SEMICONDUCTOR
TECHNICAL DATA
General Description
KMB060N40BA
N-Ch Trench MOSFET
K
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for Back-light Inverter and power
Supply.
J
A
L
B
F
D
P
E
R
G
FEATURES
V
DSS
=40V, I
D
=60A.
Low Drain to Source ON Resistance.
: R
DS(ON)
=8.5m (Max.) @ V
GS
=10V
: R
DS(ON)
=11m (Max.) @ V
GS
=4.5V
Super High Dense Cell Design.
High Power and Current Handling Capability.
N
H
Q
C
O
M
DIM MILLIMETERS
_
A
9.95 + 0.05
_
9.2 + 0.1
B
8.00
C
_
15.3 + 0.2
D
_
E
4.9 + 0.2
F
Φ
1.5
_
G
2.54 + 0.05
_
0.80 + 0.05
H
_
J
1.27 + 0.10
K
4.50
L
1.30
M
6.90
1.75
N
O
4.40
_
0.05
P
0.1 +
0.15
_
Q
2.4 + 0.1
R
2.0 MIN
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Unless otherwise Noted)
SYMBOL
V
DSS
V
GSS
N-Ch
40
20
60
A
100
100
153
69
W
3.1
150
-55 150
1.8
40
/W
/W
A
mJ
UNIT
V
V
D
2
PAK
Marking
DC@T
C
=25
Pulsed
(Note1)
(Note2)
I
D
I
DP
I
S
Drain to Source Diode Forward Current
Single Pulsed Avalanche Energy
Drain Power Dissipation
@T
C
=25
@Ta=25
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note1)
(Note2)
(Note3)
(Note1)
(Note2)
KMB
060N40
BA
Type Name
E
AS
P
D
T
j
T
stg
R
thJC
R
thJA
Lot No
Note 1) R
thJC
means that the infinite heat sink is mounted.
Note 2) Surface Mounted on 1″ 1″
Pad of 2 oz copper.
Note 3) L=42.5 H, I
AS
=60A, V
DD
=20V, V
GS
=10V, Starting T
j
=25
PIN CONNECTION (TOP VIEW)
D
2
2
1
1
3
3
G
2009. 1. 14
S
Revision No : 0
1/4
KMB060N40BA
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
Static
Drain to Source Breakdown Voltage
Drain Cut-off Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Drain to Source ON Resistance
Forward Transconductance
Dynamic
Input Capacitance
Ouput Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Source
to
Drain Diode Ratings
Source to Drain Forward Voltage
Note 4) Pulse Test : Pulse width <300
V
SD
*
, Duty cycle < 2%
V
GS
=0V, I
S
=14A
(Note4)
-
0.8
1.2
V
V
GS
=10V
V
GS
=5V
C
iss
C
oss
C
rss
R
g
Q
g
*
Q
g
*
Q
gs
*
Q
gd
*
t
d(on)
*
t
r
*
t
d(off)
*
t
f
*
V
DD
=20V, V
GS
=10V
I
D
=1A, R
G
=6
(Note4)
V
DS
=20V, V
GS
=10V, I
D
=14A
(Note4)
-
-
-
-
-
-
5.7
5.4
16
14
55
14
-
-
-
-
ns
-
-
f=1MHz
V
DS
=20V, f=1MHz, V
GS
=0V
-
-
-
-
-
-
1280
250
125
1.5
25.4
13.8
-
-
-
-
-
-
nC
pF
BV
DSS
I
DSS
I
GSS
V
th
R
DS(ON)*
g
fs*
V
GS
=0V, I
D
=250 A
V
GS
=0V, V
DS
=24V
V
GS
=
20V, V
DS
=0V
40
-
-
1
(Note4)
(Note4)
(Note4)
-
-
-
-
-
-
1.8
5.7
7.5
58
-
1
100
3
8.5
11
-
m
S
V
A
nA
V
)
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
SYMBOL
V
DS
=V
GS,
I
D
=250 A
V
GS
=10V, I
D
=14A
V
GS
=4.5V, I
D
=11A
V
DS
=5V, I
D
=14A
2009. 1. 14
Revision No : 0
2/4
KMB060N40BA
Drain to Source On Resistance R
DS(ON)
(mΩ)
Fig1. I
D
- V
DS
100
4.5V
Fig2. R
DS(ON)
-I
D
20
16
12
V
GS
=4.5V
Drain Current I
D
(A)
80
60
40
V
GS
=10, 5V
4.0V
8
V
GS
=10V
3.5V
20
3.0V
4
0
0
20
40
60
80
100
0
0
1
2
3
4
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Fig3. I
D
- V
GS
V
DS
=5V
Fig4. R
DS(on)
- T
j
Normalized On-Resistance R
DS(ON)
1.8
1.6
V
GS
=10V,I
D
=14A
100
Drain Current I
D
(A)
80
60
40
20
0
1
2
3
4
5
T
j
=-55 C
1.4
1.2
1.0
0.8
0.6
-75 -50 -25
V
GS
=4.5V,I
D
=11A
T
j
=125 C
T
j
=25 C
0
25
50
75 100 125 150 175
Gate to Source Voltage V
GS
(V)
Junction Temperature Tj ( C )
Fig5. V
th
- T
j
Normalized Gate to Source Threshold Voltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-75 -50 -25
Fig6. R
DS(on)
- V
GS
Drain to Source On-Resistance R
DS(ON)
(mΩ)
25
I
D
=7A
V
GS
=V
DS
, I
D
=250µA
20
15
10
T
j
=25 C
T
j
=125 C
5
2
4
6
8
10
0
25
50
75 100 125 150 175
Junction Temperature Tj ( C )
Gate to Source Volatage V
GS
(V)
2009. 1. 14
Revision No : 0
3/4
KMB060N40BA
Fig 8. C - V
DS
2000
f=1MHz
Fig7. I
D
- V
SD
10
3
Drain Current I
D
(A)
Capacitance (pF)
10
2
T
j
=125 C
T
j
=-55 C
1500
Ciss
10
1
1000
10
0
T
j
=25 C
500
Coss
Crss
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
0
10
20
30
40
Source to Drain Forward Voltage V
SD
(V)
Drain to Source Voltage V
DS
(V)
Fig9. Safe Operation Area
10
3
Drain Current I
D
(A)
R
DS(ON)
Limited
10
2
100us
10
1
1ms
10ms
DC
V
GS
= 10V
SINGLE PULSE
T
c
= 25 C
10
0
10
-1
10
-1
10
0
10
1
10
2
Drain to Source Voltage V
DS
(V)
Fig10. Transient Thermal Response Curve
Normalized Effective Transient Thermal Resistance
10
1
10
0
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE
10
-1
P
DM
t
1
t
2
10
-2
- Duty = t/T
T
j(max)
- T
c
- R
thJC
=
P
D
-4
10
10
-3
10
-2
10
-1
1
10
1
2009. 1. 14
Revision No : 0
4/4
