The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 7 December 2001.
INCH-POUND
MIL-PRF-19500/543F
7 September 2001
SUPERSEDING
MIL-PRF-19500/543E
5 August 1997
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON
REPETITIVE AVALANCHE TYPES 2N6764, 2N6766, 2N6768, 2N6770,
JAN, JANTX, JANTXV, JANS, JANHC and JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for N-channel, enhancement-mode,
MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as
specified in MIL-PRF-19500 and two levels of product assurance for each unencapsulated die, with avalanche
energy ratings (EAS and EAR) and maximum avalanche current (IAR).
1.2 Physical dimensions. See figure 1 (TO-204AE for types 2N6764 and 2N6766; TO-204AA for types 2N6768
and 2N6770 (formerly TO-3)), see figures 2 and 3 for JANHC and JANKC (die) dimensions.
1.3 Maximum ratings.
(TA = +25
°
C, unless otherwise specified).
PT
TC = +25° C
W
4
4
4
4
VDS
V dc
100
200
400
500
VDG
V dc
100
200
400
500
VGS
V dc
±
±
±
±
20
20
20
20
ID1 (2)
TC = +25° C
A dc
38.0
30.0
14.0
12.0
IS
A dc
38.0
30.0
14.0
12.0
ID2 (2)
TC = +100° C
A dc
24.0
19.0
9.0
7.75
Type
PT (1)
TC = +25° C
W
2N6764
2N6766
2N6768
2N6770
150
150
150
150
Type
IDM
(3)
EAS
EAR
IAR
VISO
70,000
ft.
attitude
TSTG
and
TOP
Max rDS(on) (1);
VGS = 10 V dc
ID = ID2
TJ = +25° C
Ω
0.055
0.085
0.300
0.400
TJ = +150° C
Ω
0.105
0.170
0.750
1.000
R
θJC
max
A pk
2N6764
2N6766
2N6768
2N6770
152
120
56
48
A
150
500
700
750
mJ
15
15
15
15
mJ
38.0
30.0
14.0
12.0
400
500
°C
-55
to
+150
°C/W
0.83
0.83
0.83
0.83
See notes on next page.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC,
Post Office Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement
Proposal (DD Form 1426) appearing at the end of this document or by letter.
AMSC/NA
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961
MIL-PRF-19500/543F
1.3 Maximum ratings - Continued.
(1) Derate linearly, 1.2 W/°C for TC > +25
°
C
.
PT = TJ max - TC.
RθJC
(2)
I
D
=
.
.
T
J
max
- T
C
at T
J
max
R
θ
JC
+ R
DS(on)
(3) IDM = 4 x ID1 as calculated in note 2.
1.4 Primary electrical characteristics at T
C
= +25°C.
Min V
(BR)DSS
V
GS
= 0V
I
D
= 1 mA dc
Vdc
2N6764
2N6766
2N6768
2N6770
100
200
400
500
A
38.0
30.0
14.0
12.0
mJ
150
500
700
750
mJ
15.0
15.0
15.0
15.0
I
AR
(1)
E
AS
E
AR
Max r
DS(on)
V
GS
= 10 Vdc
I
D
= ID2
Ω
0.055
0.085
0.3
0.4
V
GSth1
V
DS
≥
V
GS
I
D
= 0.25 mA
min max
2.0
2.0
2.0
2.0
4.0
4.0
4.0
4.0
Max I
DSS1
VGS = 0 V
V
DS
= 80 percent
of rated V
DS
µAdc
25
25
25
25
Type
(1) Pulsed (see 4.5.1).
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards and handbooks. The following specifications, standards and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and
supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
STANDARD
DEPARTMENT OF DEFENSE
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from
the Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue,
Philadelphia, PA 19111-5094.)
2
MIL-PRF-19500/543F
FIGURE 1.
Physical dimensions of transistor types 2N6764 and 2N6766, TO-204AE;
for types 2N6768 and 2N6770, TO-204AA.
3
MIL-PRF-19500/543F
Dimensions
Ltr
Min
CD
CH
HR
HR
1
HT
LD
.250
.495
.131
.060
.057
.038
LL
L
1
MHD
MHS
PS
PS
1
s
.151
1.177
.420
.205
.655
.312
Inches
Max
.875
.360
.525
.188
.135
.063
.043
.500
.050
.161
1.197
.440
.225
.675
3.84
29.90
10.67
5.21
16.64
6.35
12.57
3.33
1.52
1.45
0.97
7.92
Millimeter
Min
Max
22.23
9.15
13.3
4.78
3.43
1.60
1.10
12.70
1.27
4.09
30.04
11.18
5.72
17.15
3
7
5
6
Notes
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. These dimensions shall be measured at points .050 inch (1.27 mm) and .055 inch (1.40
mm) below the seating plane. When gauge is not used, measurement will be made at the
seating plane.
4. The seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch
(0.10 mm) convex inside a .930 inch (23.62 mm) diameter circle on the center of the header
and flat within .001 inch (0.03 mm) concave to .006 inch (0.15 mm) convex overall.
5. These dimensions pertain to the 2N6764 and 2N6766 types.
6. These dimensions pertain to the 2N6768 and 2N6770 types.
7. Mounting holes shall be deburred on the seating plane side.
8. Drain is electrically connected to the case.
FIGURE 1.
Physical dimensions of transistor types 2N6764 and 2N6766 TO-204AE;
for types 2N6768 and 2N6770, TO-204AA - Continued.
4
MIL-PRF-19500/543F
Dimensions 2N6764 and 2N6766
Ltr
Inches
Min
A
B
C
D
E
F
.252
.252
.027
.012
.057
.013
Max
.262
.262
.037
.022
.067
.023
Millimeters
Min
6.40
6.40
0.69
0.30
1.45
0.33
Max
6.65
6.65
0.94
0.56
1.70
0.58
Dimensions 2N6768 and 2N6770
Inches
Min
.252
.252
.025
.043
.032
.015
Max
.262
.262
.035
.053
.042
.025
Millimeters
Min
6.40
6.40
0.64
1.09
0.81
0.38
Max
6.65
6.65
0.89
1.35
1.07
0.64
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Unless otherwise specified, tolerance is ± .005 inch (0.13 mm).
4. The physical characteristics of the die thickness are .0187 inch (0.474 mm). The back metals are
chromium, nickel and silver. The top metal is aluminum and the back contact is the drain.
FIGURE 2. JANHC and JANKC A-version die dimensions.
5
