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KRC664E

EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

器件类别：分立半导体    晶体管   

厂商名称：KEC

厂商官网：http://www.keccorp.com/

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参数 预览 参数对比
器件参数
参数名称
属性值
厂商名称
KEC
包装说明
SMALL OUTLINE, R-PDSO-F5
针数
5
Reach Compliance Code
unknown
ECCN代码
EAR99
其他特性
BUILT-IN BIAS RESISTOR
最大集电极电流 (IC)
0.1 A
集电极-发射极最大电压
50 V
配置
COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)
120
JESD-30 代码
R-PDSO-F5
元件数量
2
端子数量
5
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
极性/信道类型
NPN
认证状态
Not Qualified
表面贴装
YES
端子形式
FLAT
端子位置
DUAL
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
250 MHz
Base Number Matches
1
文档预览
SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
KRC660E~KRC664E
EPITAXIAL PLANAR NPN TRANSISTOR
B
FEATURES
With Built-in Bias Resistors.
Reduce a Quantity of Parts and Manufacturing Process.
High Packing Density.
A1
A
C
B1
Simplify Circuit Design.
1
5
DIM
A
A1
B
2
3
4
EQUIVALENT CIRCUIT
C
B
R1
EQUIVALENT CIRCUIT (TOP VIEW)
5
4
H
P
P
B1
C
D
H
J
P
MILLIMETERS
_
1.6 + 0.05
_
1.0 + 0.05
_
1.6 + 0.05
_ 0.05
1.2+
0.50
_
0.2 + 0.05
_ 0.05
0.5 +
_
0.12 + 0.05
5
C
Q1
Q2
E
1
2
3
1. Q
1
IN (BASE)
2. Q
1
, Q
2
COMMON (EMITTER)
3. Q
2
IN (BASE)
4. Q
2
OUT (COLLECTOR)
5. Q
1
OUT (COLLECTOR)
TESV
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
RATING
50
50
5
100
UNIT
V
V
V
mA
CHARACTERISTIC
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* Total Rating.
SYMBOL
P
C
*
T
j
T
stg
RATING
200
150
-55 150
UNIT
mW
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
KRC660E
KRC661E
Input Resistor
KRC662E
KRC663E
KRC664E
Note : * Characteristic of Transistor Only.
R
1
SYMBOL
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
*
TEST CONDITION
V
CB
=50V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=5V, I
C
=1mA
I
C
=10mA, I
B
=0.5mA
V
CE
=10V, I
C
=5mA
MIN.
-
-
120
-
-
-
-
-
-
-
TYP.
-
-
-
0.1
250
4.7
10
100
22
47
Type Name
4
J
D
MAX.
100
100
-
0.3
-
-
-
-
-
-
UNIT
nA
nA
V
MHz
k
Marking
5
MARK SPEC
TYPE
MARK
KRC660E
NK
KRC661E
NM
KRC662E
NN
KRC663E
NO
KRC664E
NP
1
2
3
2002. 7. 10
Revision No : 3
1/4
KRC660E~KRC664E
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
KRC660E
KRC661E
Rise Time
KRC662E
KRC663E
KRC664E
KRC660E
KRC661E
Switching
Time
Storage Time
KRC662E
KRC663E
KRC664E
KRC660E
KRC661E
Fall Time
KRC662E
KRC663E
KRC664E
t
f
t
stg
V
O
=5V
V
IN
=5V
R
L
=1k
t
r
SYMBOL
TEST CONDITION
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
0.025
0.03
0.3
0.06
0.11
3.0
2.0
6.0
4.0
5.0
0.2
0.12
2.0
0.9
1.4
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S
UNIT
2002. 7. 10
Revision No : 3
2/4
KRC660E~KRC664E
h
FE
- I
C
COLLECTOR-EMITTER SATURATIN
VOLTAGE V
CE(sat)
(V)
2k
DC CURRENT GAIN h
FE
1k
500
300
100
50
30
V
CE
=5V
Ta=100 C
Ta=25 C
Ta=-25 C
KRC660E
V
CE(sat)
- I
C
2
1
0.5
0.3
KRC660E
I
C
/I
B
=20
0.1
0.05
0.03
0.01
0.1
Ta=100 C
Ta=25 C
Ta=-25 C
10
0.1
0.3
1
3
10
30
100
0.3
1
3
10
30
100
COLLECTOR CURRENT I
C
(mA)
COLLECTOR CURRENT I
C
(mA)
h
FE
- I
C
COLLECTOR-EMITTER SATURATIN
VOLTAGE V
CE(sat)
(V)
2k
DC CURRENT GAIN h
FE
1k
500
300
100
50
30
V
CE
=5V
Ta=100 C
Ta=25 C
Ta=-25 C
KRC661E
V
CE(sat)
- I
C
2
1
0.5
0.3
0.1
0.05
0.03
0.01
0.1
Ta=100 C
Ta=25 C
Ta=-25 C
KRC661E
I
C
/I
B
=20
10
0.1
0.3
1
3
10
30
100
0.3
1
3
10
30
100
COLLECTOR CURRENT I
C
(mA)
COLLECTOR CURRENT I
C
(mA)
h
FE
- I
C
COLLECTOR-EMITTER SATURATIN
VOLTAGE V
CE(sat)
(V)
2k
1k
DC CURRENT GAIN h
FE
500
300
100
50
30
V
CE
=5V
Ta=100 C
Ta=25 C
Ta=-25 C
KRC662E
V
CE(sat)
- I
C
2
1
0.5
0.3
0.1
0.05
0.03
0.01
Ta=100 C
Ta=25 C
Ta=-25 C
KRC662E
I
C
/I
B
=20
10
0.1
0.3
1
3
10
30
100
0.1
0.3
1
3
10
30
100
COLLECTOR CURRENT I
C
(mA)
COLLECTOR CURRENT I
C
(mA)
2002. 7. 10
Revision No : 3
3/4
KRC660E~KRC664E
h
FE
- I
C
COLLECTOR-EMITTER SATURATIN
VOLTAGE V
CE(sat)
(V)
2k
DC CURRENT GAIN h
FE
1k
500
300
100
50
30
V
CE
=5V
Ta=100 C
Ta=25 C
Ta=-25 C
KRC663E
V
CE(sat)
- I
C
2
1
0.5
0.3
0.1
0.05
0.03
0.01
KRC663E
I
C
/I
B
=20
Ta=100 C
Ta=25 C
Ta=-25 C
10
0.1
0.3
1
3
10
30
100
0.1
0.3
1
3
10
30
100
COLLECTOR CURRENT I
C
(mA)
COLLECTOR CURRENT I
C
(mA)
h
FE
- I
C
COLLECTOR-EMITTER SATURATIN
VOLTAGE V
CE(sat)
(V)
2k
DC CURRENT GAIN h
FE
1k
500
300
100
50
30
10
V
CE
=5V
Ta=100 C
Ta=25 C
Ta=-25 C
KRC664E
V
CE(sat)
- I
C
2
1
0.5
0.3
0.1
0.05
0.03
0.01
0.1
0.3
1
3
10
30
100
Ta=100 C
Ta=25 C
Ta=-25 C
KRC664E
I
C
/I
B
=20
0.1
0.3
1
3
10
30
100
COLLECTOR CURRENT I
C
(mA)
COLLECTOR CURRENT I
C
(mA)
2002. 7. 10
Revision No : 3
4/4
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参数对比
与KRC664E相近的元器件有：KRC663E、KRC662E、KRC661E、KRC660E。描述及对比如下：
型号 KRC664E KRC663E KRC662E KRC661E KRC660E
描述 EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT) EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT) EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT) EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT) EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
厂商名称 KEC KEC KEC KEC KEC
包装说明 SMALL OUTLINE, R-PDSO-F5 SMALL OUTLINE, R-PDSO-F5 SMALL OUTLINE, R-PDSO-F5 SMALL OUTLINE, R-PDSO-F5 SMALL OUTLINE, R-PDSO-F5
针数 5 5 5 5 5
Reach Compliance Code unknown unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTOR
最大集电极电流 (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
集电极-发射极最大电压 50 V 50 V 50 V 50 V 50 V
配置 COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE) 120 120 120 120 120
JESD-30 代码 R-PDSO-F5 R-PDSO-F5 R-PDSO-F5 R-PDSO-F5 R-PDSO-F5
元件数量 2 2 2 2 2
端子数量 5 5 5 5 5
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 NPN NPN NPN NPN NPN
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES YES
端子形式 FLAT FLAT FLAT FLAT FLAT
端子位置 DUAL DUAL DUAL DUAL DUAL
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz
Base Number Matches 1 1 1 1 1
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器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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