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KSA1015YTA

晶体管类型：PNP 集电极电流Ic：150mA 集射极击穿电压Vce：50V 额定功率：400mW

器件类别：分立半导体    晶体管   

厂商名称：ON Semiconductor(安森美)

厂商官网：http://www.onsemi.cn

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器件参数
参数名称
属性值
Brand Name
ON Semiconductor
是否无铅
不含铅
厂商名称
ON Semiconductor(安森美)
包装说明
CYLINDRICAL, O-PBCY-T3
制造商包装代码
135AR
Reach Compliance Code
compliant
ECCN代码
EAR99
Factory Lead Time
7 weeks
最大集电极电流 (IC)
0.15 A
集电极-发射极最大电压
50 V
配置
SINGLE
最小直流电流增益 (hFE)
120
JEDEC-95代码
TO-92
JESD-30 代码
O-PBCY-T3
JESD-609代码
e3
元件数量
1
端子数量
3
最高工作温度
125 °C
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
CYLINDRICAL
峰值回流温度（摄氏度）
NOT SPECIFIED
极性/信道类型
PNP
最大功率耗散 (Abs)
0.4 W
认证状态
Not Qualified
表面贴装
NO
端子面层
Tin (Sn)
端子形式
THROUGH-HOLE
端子位置
BOTTOM
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
AMPLIFIER
晶体管元件材料
SILICON
标称过渡频率 (fT)
80 MHz
Base Number Matches
1
文档预览
Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at
www.onsemi.com.
Please
email any questions regarding the system integration to
Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
KSA1015 — PNP Epitaxial Silicon Transistor
September 2015
KSA1015
PNP Epitaxial Silicon Transistor
Features
• Low-Frequency Amplifier
• Collector-Base Voltage: V
CBO
= -50 V
• Complement to KSC1815
TO-92
12
1
1. Emitter
2. Collector
3. Base
3
3
2
Straight Lead
Bulk Packing
Bent Lead
Tape & Reel
Ammo Packing
Ordering Information
Part Number
KSA1015GRTA
KSA1015YTA
Marking
A1015
A1015
Package
TO-92 3L
TO-92 3L
Packing Method
Ammo
Ammo
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Junction Temperature
Storage Temperature Range
Parameter
Value
-50
-50
-5
-150
-50
150
-55 to 150
Unit
V
V
V
mA
mA
°C
°C
© 2002 Fairchild Semiconductor Corporation
KSA1015 Rev. 1.9
www.fairchildsemi.com
1
KSA1015 — PNP Epitaxial Silicon Transistor
Thermal Characteristics
(1)
Values are at T
A
= 25°C unless otherwise noted.
Symbol
P
D
R
θJA
Total Device Dissipation
Derate Above 25°C
Parameter
Max.
400
3.2
312
Unit
mW
mW/°C
°C/W
Thermal Resistance, Junction to Ambient
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
1
h
FE
2
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
NF
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
Conditions
I
C
= -100
μA,
I
E
= 0
I
C
= -10 mA, I
B
= 0
I
E
= -10
μA,
I
C
= 0
V
CB
= -50 V, I
E
= 0
V
EB
= -5 V, I
C
= 0
V
CE
= -6 V, I
C
= -2 mA
V
CE
= -6 V, I
C
= -150 mA
I
C
= -100 mA, I
B
= -10 mA
I
C
= -100 mA, I
B
= -10 mA
V
CE
= -10 V, I
C
= -1 mA
V
CB
= -10 V, I
E
= 0,
f = 1 MHz
V
CE
= -6 V, I
C
= -0.1 mA,
f = 100 Hz, R
G
= 10 kΩ
Min.
-50
-50
-5
Typ. Max.
Unit
V
V
V
-0.1
-0.1
70
25
-0.1
80
4
0.5
7
6
-0.3
-1.1
400
μA
μA
V
V
MHz
pF
dB
h
FE
Classification
Classification
h
FE
1
O
70 ~ 140
Y
120 ~ 240
GR
200 ~ 400
© 2002 Fairchild Semiconductor Corporation
KSA1015 Rev. 1.9
www.fairchildsemi.com
2
KSA1015 — PNP Epitaxial Silicon Transistor
Typical Performance Characteristics
1000
-50
-45
I
C
[mA], COLLECTOR CURRENT
I
B
= -400
μ
A
I
B
= -350
μ
A
I
B
= -300
μ
A
I
B
= -250
μ
A
I
B
= -200
μ
A
I
B
= -150
μ
A
I
B
= -100
μ
A
I
B
= -50
μ
A
V
CE
= -6V
-40
-35
-30
-25
-20
-15
-10
-5
0
0
-2
-4
-6
-8
h
FE
, DC CURRENT GAIN
100
10
-10
-12
-14
-16
-18
-20
1
-0.1
-1
-10
-100
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
V
BE
(sat)[V], V
CE
(sat)[V], SATURATION VOLTAGE
Figure 2. DC Current Gain
-10
-100
I
C
=10I
B
V
CE
=-6V
I
C
[mA], COLLECTOR CURRENT
-1
V
BE
(sat)
-10
-0.1
V
CE
(sat)
-1
-0.01
-0.1
-1
-10
-100
-0.1
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
I
C
[mA], COLLECTOR CURRENT
V
BE
(sat)[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
1000
f=1MHz
I
E
=0
V
CE
=-6V
C
ob
[pF], CAPACITANCE
10
h
FE
, DC CURRENT GAIN
1
-1
-10
-100
100
10
-1
-10
V
CB
[V], COLLECTOR-BASE VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
© 2002 Fairchild Semiconductor Corporation
KSA1015 Rev. 1.9
www.fairchildsemi.com
3
KSA1015 — PNP Epitaxial Silicon Transistor
Physical Dimensions
Figure 7. 3-LEAD, TO-92, MOLDED 0.200 IN LINE SPACING LD FORM
© 2002 Fairchild Semiconductor Corporation
KSA1015 Rev. 1.9
www.fairchildsemi.com
4
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