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KSC5027
KSC5027
High Voltage and High Reliability
• High Speed Switching
• Wide SOA
1
TO-220
2.Collector
3.Emitter
1.Base
NPN Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation ( T
C
=25°C)
Junction Temperature
Storage Temperature
Parameter
Value
1100
800
7
3
10
1.5
50
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
V
CEX
(sus)
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
C
ob
f
T
t
ON
t
STG
t
F
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn ON Time
Storage Time
Fall Time
Test Condition
I
C
= 1mA, I
E
= 0
I
C
= 5mA, I
B
= 0
I
E
= 1mA, I
C
= 0
I
C
= 1.5A, I
B1
= -I
B2
= 0.3A
L = 2mH, Clamped
V
CB
= 800V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 0.2A
V
CE
= 5V, I
C
= 1A
I
C
= 1.5A, I
B
= 0.3A
I
C
= 1.5A, I
B
= 0.3A
V
CB
= 10V, I
E
= 0, f = 1MHz
V
CE
= 10V, I
C
= 0.2A
V
CC
= 400V
I
C
= 5I
B1
= -2.5I
B2
= 2A
R
L
= 200Ω
60
15
0.5
3
0.3
10
8
Min.
1100
800
7
800
10
10
40
2
1.5
V
V
pF
MHz
µs
µs
µs
Typ.
Max.
Units
V
V
V
V
µA
µA
h
FE
Classification
Classification
h
FE1
N
10 ~ 20
R
15 ~ 30
O
20 ~ 40
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSC5027
Typical Characteristics
4.0
3.6
1000
V
CE
= 5V
I
C
[A], COLLECTOR CURRENT
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
0
1
2
3
4
5
6
7
8
h
FE
, DC CURRENT GAIN
100
I
B
I
B
I
B
I
B
= 250mA
= 200mA
= 150mA
= 100mA
I
B
= 80mA
I
B
= 60mA
I
B
= 50mA
I
B
= 40mA
I
B
= 30mA
I
B
= 20mA
I
B
= 10mA
I
B
= 0
9
10
10
1
0.01
0.1
1
10
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
10
4.0
I
C
= 5 I
B
3.5
V
CE
= 5V
I
C
[A], COLLECTOR CURRENT
1
10
3.0
1
V
BE
(sat)
2.5
2.0
0.1
V
CE
(sat)
1.5
1.0
0.5
0.01
0.01
0.1
0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
I
C
[A], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
10
100
t
STG
V
CC
= 400V
5.I
B
1 = -2.5.I
B
2 = I
C
I
C
MAX.(Pulse)
I
C
[A], COLLECTOR CURRENT
10
t
ON
, t
STG
, t
F
[
µ
s], TIME
I
C
MAX(Continuous)
1
m
10
10
1
1m
s
0
µ
t
ON
t
F
DC
s
s
0.1
0.1
0.01
0.01
0.1
1E-3
1
10
1
10
100
1000
10000
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Switching Time
Figure 6. Safe Operating Area
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSC5027
Typical Characteristics
(Continued)
100
80
I
B
2 = -0.3A
70
I
C
[A], COLLECTOR CURRENT
P
C
[W], POWER DISSIPATION
10
60
50
1
40
30
0.1
20
10
0.01
10
100
1000
10000
0
0
25
50
o
75
100
125
150
175
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
C
[ C], CASE TEMPERATURE
Figure 7. Reverse Bias Operating Area
Figure 8. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSC5027
Package Demensions
TO-220
9.90
±0.20
1.30
±0.10
2.80
±0.10
4.50
±0.20
(8.70)
ø3.60
±0.10
(1.70)
1.30
–0.05
+0.10
9.20
±0.20
(1.46)
13.08
±0.20
(1.00)
(3.00)
15.90
±0.20
1.27
±0.10
1.52
±0.10
0.80
±0.10
2.54TYP
[2.54
±0.20
]
2.54TYP
[2.54
±0.20
]
10.08
±0.30
18.95MAX.
(3.70)
)
(45
°
0.50
–0.05
+0.10
2.40
±0.20
10.00
±0.20
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
