TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/253
Devices
2N930
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
T
J
,
T
stg
Symbol
R
θ
JC
Value
45
60
6.0
30
300
600
-55 to +200
Max.
97
Units
Vdc
Vdc
Vdc
mAdc
mW
0
@ T
A
= +25
0
C
(1)
@ T
C
= +25
0
C
(2)
Operating & Storage Junction Temperature Range
C
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 2.0 mW/
0
C above T
A
= +25
0
C
2) Derate linearly 4.0 mW/
0
C above T
C
= +25
0
C
0
TO- 18*
(TO-206AA)
Unit
C/W
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
C
= +25
0
C unless otherwise noted)
Characteristics
Symbol
V
(BR)CEO
I
CBO
Min.
Max.
Unit
Vdc
10
10
10
5.0
2.0
2.0
µAdc
ηAdc
µAdc
ηAdc
ηAdc
ηAdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 10 mAdc
Collector-Base Cutoff Current
V
CB
= 60 Vdc
V
CB
= 45 Vdc
Emitter-Base Cutoff Current
V
EB
= 6.0 Vdc
V
EB
= 5.0 Vdc
Collector-Emitter Cutoff Current
V
CE
= 45 Vdc
Collector-Base Cutoff Current
V
CE
= 5.0 Vdc
45
I
EBO
I
CES
I
CEO
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N930, JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
I
C
= 10
µAdc,
V
CE
= 5.0 Vdc
I
C
= 500
µAdc,
V
CE
= 5.0 Vdc
I
C
= 10 mAdc, V
CE
= 5.0 Vdc
Collector-Emitter Saturation Voltage
I
C
= 10 mAdc, I
B
= 0.5 mAdc
Base-Emitter Saturation Voltage
I
C
= 10 mAdc, I
B
= 0.5 mAdc
h
FE
100
150
300
600
V
CE(sat)
V
BE(sat)
0.6
1.0
1.0
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= 500
µAdc,
V
CE
= 5.0 Vdc, f = 30 MHz
Small-Signal Short-Circuit Forward Current Transfer Ratio
I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc, f = 1.0 kHz
Small-Signal Short-Circuit Input Impedance
V
CB
= 5.0 Vdc, I
E
= 1.0 mAdc, f = 1.0 kHz
Small-Signal Short-Circuit Output Admittance
V
CB
= 5.0 Vdc, I
E
= 1.0 mAdc, f = 1.0 kHz
Output Capacitance
V
CB
= 5.0 Vdc, I
E
= 0, 100 kHz
≤
f
≤
1.0 MHz
Noise Figure
V
CE
= 5 Vdc; I
C
= 10
µAdc;
R
g
=10kΩ
Test 1: f = 100 Hz
Test 2: f = 1.0 kHz
Test 3: f = 10 kHz
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle
≤
2.0%.
h
fe
1.5
h
fe
h
ib
h
ob
C
obo
150
25
6.0
600
32
1.0
8.0
Ω
µΩ
pF
NF
5
3
3
dB
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
