHz
Base Number Matches
1
文档预览
2N2906A
Silicon PNP Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500
Appendix E
JAN level (2N2906AJ)
JANTX level (2N2906AJX)
JANTXV level (2N2906AJV)
JANS level (2N2906AJS)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
Radiation testing (total dose) upon request
Applications
General purpose
Low power
PNP silicon transistor
Features
Hermetically sealed TO-18 metal can
Also available in chip configuration
Chip geometry 0600
Reference document:
MIL-PRF-19500/291
Benefits
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power Dissipation, T
A
= 25
O
C
Derate linearly above 37.5
O
C
Thermal Resistance
Operating Junction Temperature
Storage Temperature
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
Qualification Levels: JAN, JANTX,
JANTXV and JANS
Radiation testing available
T
C
= 25°C unless otherwise specified
Rating
60
60
5
600
0.5
3.08
325
-65 to +200
-65 to +200
Unit
Volts
Volts
Volts
mA
W
mW/°C
°C/W
°C
°C
R
θJA
T
J
T
STG
Copyright 2002
Rev. J
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 1
www.SEMICOA.com
2N2906A
Silicon PNP Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25°C
Off Characteristics
Parameter
Collector-Emitter Breakdown Voltage
Collector-Base Cutoff Current
Collector-Base Cutoff Current
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
Emitter-Base Cutoff Current
On Characteristics
Parameter
Symbol
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
h
FE6
V
BEsat1
V
BEsat2
V
CEsat1
V
CEsat2
Symbol
|h
FE
|
h
FE
C
OBO
C
IBO
t
on
t
off
Test Conditions
I
C
= 0.1 mA, V
CE
= 10 Volts
I
C
= 1.0 mA, V
CE
= 10 Volts
I
C
= 10 mA, V
CE
= 10 Volts
I
C
= 150 mA, V
CE
= 10 Volts
I
C
= 500 mA, V
CE
= 10 Volts
I
C
= 10 mA, V
CE
= 10 Volts
T
A
= -55
O
C
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
Test Conditions
V
CE
= 20 Volts, I
C
= 20 mA,
f = 100 MHz
V
CE
= 10 Volts, I
C
= 1 mA,
f = 1 kHz
V
CB
= 10 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
V
EB
= 0.5 Volts, I
C
= 0 mA,
100 kHZ < f < 1 MHz
Symbol
V
(BR)CEO
I
CBO1
I
CBO2
I
CBO3
I
CES
I
EBO1
I
EBO2
Test Conditions
I
C
= 10 mA
V
CB
= 60 Volts
V
CB
= 50 Volts
V
CB
= 50 Volts, T
A
= 150
O
C
V
CE
= 50 Volts
V
EB
= 5 Volts
V
EB
= 4 Volts
Min
60
10
10
10
50
10
50
Typ
Max
Units
Volts
µA
nA
µA
nA
µA
nA
Pulse Test: Pulse Width = 300
µs,
Duty Cycle
2.0%
DC Current Gain
Min
40
40
40
40
40
20
0.6
Typ
Max
175
120
Units
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Dynamic Characteristics
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Small Signal Short Circuit Forward
Current Transfer Ratio
Open Circuit Output Capacitance
Open Circuit Input Capacitance
Switching Characteristics
Saturated Turn-On Time
Saturated Turn-Off Time
1.3
2.6
0.4
1.6
Volts
Volts
Min
2.0
40
Typ
Max
Units
8
30
pF
pF
45
300
ns
ns
Copyright 2002
Rev. J
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
查看更多>
参数对比
与JAN2N2906A相近的元器件有:JANTX2N2906A、JANTXV2N2906A、JANS2N2906A。描述及对比如下:
型号 JAN2N2906A JANTX2N2906A JANTXV2N2906A JANS2N2906A
描述 Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-18, HERMETIC SEALED, METAL CAN-3 Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-18, HERMETIC SEALED, METAL CAN-3 Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-18, HERMETIC SEALED, METAL CAN-3 Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-18, TO-18, 3 PIN
是否Rohs认证 符合 符合 符合 符合
零件包装代码 BCY BCY BCY BCY
包装说明 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3
针数 3 3 3 3
Reach Compliance Code compliant compli compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99
最大集电极电流 (IC) 0.6 A 0.6 A 0.6 A 0.6 A
集电极-发射极最大电压 60 V 60 V 60 V 60 V
配置 SINGLE SINGLE SINGLE SINGLE
最小直流电流增益 (hFE) 40 40 40 40
JEDEC-95代码 TO-18 TO-18 TO-18 TO-18
JESD-30 代码 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3
元件数量 1 1 1 1
端子数量 3 3 3 3
最高工作温度 200 °C 200 °C 200 °C 200 °C
封装主体材料 METAL METAL METAL METAL
封装形状 ROUND ROUND ROUND ROUND
封装形式 CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
极性/信道类型 PNP PNP PNP PNP
最大功率耗散 (Abs) 0.4 W 0.4 W 0.4 W 0.4 W
认证状态 Qualified Qualified Qualified Qualified
参考标准 MIL-19500/291 MIL-19500/291 MIL-19500/291 MIL-19500/291M
表面贴装 NO NO NO NO
端子形式 WIRE WIRE WIRE WIRE
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM
晶体管元件材料 SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 200 MHz 200 MHz 200 MHz 200 MHz
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
Base Number Matches 1 1 1 -
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