SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for active power factor
correction , electronic lamp ballasts based on half bridge topology and
switching mode power supplies.
KMB050N60P
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
FEATURES
・V
DSS
= 60V, I
D
= 50A
・Drain-Source
ON Resistance :
R
DS(ON)
=0.022Ω @V
GS
= 10V
・Qg(typ.)
= 32nC
・Improved
dv/dt capacity, high Ruggedness
・Maximum
Junction Temperature Range (175℃)
MAXIMUM RATING (Tc=25℃)
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
@T
C
=25℃
Drain Current
@T
C
=100℃
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25℃
Derate above 25℃
T
j
T
stg
I
DP
E
AS
E
AR
dv/dt
P
D
0.8
175
-55½175
W/℃
℃
℃
SYMBOL
V
DSS
V
GSS
I
D
35
200
493
12
7.0
120
mJ
mJ
V/ns
W
A
RATING
60
±20
50
UNIT
V
V
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-
Ambient
R
thJC
R
thCS
R
thJA
1.24
0.5
62.5
℃/W
℃/W
℃/W
2006. 4. 24
Revision No : 1
1/6
KMB050N60P
ELECTRICAL CHARACTERISTICS (Tc=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
BV
DSS
ΔBV
DSS
/ΔT
j
I
DSS
V
th
I
GSS
R
DS(ON)
I
D
=250μ V
GS
=0V
A,
I
D
=250μ Referenced to 25℃
A,
V
DS
=60V, V
GS
=0V,
V
DS
=V
GS
, I
D
=250μ
A
V
GS
=±20V, V
DS
=0V
V
GS
=10V, I
D
=25A
60
-
-
2.0
-
-
-
0.07
-
-
-
0.018
-
-
10
4.0
±100
0.022
V
V/℃
μ
A
V
nA
Ω
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Source-Drain Diode Ratings
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
V
GS
<V
th
I
SP
V
SD
t
rr
Q
rr
I
S
=50A, V
GS
=0V
I
S
=50A, V
GS
=0V,
s
dIs/dt=100A/μ
-
-
-
-
-
-
50
70
200
1.5
-
-
V
ns
μ
C
-
-
50
A
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
rss
C
oss
V
DS
=25V, V
GS
=0V, f=1.0MHz
V
DD
= 30V
I
D
=25A
R
G
= 25Ω
(Note4,5)
-
-
-
-
-
80
85
1050
70
460
170
180
1365
90
600
pF
V
DS
= 48V, I
D
= 50A
V
GS
=10V
(Note4,5)
-
-
-
-
-
32
8
12
20
100
42
-
-
50
210
ns
nC
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=230mH, I
S
=50A, V
DD
=25V, R
G
=25Ω, Starting T
j
=25℃.
Note 3) I
S
≤50A,
dI/dt≤300A/㎲, V
DD
≤BV
DSS
, Starting T
j
=25℃.
Note 4) Pulse Test : Pulse width
≤300㎲,
Duty Cycle
≤2%.
Note 5) Essentially independent of operating temperature.
2006. 4. 24
Revision No : 1
2/6
KMB050N60P
2006. 4. 24
Revision No : 1
3/6
KMB050N60P
2006. 4. 24
Revision No : 1
4/6
KMB050N60P
2006. 4. 24
Revision No : 1
5/6
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