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JANSM2N7382

Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN

器件类别：分立半导体    晶体管   

厂商名称：Microsemi

厂商官网：https://www.microsemi.com

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参数 预览 参数对比
器件参数
参数名称
属性值
Objectid
2053606721
零件包装代码
TO-257AA
包装说明
TO-257AA, 3 PIN
针数
3
Reach Compliance Code
compliant
ECCN代码
EAR99
外壳连接
ISOLATED
配置
SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压
100 V
最大漏极电流 (ID)
11 A
最大漏源导通电阻
0.35 Ω
FET 技术
METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码
TO-257AA
JESD-30 代码
R-XSFM-P3
元件数量
1
端子数量
3
工作模式
ENHANCEMENT MODE
封装主体材料
UNSPECIFIED
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
极性/信道类型
P-CHANNEL
认证状态
Qualified
参考标准
MIL-19500/615
表面贴装
NO
端子形式
PIN/PEG
端子位置
SINGLE
晶体管元件材料
SILICON
文档预览
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED P-CHANNEL MOSFET
Qualified per MIL-PRF-19500/615
DEVICES
LEVELS
2N7382
JANSM (3K RAD(Si))
JANSD (10K RAD(Si))
JANSR(100K RAD(Si))
JANSF(300K RAD(Si))
Symbol
V
DS
V
GS
T
C
= +25°C
I
D1
I
D2
P
tl
R
ds(on)
T
op
, T
stg
Value
-100
± 20
-11.0
-7.0
75
(1)
0.3
(2)
-55 to +150
Unit
Vdc
Vdc
Adc
Adc
W
Ω
°C
TO-257AA
JANSM2N7382, JANSD2N7382,
JANSR2N7382, JANSF2N7382
See Figure 1
ABSOLUTE MAXIMUM RATINGS (T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current
Continuous Drain Current
T
C
= +100°C
Max. Power Dissipation
Drain to Source On State Resistance
Operating & Storage Temperature
Note:
(1) Derated Linearly by 0.6 W/°C for T
C
> +25°C
(2) V
GS
= -12Vdc, I
D
= -7.0A
PRE-IRRADIATION ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise
noted)
Parameters / Test Conditions
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= -1mAdc
Gate-Source Voltage (Threshold)
V
DS
≥
V
GS
, I
D
= -1.0mA
V
DS
≥
V
GS
, I
D
= -1.0mA, T
j
= +125°C
V
DS
≥
V
GS
, I
D
= -1.0mA, T
j
= -55°C
Gate Current
V
GS
= ±20V, V
DS
= 0V
V
GS
= ±20V, V
DS
= 0V, T
j
= +125°C
Drain Current
V
GS
= 0V, V
DS
= -80V
V
GS
= 0V, V
DS
= -80V, T
j
= +125°C
Static Drain-Source On-State Resistance
V
GS
= -12V, I
D
= -7.0A pulsed
V
GS
= -12V, I
D
= -11.0A pulsed
T
j
= -125°C
V
GS
= -12V, I
D
= -7.0A pulsed
Diode Forward Voltage
V
GS
= 0V, I
D
= -11.0A pulsed
T4-LDS-0125 Rev. 1 (091145)
Symbol
V
(BR)DSS
V
GS(th)1
V
GS(th)2
V
GS(th)3
I
GSS1
I
GSS2
I
DSS1
I
DSS2
r
DS(on)1
r
DS(on)2
r
DS(on)3
V
SD
Min.
-100
-2.0
-1.0
-4.0
-5.0
±100
±200
Max.
Unit
Vdc
Vdc
nAdc
-25
-0.25
0.3
0.35
0.54
-3.0
µAdc
mAdc
Ω
Ω
Ω
Vdc
Page 1 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED P-CHANNEL MOSFET
Qualified per MIL-PRF-19500/615
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Gate Charge:
On-State Gate Charge
Gate to Source Charge
Gate to Drain Charge
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Switching time tests:
Turn-on delay time
Rinse time
Turn-off delay time
Fall time
Diode Reverse Recovery Time
I
D
= -11.0A, V
GS
= -12Vdc,
Gate drive impedance = 7.5Ω,
V
DD
= -50Vdc
di/dt
≤
-100A/µs, V
DD
≤
-50V,
I
F
= -11.0A
Symbol
t
d(on)
t
r
t
d(off)
t
f
t
rr
Min.
Max.
30
50
70
70
250
Unit
Symbol
Q
g(on)
Q
gs
Q
gd
Min.
Max.
45
10
25
Unit
nC
V
GS
= -12V, I
D
= -11.0A
V
DS
= -50V
ns
ns
POST-IRRADIATION ELECTRICAL CHARACTERISTICS (3)
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= -1mAdc
Gate-Source Voltage (Threshold)
V
DS
≥
V
GS
, I
D
= -1.0mA JANSR
V
DS
≥
V
GS
, I
D
= -1.0mA JANSF
Gate Current
V
GS
= ±20V, V
DS
= 0V
Drain Current
V
GS
= 0V, V
DS
= -80V
Static Drain-Source On-State Resistance
V
GS
= -12V, I
D
= -7.0A pulsed
Symbol
V
(BR)DSS
Min.
-100
Max.
Unit
Vdc
V
GS(th)1
V
GS(th)1
I
GSS1
-2.0
-2.0
-4.0
-5.0
±100
Vdc
nAdc
I
DSS1
-25
µAdc
r
DS(on)
0.30
Ω
Diode Forward Voltage
V
GS
= 0V, I
D
= -11.0A pulsed
V
SD
-3.0
Vdc
Note:
(3) Post-Irradiation Electrical Characteristics apply to devices subjected to Steady State Total Dose Irradiation testing in
accordance with MIL-STD-750 Method 1019. Separate samples are tested for VGS bias (12V), and VDS bias (80V)
conditions.
T4-LDS-0125 Rev. 1 (091145)
Page 2 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED P-CHANNEL MOSFET
Qualified per MIL-PRF-19500/615
Single Event Effect (SEE) Characteristics:
Heavy Ion testing of the 2N7382 device was completed by similarity of die structure to the 2N7389. The
2N7389 has been characterized at the Texas A&M cyclotron. The following SOA curve has been established using the
elements, LET, range, and Total Energy conditions as shown:
2N7382
-110
-100
-90
-80
Drain Bias, V
-70
-60
-50
-40
-30
-20
-10
0
0
5
10
15
Gate Bias, V
20
25
TAMU Kr
LET = 26.8
Range=170um
Total Energy=1121MeV
TAMU Ag
LET = 40.6
Range=150um
Total Energy=1426MeV
TAMU Au
LET=80.2
Range=155um
Total Energy=1884MeV
TAMU Ar
LET = 8.1
Range=230um
Total Energy=558MeV
It should be noted that total energy levels are considered to be a factor in SEE
characterization. Comparisons to other datasets should not be based on LET alone. Please consult
factory for more information.
T4-LDS-0125 Rev. 1 (091145)
Page 3 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED P-CHANNEL MOSFET
Qualified per MIL-PRF-19500/615
Figure 1: Case Outline and Pin Configuration for JANSM2N7382, JANSD2N7382,
JANSR2N7382 & JANSF2N7382
T4-LDS-0125 Rev. 1 (091145)
Page 4 of 4
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参数对比
与JANSM2N7382相近的元器件有：JANSF2N7382、JANSR2N7382、JANSD2N7382、2N7382。描述及对比如下：
型号 JANSM2N7382 JANSF2N7382 JANSR2N7382 JANSD2N7382 2N7382
描述 Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN
Objectid 2053606721 1814919284 2053606725 2053606717 2053606697
零件包装代码 TO-257AA TO-257AA TO-257AA TO-257AA TO-257AA
包装说明 TO-257AA, 3 PIN TO-257AA, 3 PIN FLANGE MOUNT, R-XSFM-P3 FLANGE MOUNT, R-XSFM-P3 FLANGE MOUNT, R-XSFM-P3
针数 3 3 3 3 3
Reach Compliance Code compliant unknown compliant compliant unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99
外壳连接 ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
配置 SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压 100 V 100 V 100 V 100 V 100 V
最大漏极电流 (ID) 11 A 11 A 11 A 11 A 11 A
最大漏源导通电阻 0.35 Ω 0.35 Ω 0.35 Ω 0.35 Ω 0.35 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码 TO-257AA TO-257AA TO-257AA TO-257AA TO-257AA
JESD-30 代码 R-XSFM-P3 R-XSFM-P3 R-XSFM-P3 R-XSFM-P3 R-XSFM-P3
元件数量 1 1 1 1 1
端子数量 3 3 3 3 3
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
封装主体材料 UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
极性/信道类型 P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL
认证状态 Qualified Qualified Qualified Qualified Not Qualified
表面贴装 NO NO NO NO NO
端子形式 PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON
参考标准 MIL-19500/615 MIL-19500/615 MIL-19500/615 MIL-19500/615 -
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器件捷径:
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ
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