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JANSR2N2907AUA

TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

器件类别:分立半导体    晶体管   

厂商名称:Defense Supply Center Columbus

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器件参数
参数名称
属性值
厂商名称
Defense Supply Center Columbus
包装说明
SMALL OUTLINE, R-XDSO-N4
Reach Compliance Code
unknown
JESD-30 代码
R-XDSO-N4
端子数量
4
封装主体材料
UNSPECIFIED
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
认证状态
Qualified
表面贴装
YES
端子形式
NO LEAD
端子位置
DUAL
文档预览
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
PNP SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/291
DEVICES
LEVELS
2N2906A
2N2906AL
2N2906AUA
2N2906AUB
2N2906AUBC
2N2907A
2N2907AL
2N2907AUA
2N2907AUB
2N2907AUBC
JANSM – 3K Rads (Si)
JANSD – 10K Rads (Si)
JANSP – 30K Rads (Si)
JANSL – 50K Rads (Si)
JANSR – 100K Rads (Si)
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ T
A
= +25°C
Operating & Storage Junction Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T (1)
T
op
, T
stg
Value
60
60
5.0
600
0.5
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
W
°C
TO-18 (TO-206AA)
2N2906A, 2N2907A
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Thermal Resistance, Junction-to-Ambient
1. See MIL-PRF-19500/291 for derating curves.
Symbol
R
θJA
(1)
Max.
325
Unit
°C/W
4 PIN
2N2906AUA, 2N2907AUA
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 10mAdc
Collector-Base Cutoff Current
V
CB
= 60Vdc
V
CB
= 50Vdc
Emitter-Base Cutoff Current
V
EB
= 5.0Vdc
V
EB
= 4.0Vdc
Collector-Emitter Cutoff Current
V
CE
= 50Vdc
I
EBO
10
50
50
μAdc
ηAdc
ηAdc
I
CBO
10
10
μAdc
ηAdc
V
(BR)CEO
60
Vdc
Symbol
Min.
Max.
Unit
3 PIN
2N2906AUB, 2N2907AUB
2N2906AUBC, 2N2907AUBC
(UBC = Ceramic Lid Version)
I
CES
T4-LDS-0055 Rev. 3 (080857)
Page 1 of 2
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
PNP SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/291
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
ON CHARACTERISTICS
(2)
Forward-Current Transfer Ratio
I
C
= 0.1mAdc, V
CE
= 10Vdc
2N2906A, L, UA, UB, UBC
2N2907A, L, UA, UB, UBC
2N2906A, L, UA, UB, UBC
2N2907A, L, UA, UB, UBC
2N2906A, L, UA, UB, UBC
2N2907A, L, UA, UB, UBC
2N2906A, L, UA, UB, UBC
2N2907A, L, UA, UB, UBC
2N2906A, L, UA, UB, UBC
2N2907A, L, UA, UB, UBC
V
CE(sat)
h
FE
40
75
40
100
40
100
40
100
40
50
0.4
1.6
0.6
1.3
2.6
Max.
Vdc
120
300
175
450
Symbol
Min.
Max.
Unit
I
C
= 1.0mAdc, V
CE
= 10Vdc
I
C
= 10mAdc, V
CE
= 10Vdc
I
C
= 150mAdc, V
CE
= 10Vdc
I
C
= 500mAdc, V
CE
= 10Vdc
Collector-Emitter Saturation Voltage
I
C
= 150mAdc, I
B
= 15mAdc
I
C
= 500mAdc, I
B
= 50mAdc
Base-Emitter Voltage
I
C
= 150mAdc, I
B
= 15mAdc
I
C
= 500mAdc, I
B
= 50mAdc
V
BE(sat)
Vdc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Small-Signal Short-Circuit Forward Current Transfer Ratio
I
C
= 1.0mAdc, V
CE
= 10Vdc, f = 1.0kHz
2N2906A, L, UA, UB, UBC
2N2907A, L, UA, UB, UBC
Magnitude of Small–Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= 20mAdc, V
CE
= 20Vdc, f = 100MHz
Output Capacitance
V
CB
= 10Vdc, I
E
= 0, 100kHz
f
1.0MHz
Input Capacitance
V
EB
= 2.0Vdc, I
C
= 0, 100kHz
f
1.0MHz
Symbol
h
fe
Min.
40
100
Unit
|h
fe
|
C
obo
C
ibo
2.0
8.0
30
pF
pF
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-On Time
See MIL-PRF-19500/291
Turn-Off Time
See MIL-PRF-19500/291
(2) Pulse Test: Pulse Width = 300μs, Duty Cycle
2.0%.
T4-LDS-0055 Rev. 3 (080857)
Page 2 of 2
Symbol
t
on
t
off
Min.
Max.
45
300
Unit
ηs
ηs
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