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JANS2N3866UB

RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, ROHS COMPLIANT, UB-3 PIN

器件类别：分立半导体    晶体管   

厂商名称：Microsemi

厂商官网：https://www.microsemi.com

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器件：JANS2N3866UB

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器件参数
参数名称
属性值
包装说明
SMALL OUTLINE, R-CDSO-N3
针数
3
Reach Compliance Code
compli
ECCN代码
EAR99
最大集电极电流 (IC)
0.4 A
基于收集器的最大容量
3.5 pF
集电极-发射极最大电压
30 V
配置
SINGLE
最高频带
ULTRA HIGH FREQUENCY BAND
JESD-30 代码
R-CDSO-N3
元件数量
1
端子数量
3
封装主体材料
CERAMIC, METAL-SEALED COFIRED
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
极性/信道类型
NPN
认证状态
Not Qualified
参考标准
MIL-19500/398
表面贴装
YES
端子形式
NO LEAD
端子位置
DUAL
晶体管应用
AMPLIFIER
晶体管元件材料
SILICON
Base Number Matches
1
文档预览
2N3866(A)UB
Qualified Levels:
JAN, JANTX, JANTXV
and JANS
Compliant
NPN Silicon High-Frequency Transistor
Qualified per MIL-PRF-19500/398
DESCRIPTION
This 2N3866(A) silicon VHF-UHF amplifier transistor is military qualified up to the JANS level
for high-reliability applications. It is also available in a top hat leaded TO-205AD package.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
•
•
•
JEDEC registered 2N3866 number
JAN, JANTX, JANTXV and JANS qualifications also available per MIL-PRF-19500/398
RoHS compliant
UB Package
APPLICATIONS / BENEFITS
•
•
•
Ceramic UB package
Lightweight
Military and other high-reliability applications
Also available in:
TO-205AD (TO-39)
package
(leaded)
2N3866(A)
MAXIMUM RATINGS
@ T
A
= +25 °C unless otherwise noted
Parameters / Test Conditions
Junction & Storage Temperature
Thermal Resistance Junction-to-Case
Thermal Resistance Junction-to-Ambient
Collector – Emitter Voltage
Collector – Base Voltage
Emitter - Base Voltage
(1)
(1)
Total Power Dissipation
@ T
A
= +25 ºC
Collector Current
Notes:
1. Derated linearly 3.08 mW/°C for T
A
> +25 °C
Symbol
T
J
, T
stg
R
ӨJC
R
ӨJA
V
CEO
V
CBO
V
EBO
P
T
I
C
Value
-65 to +200
60
325
30
60
3.5
0.5
0.4
Unit
°C
ºC/W
ºC/W
V
V
V
W
A
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0175-1, Rev. 1 (8/30/13)
©2013 Microsemi Corporation
Page 1 of 4
2N3866(A)UB
MECHANICAL and PACKAGING
•
•
•
•
•
•
CASE: Ceramic.
TERMINALS: Gold plating over nickel under plate.
MARKING: Part number, date code, manufacturer’s ID.
TAPE & REEL option: Standard per EIA-418D. Consult factory for quantities.
WEIGHT: Less than 0.04 grams.
See
Package Dimensions
on last page.
PART NOMENCLATURE
JAN
Reliability Level
JAN = JAN level
JANTX = JANTX level
JANTXV = JANTXV level
JANS = JANS level
Blank = Commercial
2N3866
(A)
UB
Surface Mount package
Forward Current Transfer
Ratio selection option
JEDEC type number
Symbol
I
B
I
C
V
BE
V
CB
V
CBO
V
CE
V
CEO
V
CC
V
EBO
SYMBOLS & DEFINITIONS
Definition
Base current: The value of the dc current into the base terminal.
Collector current: The value of the dc current into the collector terminal.
Base-emitter voltage: The dc voltage between the base and the emitter.
Collector-base voltage: The dc voltage between the collector and the base.
Collector-base voltage, base open: The voltage between the collector and base terminals when the emitter terminal is
open-circuited.
Collector-emitter voltage: The dc voltage between the collector and the emitter.
Collector-emitter voltage, base open: The voltage between the collector and the emitter terminals when the base
terminal is open-circuited.
Collector-supply voltage: The supply voltage applied to a circuit connected to the collector.
Emitter-base voltage, collector open: The voltage between the emitter and base terminals with the collector terminal
open-circuited.
T4-LDS-0175-1, Rev. 1 (8/30/13)
©2013 Microsemi Corporation
Page 2 of 4
2N3866(A)UB
ELECTRICAL CHARACTERISTICS
@ T
A
= +25 °C, unless otherwise noted
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 5 mA
Collector-Base Breakdown Voltage
I
C
= 100
µA
Emitter-Base Breakdown Voltage
I
E
= 100
µA
Collector-Emitter Cutoff Current
V
CE
= 28 V
Collector-Emitter Cutoff Current
V
CE
= 55 V
ON CHARACTERISTICS
(1)
Forward-Current Transfer Ratio
I
C
= 50 mA, V
CE
= 5.0 V
I
C
= 360 mA, V
CE
= 5.0 V
Symbol
Min
Max
Unit
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEO
I
CES1
30
60
3.5
20
100
V
V
V
µA
µA
2N3866UB
2N3866AUB
2N3866UB
2N3866AUB
h
FE
15
25
5
8
200
200
Collector-Emitter Saturation Voltage
I
C
= 100 mA, I
B
= 10 mA
Collector-Emitter Cutoff Current – High Temp Operation
V
CE
= 55 V,
T
A
= +150
ºC
Forward-Current Transfer Ratio –
2N3866UB
Low Temperature Operation
2N3866AUB
V
CE
= 5.0 V, I
C
= 50 mA,
T
A
= -55
ºC
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-
Signal Short-Circuit Forward Current
2N3866UB
Transfer Ratio
2N3866AUB
I
C
= 50 mA, V
CE
= 15 V, f = 200 MHz
Output Capacitance
V
CB
= 28 V, I
E
= 0, 100 kHz ≤ f ≤ 1.0 MHz
POWER OUTPUT CHARACTERISTICS
Power Output
V
CC
= 28 V; P
in
= 0.15 W; f = 400 MHz *
V
CC
= 28 V; P
in
= 0.075 W; f = 400 MHz *
* See Figure 4 on MIL-PRF-19500/398
Collector Efficiency
V
CC
= 28 V; P
in
= 0.15 W; f = 400 MHz
V
CC
= 28 V; P
in
= 0.075 W; f = 400 MHz
Clamp Inductive
Collector-Emitter Breakdown Voltage
V
BE
= -1.5 V, I
C
= 40 mA
(1) Pulse Test: pulse width = 300
µs,
duty cycle
≤
2.0%
V
CE(sat)
I
CES2
h
FE3
7
12
1.0
2.0
V
mA
|h
FE
|
2.5
4.0
8.0
7.5
3.5
pF
C
obo
P
1out
P
2out
n1
n2
V
(BR)CEX
1.0
0.5
45
40
55
2.0
W
%
Vdc
T4-LDS-0175-1, Rev. 1 (8/30/13)
©2013 Microsemi Corporation
Page 3 of 4
2N3866(A)UB
PACKAGE DIMENSIONS
Symbol
BH
BL
BW
CL
CW
LL1
LL2
Dimensions
inch
millimeters
Min
Max
Min
Max
0.046
0.056
1.17
1.42
0.115
0.128
2.92
3.25
0.085
0.108
2.16
2.74
-
0.128
-
3.25
-
0.108
-
2.74
0.022
0.038
0.56
0.96
0.017
0.035
0.43
0.89
Note
Symbol
LS1
LS2
LW
r
r1
r2
Dimensions
inch
millimeters
Min
Max
Min
Max
0.035
0.040
0.89
1.02
0.071
0.079
1.80
2.01
0.016
0.024
0.41
0.61
-
0.008
-
0.20
-
0.012
-
0.31
-
0.022
-
0.56
Note
NOTES:
1. Dimensions are in inches. Millimeters are given for information only.
2. Hatched areas on package denote metallized areas.
3. Lid material: Kovar.
4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid.
5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
T4-LDS-0175-1, Rev. 1 (8/30/13)
©2013 Microsemi Corporation
Page 4 of 4
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参数对比
与JANS2N3866UB相近的元器件有：JANTX2N3866AUB、JANS2N3866AUB、JAN2N3866AUB、JANTX2N3866UB、JAN2N3866UB、JANTXV2N3866UB。描述及对比如下：
型号 JANS2N3866UB JANTX2N3866AUB JANS2N3866AUB JAN2N3866AUB JANTX2N3866UB JAN2N3866UB JANTXV2N3866UB
描述 RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, ROHS COMPLIANT, UB-3 PIN RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, ROHS COMPLIANT, UB-3 PIN RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, ROHS COMPLIANT, UB-3 PIN RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, ROHS COMPLIANT, UB-3 PIN RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, ROHS COMPLIANT, UB-3 PIN RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, ROHS COMPLIANT, UB-3 PIN RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, ROHS COMPLIANT, UB-3 PIN
包装说明 SMALL OUTLINE, R-CDSO-N3 SMALL OUTLINE, R-CDSO-N3 SMALL OUTLINE, R-CDSO-N3 SMALL OUTLINE, R-CDSO-N3 SMALL OUTLINE, R-CDSO-N3 SMALL OUTLINE, R-CDSO-N3 SMALL OUTLINE, R-CDSO-N3
针数 3 3 3 3 3 3 3
Reach Compliance Code compli compli compli compli compli compli compli
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
最大集电极电流 (IC) 0.4 A 0.4 A 0.4 A 0.4 A 0.4 A 0.4 A 0.4 A
基于收集器的最大容量 3.5 pF 3.5 pF 3.5 pF 3.5 pF 3.5 pF 3.5 pF 3.5 pF
集电极-发射极最大电压 30 V 30 V 30 V 30 V 30 V 30 V 30 V
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
最高频带 ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 代码 R-CDSO-N3 R-CDSO-N3 R-CDSO-N3 R-CDSO-N3 R-CDSO-N3 R-CDSO-N3 R-CDSO-N3
元件数量 1 1 1 1 1 1 1
端子数量 3 3 3 3 3 3 3
封装主体材料 CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 NPN NPN NPN NPN NPN NPN NPN
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
参考标准 MIL-19500/398 MIL-19500/398 MIL-19500/398 MIL-19500/398 MIL-19500/398 MIL-19500/398 MIL-19500/398
表面贴装 YES YES YES YES YES YES YES
端子形式 NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL
晶体管应用 AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 1 1 1 1
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器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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