SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
A
G
KRC410E~KRC414E
EPITAXIAL PLANAR NPN TRANSISTOR
E
B
D
3
2
1
DIM
A
B
C
D
E
G
H
J
H
Reduce a Quantity of Parts and Manufacturing Process.
High Packing Density.
MILLIMETERS
_
1.60 + 0.10
_
0.85 + 0.10
_
0.70 + 0.10
0.27+0.10/-0.05
_
1.60 + 0.10
_
1.00 + 0.10
0.50
_
0.13 + 0.05
EQUIVALENT CIRCUIT
C
R1
1. COMMON (EMITTER)
2. IN (BASE)
3. OUT (COLLECTOR)
J
B
E
C
ESM
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
RATING
50
50
5
100
UNIT
V
V
V
mA
CHARACTERISTIC
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
P
C
T
j
T
stg
RATING
100
150
-55 150
UNIT
mW
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
KRC410E
KRC411E
Input Resistor
KRC412E
KRC413E
KRC414E
R
1
SYMBOL
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
*
TEST CONDITION
V
CB
=50V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=5V, I
C
=1mA
I
C
=10mA, I
B
=0.5mA
V
CE
=10V, I
C
=5mA
MIN.
-
-
120
-
-
-
-
-
-
-
TYP.
-
-
-
0.1
250
4.7
10
100
22
47
MAX.
100
100
-
0.3
-
-
-
-
-
-
k
V
MHz
UNIT
nA
nA
Marking
MARK SPEC
TYPE
MARK
KRC410E
NK
KRC411E
NM
KRC412E
NN
KRC413E
NO
KRC414E
NP
Type Name
2002. 7. 10
Revision No : 1
1/4
KRC410E~KRC414E
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
KRC410E
KRC411E
Rise Time
KRC412E
KRC413E
KRC414E
KRC410E
KRC411E
Switching
Time
Storage Time
KRC412E
KRC413E
KRC414E
KRC410E
KRC411E
Fall Time
KRC412E
KRC413E
KRC414E
t
f
t
stg
V
O
=5V
V
IN
=5V
R
L
=1k
t
r
SYMBOL
TEST CONDITION
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
0.025
0.03
0.3
0.06
0.11
3.0
2.0
6.0
4.0
5.0
0.2
0.12
2.0
0.9
1.4
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S
UNIT
2002. 7. 10
Revision No : 1
2/4
KRC410E~KRC414E
h
FE
- I
C
COLLECTOR-EMITTER SATURATIN
VOLTAGE V
CE(sat)
(V)
2k
DC CURRENT GAIN h
FE
1k
500
300
100
50
30
V
CE
=5V
Ta=100 C
Ta=25 C
Ta=-25 C
KRC410E
V
CE(sat)
- I
C
2
1
0.5
0.3
KRC410E
I
C
/I
B
=20
0.1
0.05
0.03
0.01
0.1
Ta=100 C
Ta=25 C
Ta=-25 C
10
0.1
0.3
1
3
10
30
100
0.3
1
3
10
30
100
COLLECTOR CURRENT I
C
(mA)
COLLECTOR CURRENT I
C
(mA)
h
FE
- I
C
COLLECTOR-EMITTER SATURATIN
VOLTAGE V
CE(sat)
(V)
2k
DC CURRENT GAIN h
FE
1k
500
300
100
50
30
V
CE
=5V
Ta=100 C
Ta=25 C
Ta=-25 C
KRC411E
V
CE(sat)
- I
C
2
1
0.5
0.3
0.1
0.05
0.03
0.01
0.1
Ta=100 C
Ta=25 C
Ta=-25 C
KRC411E
I
C
/I
B
=20
10
0.1
0.3
1
3
10
30
100
0.3
1
3
10
30
100
COLLECTOR CURRENT I
C
(mA)
COLLECTOR CURRENT I
C
(mA)
h
FE
- I
C
COLLECTOR-EMITTER SATURATIN
VOLTAGE V
CE(sat)
(V)
2k
1k
DC CURRENT GAIN h
FE
500
300
100
50
30
V
CE
=5V
KRC412E
V
CE(sat)
- I
C
2
1
0.5
0.3
0.1
0.05
0.03
0.01
Ta=100 C
Ta=25 C
Ta=-25 C
KRC412E
I
C
/I
B
=20
Ta=100 C
Ta=25 C
Ta=-25 C
10
0.1
0.3
1
3
10
30
100
0.1
0.3
1
3
10
30
100
COLLECTOR CURRENT I
C
(mA)
COLLECTOR CURRENT I
C
(mA)
2002. 7. 10
Revision No : 1
3/4
KRC410E~KRC414E
h
FE
- I
C
COLLECTOR-EMITTER SATURATIN
VOLTAGE V
CE(sat)
(V)
2k
DC CURRENT GAIN h
FE
1k
500
300
100
50
30
V
CE
=5V
KRC413E
V
CE(sat)
- I
C
2
1
0.5
0.3
KRC413E
I
C
/I
B
=20
Ta=100 C
Ta=25 C
Ta=-25 C
0.1
0.05
0.03
0.01
0.1
0.3
1
3
10
30
100
COLLECTOR CURRENT I
C
(mA)
Ta=100 C
Ta=25 C
Ta=-25 C
10
0.1
0.3
1
3
10
30
100
COLLECTOR CURRENT I
C
(mA)
h
FE
- I
C
COLLECTOR-EMITTER SATURATIN
VOLTAGE V
CE(sat)
(V)
2k
DC CURRENT GAIN h
FE
1k
500
300
100
50
30
10
V
CE
=5V
Ta=100 C
Ta=25 C
Ta=-25 C
KRC414E
V
CE(sat)
- I
C
2
1
0.5
0.3
0.1
0.05
0.03
0.01
0.1
0.3
1
3
10
30
100
Ta=100 C
Ta=25 C
Ta=-25 C
KRC414E
I
C
/I
B
=20
0.1
0.3
1
3
10
30
100
COLLECTOR CURRENT I
C
(mA)
COLLECTOR CURRENT I
C
(mA)
2002. 7. 10
Revision No : 1
4/4
