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JANS1N6314US

Zener Diode, 3.9V V(Z), 5%, 0.5W, Silicon, Unidirectional, HERMETIC SEALED, GLASS, D-5D, 2 PIN

器件类别:分立半导体    二极管   

厂商名称:Compensated Devices Inc

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器件参数
参数名称
属性值
厂商名称
Compensated Devices Inc
包装说明
O-XELF-R2
Reach Compliance Code
unknown
Is Samacsys
N
其他特性
METALLURGICALLY BONDED
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
ZENER DIODE
JESD-30 代码
O-XELF-R2
元件数量
1
端子数量
2
封装主体材料
UNSPECIFIED
封装形状
ROUND
封装形式
LONG FORM
极性
UNIDIRECTIONAL
最大功率耗散
0.5 W
认证状态
Not Qualified
参考标准
MIL-19500/533F
标称参考电压
3.9 V
表面贴装
YES
技术
ZENER
端子形式
WRAP AROUND
端子位置
END
最大电压容差
5%
工作测试电流
20 mA
Base Number Matches
1
文档预览
• AVAILABLE IN
JAN, JANTX, JANTXV
AND
JANS
PER MIL-PRF-19500/533
• 500 mW ZENER DIODES
• NON CAVITY CONSTRUCTION
• METALLURGICALLY BONDED
1N6309US
THRU
1N6320US
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Power Dissapation: 500 mW@TEC=+125ºC
Power Derating: 10 mW/°C above TEC=+125ºC
Forward Voltage: 1.4V dc @ IF=1A dc (pulsed)
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified
VZ2
NOM.
±5% @
IZ2
VOLTS
1N6309US
1N6310US
1N6311US
1N6312US
1N6313US
1N6314US
1N6315US
1N6316US
1N6317US
1N6318US
1N6319US
1N6320US
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
VZ1
MIN.
@IZ1
250µ A
VOLTS
1.1
1.2
1.3
1.5
1.8
2.0
2.4
2.8
3.3
4.3
5.2
6.0
IZ2
TEST
CURRENT
mA
20
20
20
20
20
20
20
20
20
20
20
20
ZZ
@
IZ2
OHMS
30
30
29
24
22
20
18
16
14
8.0
3.0
3.0
ZZK
@
250µ A
OHMS
1200
1300
1400
1400
1400
1700
1400
1500
1300
1200
800
400
IZM
VZ (reg)
v
VZ
(1)
mA
177
157
141
128
117
108
99
90
83
76
68
63
VOLTS
1.5
1.5
1.5
1.6
1.6
1.6
0.9
0.5
0.4
0.4
0.3
0.35
AMPS
2.5
2.2
2.0
1.8
1.65
1.5
1.4
1.27
1.17
1.10
0.97
1.23
VOLTS
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.5
2.0
2.5
3.5
4.0
IZSM
SURGE
VR
IR1
@
25ºC
µ
A
100
60
30
5.0
3.0
2.0
2.0
5.0
5.0
5.0
5.0
2.0
IR2
ND
@ @250
µA
TA=
1-3 kHz
150ºC
µ
A
200
150
100
20
12
12
12
12
12
10
10
50
µ
V/ Hz
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
5.0
5.0
DIM
D
F
G
S
MILLIMETERS
MIN
MAX
1.78
2.16
0.48
0.71
4.19
4.95
0.08MIN.
INCHES
MIN MAX
0.070 0.085
0.019 0.028
0.165 0.195
0.003MIN.
TYPE
FIGURE 1
DESIGN DATA
CASE:
D-5D, Hermetically sealed glass
case, per MIL-PRF- 19500/533
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE: (R
OJEC):
50 ˚C/W maximum
NOTE 1:
v
VZ = VZ @ 20 mAdc minus VZ @ 2mAdc
THERMAL IMPEDANCE: (Z
OJX): 15
˚C/W maximum
POLARITY:
Diode to be operated with
the banded (cathode) end positive.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) of this device is approximately
+ 4PPM / °C. The COE of the Mounting
Surface System should be selected to
provide a suitable match with this
device.
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com
1N6309US
Pd, Rated Power
Dissipation (mW)
500
400
300
200
100
0
0
25
50
thru
FIGURE 2
1N6320US
75
100
125
150
175
TEC , End cap temperature (C°)
POWER DERATING CURVE
1000
500
400
300
200
ZENER IMPEDANCE Z
ZT
(OHMS)
100
50
40
30
20
10
5
4
3
2
1
.1
.2
.5
1
2
5
10
20
50
100
OPERATING CURRENT I
ZT
(mA)
3.3 VOLT
5.1 VOLT
6.2 VOLT
FIGURE 3
ZENER IMPEDANCE VS. OPERATING CURRENT
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00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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