TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
PNP SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/357
DEVICES
LEVELS
2N3634
2N3634L
2N3634UB
2N3635
2N3635L
2N3635UB
2N3636
2N3636L
2N3636UB
2N3637
2N3637L
2N3637UB
JANSM – 3K Rads (Si)
JANSD – 10K Rads (Si)
JANSP – 30K Rads (Si)
JANSL – 50K Rads (Si)
JANSR – 100K Rads (Si)
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
UB:
@ T
A
= +25°C
@ T
C
= +25°C
@ T
C
= +25°C
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
**
T
J
, T
stg
2N3634* 2N3636*
2N3635* 2N3637*
140
140
5.0
1.0
1.0
5.0
1.5
-65 to +200
175
175
5.0
1.0
Unit
Vdc
Vdc
Vdc
Adc
W
W
W
°C
TO-5*
2N3634L, 2N3635L
2N3636L, 2N3637L
Operating & Storage Junction Temperature Range
* Electrical characteristics for “L” suffix devices are identical to the “non L”
corresponding devices.
** Consult 19500/357 for De-Rating curves.
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
C
= 10mAdc
2N3634, 2N3635
2N3636, 2N3637
Collector-Base Cutoff Current
V
CB
= 100Vdc
V
CB
= 140Vdc
V
CB
= 175Vdc
Emitter-Base Cutoff Current
V
EB
= 3.0Vdc
V
EB
= 5.0Vdc
Collector-Emitter cutoff Current
V
CE
= 100Vdc
V
(BR)CEO
140
175
100
10
10
50
10
10
Vdc
Symbol
Min.
Max.
Unit
TO-39* (TO-205AD)
2N3634, 2N3635
2N3636, 2N3637
2N3634, 2N3635
2N3636, 2N3637
I
CBO
ηAdc
μAdc
μAdc
ηAdc
μAdc
μAdc
I
EBO
I
CEO
3 PIN
2N3634UB, 2N3635UB
2N3636UB, 2N3637UB
T4-LDS-0065 Rev. 1 (081247)
Page 1 of 3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
PNP SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/357
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
ON CHARACTERISTICS
(1)
Forward-Current Transfer Ratio
I
C
= 0.1mAdc, V
CE
= 10Vdc
I
C
= 1.0mAdc, V
CE
= 10Vdc
I
C
= 10mAdc, V
CE
= 10Vdc
I
C
= 50mAdc, V
CE
= 10Vdc
I
C
= 150mAdc, V
CE
= 10Vdc
I
C
= 0.1mAdc, V
CE
= 10Vdc
I
C
= 1.0mAdc, V
CE
= 10Vdc
I
C
= 10mAdc, V
CE
= 10Vdc
I
C
= 50mAdc, V
CE
= 10Vdc
I
C
= 150mAdc, V
CE
= 10Vdc
Collector-Emitter Saturation Voltage
I
C
= 10mAdc, I
B
= 1.0mAdc
I
C
= 50mAdc, I
B
= 5.0mAdc
Base-Emitter Saturation Voltage
I
C
= 10mAdc, I
B
= 1.0mAdc
I
C
= 50mAdc, I
B
= 5.0mAdc
2N3634, 2N3636
25
45
50
50
30
h
FE
2N3635, 2N3637
55
90
100
100
60
Symbol
Min.
Max.
Unit
150
300
V
CE(sat)
0.3
0.6
Vdc
V
BE(sat)
0.65
0.8
0.9
Vdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
I
C
= 30mAdc, V
CE
= 30Vdc, f = 100MHz
Forward Current Transfer Ratio
I
C
= 10mAdc, V
CE
= 10Vdc, f = 1.0kHz
Small-Signal Short-Circuit Input Impedance
I
C
= 10mAdc, V
CE
= 10Vdc, f = 1.0kHz
Small-Signal Open-Circuit Input Impedance
I
C
= 10mAdc, V
CE
= 10Vdc, f = 1.0kHz
Output Capacitance
V
CB
= 20Vdc, I
E
= 0, 100 kHz
≤
f
≤
1.0MHz
Input Capacitance
V
EB
= 1.0Vdc, I
C
= 0, 100 kHz
≤
f
≤
1.0MHz
Noise Figure
V
CE
= 10Vdc, I
C
= 0.5mAdc, R
g
= 1.0kΩ
2N3634, 2N3636
2N3635, 2N3637
|h
fe
|
1.5
2.0
8.0
8.5
2N3634, 2N3636
2N3635, 2N3637
2N3634, 2N3636
2N3635, 2N3637
h
fe
40
80
100
200
160
320
600
1200
200
Ω
h
ie
h
oe
μs
C
obo
10
pF
C
ibo
75
pF
f = 100Hz
f = 1.0kHz
f = 10kHz
NF
5.0
3.0
3.0
dB
(1) Pulse Test: Pulse Width = 300μs, Duty Cycle
≤
2.0%
T4-LDS-0065 Rev. 1 (081247)
Page 2 of 3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
PNP SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/357
SAFE OPERATING AREA
DC Tests
T
C
= 25°C, 1 Cycle, t = 1.0s
Test 1
V
CE
= 100Vdc, I
C
= 30mAdc
V
CE
= 130Vdc, I
C
= 20mAdc
Test 2
V
CE
= 50Vdc, I
C
= 95mAdc
Test 3
V
CE
= 5.0Vdc, I
C
= 1.0Adc
2N3634, 2N3635
2N3636, 2N3637
T4-LDS-0065 Rev. 1 (081247)
Page 3 of 3
