JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92S Plastic-Encapsulate Transistors
TO-92S
1. SOURCE
K596
Si N-CHANNEL JUNCTION FET
FEATURES
Especially suited for use in audio, telephone
capacitor microphones
Excellent voltage characteristic
Excellent transient characteristic
2. GATE
3. DRAIN
123
ABSOLUTE MAXIMUN RATINGS(Ta=25℃,unless otherwise specified)
PARAMETER
Gate drain voltage
Gate current
Drain current
Power dissipation
Junction temperature
Storage temperature
SYMBOL
V
GDO
I
G
I
D
P
D
T
j
T
STG
RATING
-20
10
1
100
150
-55 to+150
UNIT
V
mA
mA
mW
℃
℃
unless
conditions
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Gate-Drain breakdown Voltage
Gate-Source cut-off Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Output Capacitance
Symbol
BV
GDO
V
GS(off)
I
DSS
|Y
FS
|
C
iss
Test
I
G
= -100μA
otherwise
MIN
-20
specified)
TYP
MAX
UNIT
V
-0.6
-1.5
800
1.2
3.5
0.65
V
μA
mS
pF
pF
V
DS
= 5V, I
D
=1μA
V
DS
= 5 V,V
GS
=0
V
DS
= 5V, V
GS
=0, f=1KHz
V
DS
=5V, V
GS
=0, f=1MHz
V
DS
=5V, V
GS
=0,
f =
1MHz
100
0.4
C
RSS
I
DSS
Classification
Classification
I
DSS
(μA)
A
100-170
B
150-240
C
210-350
D
320-480
E
440-800
Typical characteristics
K596
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