2N2944A – 2N2946A
PNP Silicon Small Signal Transistor
Available on
commercial
versions
Qualified per MIL-PRF-19500/382
DESCRIPTION
Qualified Levels:
JAN, JANTX, and
JANTXV
This 2N2944A through 2N2946A PNP silicon transistor device is military qualified up to a
JANTXV level for high-reliability applications. Microsemi also offers numerous other products
to meet higher and lower power voltage regulation applications.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
•
•
•
JEDEC registered 2N2944A thru 2N2946A series.
JAN, JANTX, and JANTXV qualifications per MIL-PRF-19500/382 available.
RoHS compliant versions available (commercial grade only).
TO-46
(TO-206AB)
Package
APPLICATIONS / BENEFITS
•
•
Low profile metal can package.
ESD to Class 3 per MIL-STD-750, method 1020.
Also available in:
UB package
(surface mount)
2N2944AUB – 2N2946AUB
MAXIMUM RATINGS
@ +25 C unless specified otherwise.
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance Junction-to-Ambient
Collector Current (dc)
Emitter to Base voltage (static),
collector open
Symbol
T
J
and T
STG
R
ӨJA
I
C
V
EBO
Value
-65 to +200
435
-100
-15
-25
-40
-15
-25
-40
-10
-20
-35
-10
-20
-35
400
Unit
o
o
2N2944A
2N2945A
2N2946A
Collector to Base voltage (static),
2N2944A
emitter open
2N2945A
2N2946A
Collector to Emitter voltage (static),
2N2944A
base open
2N2945A
2N2946A
Emitter to Collector voltage
2N2944A
2N2945A
2N2946A
o
(1)
Total Power Dissipation, all terminals @ T
A
= +25 C
Notes:
1. Derate linearly 2.30 mW /
o
C above T
A
= +25
o
C.
C
C/W
mA
V
o
V
CBO
V
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
V
CEO
V
V
ECO
V
P
T
mW
T4-LDS-0236, Rev. 1 (11960)
©2011 Microsemi Corporation
Page 1 of 5
2N2944A – 2N2946A
MECHANICAL and PACKAGING
•
•
•
•
•
CASE: Nickel plated kovar, glass seals.
TERMINALS: Gold plating over nickel, solder dipped, kovar.
MARKING: Part number, date code, manufacturer’s ID.
WEIGHT: 0.234 grams.
See
Package Dimensions
on last page.
PART NOMENCLATURE
JAN
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commercial
JEDEC type number
(see
Electrical Characteristics
table)
2N2944A (e3)
RoHS Compliance
e3 = RoHS Compliant (available
on commercial grade only)
Blank = non-RoHS Compliant
Symbol
I
B
I
E
V
CB
V
EB
V
(BR)
SYMBOLS & DEFINITIONS
Definition
Base current (dc).
Emitter current (dc).
Collector to base voltage (dc).
Emitter to base voltage (dc).
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
T4-LDS-0236, Rev. 1 (11960)
©2011 Microsemi Corporation
Page 2 of 5
2N2944A – 2N2946A
ELECTRICAL CHARACTERISTICS
@ 25 C unless otherwise noted.
Characteristic
Symbol
Min.
Max.
Unit
o
OFF CHARACTERISTICS:
Collector-Emitter Breakdown Voltage
I
C
= -10
µA
2N2944A
2N2945A
2N2946A
2N2944A
2N2945A
2N2946A
2N2944A
2N2945A
2N2946A
2N2944A
2N2945A
2N2946A
V(BR)CEO
-10
-20
-35
-10
-20
-35
10
10
10
-0.1
-0.2
-0.5
V
Emitter-Collector Breakdown Voltage
I
E
= -10
µA,
I
B
= 0
V(BR)ECO
V
Collector-Base Cutoff Current
V
CB
= -15 V
V
CB
= -25 V
V
CB
= -40 V
Emitter-Base Cutoff Current
V
EB
= -12 V
V
EB
= -20 V
V
EB
= -32 V
ICBO
µA
IEBO
ηA
ON CHARACTERISTICS:
(1)
Forward-Current Transfer Ratio
I
C
= -1.0 mA, V
CE
= -0.5 V
2N2944A
2N2945A
2N2946A
Forward-Current Transfer Ratio (inverted connection)
2N2944A
I
E
= -200
µA,
V
EC
= -0.5 V
2N2945A
2N2946A
Emitter-Collector Offset Voltage
I
B
= -200
µA,
I
E
= 0
2N2944A
2N2945A
2N2946A
2N2944A
I
B
= -1.0 mA, I
E
= 0
2N2945A
2N2946A
2N2944A
I
B
= -2.0 mA, I
E
= 0
2N2945A
2N2946A
hFE
100
70
50
50
30
20
-0.3
-0.5
-0.8
-0.6
-1.0
-2.0
-1.0
-1.6
-2.5
mV
hFE(inv)
VEC(ofs)
DYNAMIC CHARACTERISTICS:
Emitter-Collector On-State Resistance
I
B
= -100
µA
,
I
E
= 0, I
e
= 100
µA
ac
(
rms)
f = 1.0 kHz
I
B
= -1.0 mA, I
E
= 0, I
e
= 100
µA
ac (rms)
f =1.0 kHz
Magnitude of Small-Signal Forward
Current Transfer Ratio
I
C
= -1.0 mA, V
CE
= -6.0V, f = 1.0 MHz
Output Capacitance
V
CB
= -6.0 V, I
E
= 0, 100 kHz ≤ f ≤ 1.0 MHz
Input Capacitance
V
EB
= -6.0 V, I
C
= 0, 100 kHz ≤ f ≤ 1.0 MHz
(1) Pulse Test: Pulse Width = 300 s, duty cycle 2.0%.
2N2944A
2N2945A
2N2946A
2N2944A
2N2945A
2N2946A
2N2944A
2N2945A
2N2946A
rec(on)
10
12
14
4.0
6.0
8.0
15
10
5.0
55
55
55
10
6.0
Ω
|hfe|
Cobo
Cibo
pF
pF
T4-LDS-0236, Rev. 1 (11960)
©2011 Microsemi Corporation
Page 3 of 5
2N2944A – 2N2946A
GRAPHS
Maximum DC Operation Rating (mW )
T
A
(
C
) Ambient Temperature
o
FIGURE 1 –
Temperature-Power Derating Curve
T4-LDS-0236, Rev. 1 (11960)
©2011 Microsemi Corporation
Page 4 of 5
2N2944A – 2N2946A
PACKAGE DIMENSIONS
Ltr.
CD
CH
HD
LC
LD
LL
LU
L1
L2
Q
TL
TW
r
α
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.178
.195
4.52
4.95
.065
.085
1.65
2.16
.209
.230
5.31
5.84
.100 TP
2.54 TP
.016
.021
0.41
0.53
.500
1.750
12.70 44.45
.016
.019
0.41
0.48
.050
1.27
.250
6.35
.040
1.02
.028
.048
0.71
1.22
.036
.046
0.91
1.17
.010
0.25
45° TP
45° TP
Notes
5
6
6
6
6
3
8
4
9
5
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Symbol TL is measured from HD maximum.
4. Details of outline in this zone are optional.
5. Leads at gauge plane .054 inch (1.37 mm) +.001 inch (0.03 mm) -.000 inch (0.00 mm) below seating plane shall be within
.007 inch (0.18 mm) radius of TP relative to tab. Device may be measured by direct methods or by gauge.
6. Symbol LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum.
7. Lead number three is electrically connected to case.
8. Beyond r maximum, TW shall be held for a minimum length of .011 inch (0.28 mm).
9. Symbol r applied to both inside corners of tab.
10. In accordance with ASME Y14.5M, diameters are equivalent to
Φx
symbology.
11. Lead 1 is emitter, lead 2 is base, and lead 3 is collector.
T4-LDS-0236, Rev. 1 (11960)
©2011 Microsemi Corporation
Page 5 of 5
