2N3506L thru 2N3507AL
NPN MEDIUM POWER SILICON
TRANSISTOR
Qualified per MIL-PRF-19500/349
DESCRIPTION
This family of 2N3506L through 2N3507AL high-frequency, epitaxial planar transistors feature
low saturation voltage. These devices are also available in TO-5 and low profile U4
packaging. Microsemi also offers numerous other transistor products to meet higher and
lower power ratings with various switching speed requirements in both through-hole and
surface-mount packages.
Available on
commercial
versions
Qualified Levels:
JAN, JANTX and
JANTXV
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
•
•
•
•
•
JEDEC registered 2N3506 through 2N3507 series.
RoHS compliant versions available (commercial grade only).
V
CE(sat)
= 0.5 V @ I
C
= 500 mA.
Rise time t
r
= 30 ns max @ I
C
= 1.5 A, I
B1
= 150 mA.
Fall time t
f
= 35 ns max @ I
C
= 1.5 A, I
B1
= I
B2
= 150 mA.
TO-5 Package
Also available in:
TO-39
(TO-205-AD)
package
(leaded)
2N3506 – 2N3507A
APPLICATIONS / BENEFITS
•
•
General purpose transistors for medium power applications requiring high frequency switching and
low package profile.
Military and other high-reliability applications.
U4 package
(surface mount)
2N3506U4 – 2N3507AU4
MAXIMUM RATINGS
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Thermal Resistance Junction-to-Ambient
Thermal Resistance Junction-to-Case
Collector Current
Total Power Dissipation
@ T
A
= +25 °C
(2)
@ T
C
= +110 °C
(1)
Symbol
V
CEO
V
CBO
V
EBO
R
ӨJA
R
ӨJC
I
C
P
D
T
J
, T
stg
2N3506L
40
60
5.0
175
18
3.0
1.0
5.0
2N3507L
50
80
Unit
V
V
V
o
o
C/W
C/W
A
W
°C
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Operating & Storage Junction Temperature Range
-65 to +200
Notes:
1. Derate linearly 5.71 mW/°C for T
A
> +25 °C.
2. Derate linearly 55.5 mW/°C for T
C
> +110 °C.
T4-LDS-0016-1, Rev. 1 (111682)
©2011 Microsemi Corporation
Page 1 of 6
2N3506L thru 2N3507AL
MECHANICAL and PACKAGING
•
•
•
•
•
•
CASE: Hermetically sealed, kovar base, nickel cap.
TERMINALS: Leads are kovar, nickel plated, and finish is solder dip (Sn63/Pb37). Can be RoHS compliant (commercial grade
only) with pure matte tin (commercial grade only).
MARKING: Part number, date code, manufacturer’s ID.
POLARITY: NPN (see package outline).
WEIGHT: Approximately 1.14 grams.
See
Package Dimensions
on last page.
PART NOMENCLATURE
JAN
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commercial
JEDEC type number
(see
Electrical Characteristics
table)
2N3506 A
L
(e3)
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Long-Leaded
Level improvement
A = 2 V gain specification @
-55°C
Blank = 1 V gain specification @
-55°C
Symbol
C
obo
I
CEO
I
CEX
I
EBO
h
FE
V
CEO
V
CBO
V
EBO
SYMBOLS & DEFINITIONS
Definition
Common-base open-circuit output capacitance.
Collector cutoff current, base open.
Collector cutoff current, circuit between base and emitter.
Emitter cutoff current, collector open.
Common-emitter static forward current transfer ratio.
Collector-emitter voltage, base open.
Collector-emitter voltage, emitter open.
Emitter-base voltage, collector open.
T4-LDS-0016-1, Rev. 1 (111682)
©2011 Microsemi Corporation
Page 2 of 6
2N3506L thru 2N3507AL
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
OFF CHARACTERISTICS
Parameters / Test Conditions
Collector-Emitter Breakdown Voltage
I
C
= 10 mA
Collector-Emitter Cutoff Current
V
CE
= 40 V; V
EB
= 4 V
V
CE
= 60 V; V
EB
= 4 V
Collector-Base Breakdown Voltage
I
C
= 100 µA
Emitter-Base Breakdown Voltage
I
E
= 10 µA
ON CHARACTERISTICS
Parameters / Test Conditions
Forward-Current Transfer Ratio
I
C
= 500 mA, V
CE
= 1 V
Forward-Current Transfer Ratio
I
C
= 1.5 A, V
CE
= 2 V
Forward-Current Transfer Ratio
I
C
= 2.5 A, V
CE
= 3 V
Forward-Current Transfer Ratio
I
C
= 3.0 A, V
CE
= 5 V
Forward-Current Transfer Ratio
o
I
C
= 500 mA, V
CE
= 1.0 V @ -55 C
Forward-Current Transfer Ratio
o
I
C
= 500 mA, V
CE
= 2.0 V @ -55 C
Collector-Emitter Saturation Voltage
I
C
= 500 mA, I
B
= 50 mA
Collector-Emitter Saturation Voltage
I
C
= 1.5 A, I
B
= 150 mA
Collector-Emitter Saturation Voltage
I
C
= 2.5 A, I
B
= 250 mA
Base-Emitter Saturation Voltage
I
C
= 500 mA, I
B
= 50 mA
Base-Emitter Saturation Voltage
I
C
= 1.5 A, I
B
= 150 mA
Base-Emitter Saturation Voltage
I
C
= 2.5 A, I
B
= 250 mA
(1) Pulse Test: Pulse Width = 300 µs, duty cycle ≤ 2.0%.
(1)
Symbol
2N3506L
2N3507L
2N3506L
2N3507L
2N3506L
2N3507L
V
(BR)CEO
Min.
40
50
Max.
Unit
V
I
CEX
60
80
5
1.0
1.0
µA
V
(BR)CBO
V
(BR)EBO
V
V
Symbol
2N3506L
2N3507L
2N3506L
2N3507L
2N3506L
2N3507L
2N3506L
2N3507L
2N3506L
2N3507L
2N3506AL
2N3507AL
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
V
CE(sat)
V
CE(sat)
V
CE(sat)
V
BE(sat)
V
BE(sat)
V
BE(sat)
Min.
50
35
40
30
30
25
25
20
25
17
25
17
Max.
250
175
200
150
Unit
0.5
1.0
1.5
1.0
0.8
1.3
2.0
V
V
V
V
V
V
T4-LDS-0016-1, Rev. 1 (111682)
©2011 Microsemi Corporation
Page 3 of 6
2N3506L thru 2N3507AL
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Magnitude of Common Emitter Small-Signal Short-
Circuit Forward Current Transfer Ratio
I
C
= 100 mA, V
CE
= 5Vdc, f = 20 MHz
Output Capacitance
V
CB
= 10 V, I
E
= 0, 100 kHz ≤ f ≤ 1.0 MHz
Input Capacitance
V
EB
= 3.0 V, I
C
= 0, 100 kHz ≤ f ≤ 1.0 MHz
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Delay Time
I
C
= 1.5 A, I
B1
= 150 mA
Rinse Time
I
C
= 1.5 A, I
B1
= 150 mA
Storage Time
I
C
= 1.5 A, I
B1
= I
B2
= 150 mA
Fall Time
I
C
= 1.5 A, I
B1
= I
B2
= 150 mA
(2)
Symbol
|h
fe
|
Min.
3.0
Max.
15
Unit
C
obo
C
ibo
40
300
pF
pF
Symbol
Min.
Max.
15
30
55
35
Unit
ns
ns
ns
ns
t
d
t
r
t
s
t
f
(2) Consult MIL-PRF-19500/349 for additional infornation.
T4-LDS-0016-1, Rev. 1 (111682)
©2011 Microsemi Corporation
Page 4 of 6
2N3506L thru 2N3507AL
GRAPHS
DC Operation Maximum Rating (W)
Legend
(top to bottom)
V
CE
= 6 V
V
CE
= 10 V
V
CE
= 20 V
V
CE
= 40 V
V
CE
= 60 V
T
C
(
C
) (Case)
o
NOTE:
Thermal Resistance Junction to Case = 18.0
o
C/W
FIGURE 1
Temperature-Power Derating Curve
THETA ( C/W)
10-5
o
.1
.1
10-4
.1
10-3
.1
10-2
.1
TIME (s)
10-1
0.1
1
10
100
FIGURE 2
Maximum Thermal Impedance (R
ӨJC
)
T4-LDS-0016-1, Rev. 1 (111682)
©2011 Microsemi Corporation
Page 5 of 6
