SEMICONDUCTOR
TECHNICAL DATA
General Description
This Device is a Dual N-Channel MOSFET designed for use as a bi-
directional load switch, facilitated by its commom-drain configuration.
It′ mainly suitable for Li-ion battery pack.
s
KMC6D5CN20CA
Common N-Ch Trench MOSFET
C
D
8
5
A
E1
E
B
A1
FEATURES
V
DSS
=20V, I
D
=6.5A.
Low Drain to Source On Resistance.
: R
DS(ON)
=24.0m (Max.) @ V
GS
=4.5V
: R
DS(ON)
=25.0m (Max.) @ V
GS
=4.0V
: R
DS(ON)
=27.0m (Max.) @ V
GS
=3.1V
: R
DS(ON)
=32.0m (Max.) @ V
GS
=2.5V
ESD Protection.
Super High Dense Cell Design.
1
4
DIM
A
A1
B
GAUGE
PLANE
C
D
E
E1
L
MILLIMETERS
1.2 MAX
0.15 MAX
_
0.28 + 1
0.65 Typ.
_
3.0 + 0.10
_
6.40 + 0.20
_
4.40 + 0.10
_
+ 0.20
0.50
0.25
L
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Power Dissipation
)
SYMBOL RATING
V
DSS
V
GSS
20
12
6.5
A
26
1.5
150
-55 150
83.3
/W
W
UNIT
V
V
Marking
TSSOP-8
DC@Ta = 25℃(Note1)
Pulsed
@Ta = 25℃(Note1)
I
D
I
DP
P
D
T
j
T
stg
R
thJA
Type Name
KMC6D5
CN20CA
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient(Note1)
Lot No.
Note 1) Surface Mounted on 1″ 1″FR4 Board, t≤10sec
PIN CONNECTION (TOP VIEW)
D
S1
S1
G1
1
2
3
4
8
7
6
5
D
S2
S2
G2
1
2
3
4
Rg
Rg
8
7
6
5
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Revision No : 0
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KMC6D5CN20CA
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
Static
Drain to Source Breakdown Voltage
Drain Cut-off Current
Gate to Source Leakage Current
Gate Threshold Voltage
BV
DSS
I
DSS
I
GSS
V
th
V
GS
=0V, I
D
=250 A
V
DS
=20V, V
GS
=0V
V
GS
= 12V, V
DS
=0V
V
DS
=V
GS,
I
D
=250 A
V
GS
=4.5V, I
D
=3.0A
Drain to Source On Resistance
R
DS(ON)
V
GS
=4.0V, I
D
=3.0A
V
GS
=3.1V, I
D
=3.0A
V
GS
=2.5V, I
D
=3.0A
Gate Resistance
Forward Transconductance
Dynamic
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Source to Drain Diode Ratings
Source to Drain Diode Forward Voltage
Note2) Pulse test : Pulse width 300
V
SD
V
GS
=0V, I
S
=1.7A
(Note2)
-
0.8
1.2
V
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DS
=10V, V
GS
=4.0V
I
D
=4.0A, R
G
=6
(Note2)
V
DS
=10V, I
D
=6.5A
V
GS
=4.0V
(Note2)
-
-
-
-
-
-
-
4.6
1.0
2.6
1.0
1.8
7.0
6.0
-
-
-
-
-
-
-
s
nC
R
g
g
fs
f=1MHz
V
DS
=5V, I
D
=6.5A
(Note2)
(Note2)
(Note2)
(Note2)
(Note2)
20
-
-
0.5
-
-
-
-
-
-
-
-
-
-
21.5
22.5
24.5
28.5
2.5
28
-
1
10
1.5
24.0
25.0
27.0
32.0
-
-
k
S
m
V
A
A
V
)
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
SYMBOL
, Duty Cycle 2%.
2009. 6. 4
Revision No : 0
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KMC6D5CN20CA
Fig 1. I
D
- V
DS
30
Fig 2. R
DS(ON)
- I
D
50
2.5V
Drain to Source On-Resistance
R
DS(ON)
(mΩ)
V
GS
=4.5,4.0,3.1V
Drain Current I
D
(A)
24
18
12
40
V
GS
=2.5V
30
20
10
0
V
GS
=4.5V
2.0V
6
0
0
0.5
1
1.5
2
2.5
3
0
6
12
18
24
30
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Fig 3. I
D
- V
GS
Normalized On-Resistance R
DS(ON)
30
24
18
12
25
C
Fig 4. R
DS(ON)
- T
j
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-75 -50 -25
0
25
50
75 100 125 150 175
V
GS
=2.5V, I
D
=3A
V
GS
=4.5V, I
D
=3A
Drain Current I
D
(A)
6
150
C
Tj=-55
C
0
0
1
2
3
4
Gate to Source Voltage V
GS
(V)
Junction Temperature Tj ( C )
Fig 5. V
th
- Tj
1.6
Fig 6. I
S
- V
SD
100
Gate Threshold Voltage V
th
(V)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-75 -50 -25
0
25
50
75 100 125 150 175
Reverse Drain Current I
S
(A)
V
GS
= V
DS,
I
D
= 250µA
10
1
150
C
25
C
Tj=-55
C
0.1
0.2
0.4
0.6
0.8
1.0
1.2
Junction Temperature Tj ( C)
Source to Drain Forward Voltage V
SD
(V)
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Revision No : 0
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KMC6D5CN20CA
Fig7. R
DS(ON)
- V
GS
50
40
30
20
10
0
1.5
Tj=150
C
Drain to Source On Resistance R
DS(ON)
(mΩ)
Fig8. C - V
DS
I
D
=6.5A
1000
f = 1MHz
Capacitance C (pF)
800
600
400
200
Crss
Coss
Ciss
Tj=25 C
2.5
3.5
4.5
0
0
4
6
12
16
20
Gate to Source Voltage V
GS
(V)
Drain to Source Voltage V
DS
(V)
Fig9. Qg - V
GS
5
Fig10. Safe Operation Area
10
2
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
4
3
V
DS
= 10
V
I
D
= 6.5A
10
1
200µs
1ms
10
0
R
DS(ON)
Limited
10ms
100ms
2
1
0
0
1.2
2.4
3.6
4.8
6
10
-1
V
GS
=4.5V
SINGLE PULSE
Ta= 25 C
DC
10
-2
10
-2
10
-1
10
0
10
1
10
2
Gate Charge Qg (nC)
Drain to Source Voltage V
DS
(V)
Fig10. Transient Thermal Response Curve
10
1
Normalized Effective Transient Thermal Resistance
10
0
Duty Cycle = 0.5
0.2
10
-1
0.1
0.05
0.02
0.01
10
-2
Single Pulse
P
DM
t
1
t
2
1. Duty Cycle D = t
1
/t
2
2. R
thJA
=111 C/W
10
-3
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
Square Wave Pulse Duration tw (sec)
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Revision No : 0
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