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K1109G-J34-AE3-R

Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction FET, HALOGEN FREE PACKAGE-3

器件类别:分立半导体    晶体管   

厂商名称:UNISONIC TECHNOLOGIES CO.,LTD

厂商官网:http://www.unisonic.com.tw/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
包装说明
SMALL OUTLINE, R-PDSO-G3
针数
3
Reach Compliance Code
compliant
ECCN代码
EAR99
Is Samacsys
N
配置
SINGLE WITH BUILT-IN DIODE AND RESISTOR
最大漏极电流 (ID)
0.01 A
FET 技术
JUNCTION
JESD-30 代码
R-PDSO-G3
元件数量
1
端子数量
3
工作模式
DEPLETION MODE
最高工作温度
125 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
极性/信道类型
N-CHANNEL
最大功率耗散 (Abs)
0.08 W
认证状态
Not Qualified
表面贴装
YES
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
AMPLIFIER
晶体管元件材料
SILICON
Base Number Matches
1
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UNISONIC TECHNOLOGIES CO., LTD
K1109
N-CHANNEL JFET FOR
ELECTRET CONDENSER
MICROPHONE
DESCRIPTION
The UTC
K1109
is N-channel JFET for electrets condenser
microphone.
N-CHANNEL JFET
FEATURES
* High GM Implies Low Transfer loss
* Built-In Gate-Source Diode and Resistor Implies Fast Power on
Settling Time
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
K1109L-x-AE3-R
K1109G-x-AE3-R
K1109L-x-AC3-R
K1109G-x-AC3-R
Package
SOT-23
SOT-113
Pin Assignment
1
2
3
S
D
G
S
D
G
Packing
Tape Reel
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 4
QW-R206-009.M
K1109
ABSOLUTE MAXIMUM RATINGS
(unless otherwise specified )
N-CHANNEL JFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSX
20
V
Gate-Drain Voltage
V
GDO
-20
V
Drain Current
I
D
10
mA
Gate Current
I
G
10
mA
Power Dissipation
P
D
80
mW
Junction Temperature
T
J
+125
°C
Storage Temperature
T
STG
-55 ~ +125
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
PARAMETER
Drain Current
Gate Off Voltage
Forward Transfer Admittance
Input Capacitance
Noise Voltage
SYMBOL
I
DSS
V
GS(OFF)
lYFSl
C
ISS
NV
TEST CONDITIONS
V
DS
=2.0V, V
GS
=0
V
DS
=5.0V, I
D
=1.0μA
V
DS
=5.0V, V
GS
=0, f=1kHz
V
DS
=5.0V, V
GS
=0, f=1.0MHz
MIN
40
-0.1
600
MAX UNIT
600
μA
-1.0
V
1600
μS
7.0
8.0
pF
1.8
3.0
V
TYP
CLASSIFICATION OF I
DSS
RANK
RANGE
J32
40-70
J33
60-110
J34
90-180
J35
150-300
J36
200-450
J37
300-600
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R206-009.M
K1109
TEST CIRCUIT
N-CHANNEL JFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R206-009.M
K1109
TYPICAL CHARACTERISTICS
Drian Current vs Drain Source Voltage(J35)
600
0.15V
N-CHANNEL JFET
Power Dissipatio vs Ambient Temperature
Allowable power dissipation,P
C
(mW)
100
500
Drain Current,ID(uA)
0.10V
75
400
0.05V
300
200
100
0
0
2
4
V
GS
=0V
-0.05V
-0.10V
-0.15V
50
25
0
0
25
50
75
100
125
Ambient Temperature, T
A
( )
6
8
10
Drain Source Voltage,V
DS
(V)
|YFS| - I
DSS
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
100
350
200
150
250
300
Zero-Gate Voltage Drain Current,I
DSS
-uA
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-009.M
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