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KSE13009F

12 A, 400 V, NPN, Si, POWER TRANSISTOR

器件类别:分立半导体    晶体管   

厂商名称:Fairchild

厂商官网:http://www.fairchildsemi.com/

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器件参数
参数名称
属性值
是否Rohs认证
不符合
零件包装代码
TO-220F
包装说明
TO-220F, 3 PIN
针数
3
Reach Compliance Code
compli
Is Samacsys
N
外壳连接
ISOLATED
最大集电极电流 (IC)
12 A
集电极-发射极最大电压
400 V
配置
SINGLE
最小直流电流增益 (hFE)
6
JESD-30 代码
R-PSFM-T3
JESD-609代码
e0
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
极性/信道类型
NPN
最大功率耗散 (Abs)
50 W
认证状态
Not Qualified
表面贴装
NO
端子面层
Tin/Lead (Sn/Pb)
端子形式
THROUGH-HOLE
端子位置
SINGLE
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
4 MHz
Base Number Matches
1
文档预览
KSE13009F
KSE13009F
High Voltage Switch Mode Application
• High Speed Switching
• Suitable for Switching Regulator and Motor Control
1
TO-220F
2.Collector
3.Emitter
1.Base
NPN Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Parameter
Value
700
400
9
12
24
6
50
150
-65 ~ 150
Units
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
I
EBO
h
FE
V
CE
(sat)
Parameter
Collector-Emitter Sustaining Voltage
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Test Condition
I
C
= 10mA, I
B
= 0
V
EB
= 7V, I
C
= 0
V
CE
= 5V, I
C
= 5A
V
CE
= 5V, I
C
= 8A
I
C
= 5A, I
B
= 1A
I
C
= 8A, I
B
= 1.6A
I
C
= 12A, I
B
= 3A
I
C
= 5A, I
B
= 1A
I
C
= 8A, I
B
= 1.6A
V
CB
= 10V , f = 0.1MHz
V
CE
= 10V, I
C
= 0.5A
V
CC
=125V, I
C
= 8A
I
B1
= - I
B2
= 1.6A
R
L
= 15,6Ω
4
1.1
3
0.7
180
8
6
Min.
400
Typ.
Max.
1
40
30
1
1.5
3
1.2
1.6
V
V
V
V
V
pF
MHz
µs
µs
µs
Units
V
mA
V
BE
(sat)
C
ob
f
T
t
ON
t
STG
t
F
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn ON Time
Storage Time
Fall Time
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSE13009F
Typical Characteristics
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
100
10
V
CE
= 5V
I
C
= 3 I
B
h
FE
, DC CURRENT GAIN
1
V
BE
(sat)
10
0.1
V
CE
(sat)
1
0.1
1
10
100
0.01
0.1
1
10
100
Ic[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
10000
V
CC
=125V
I
C
=5I
B
C
ob
[pF], CAPACITANCE
t
R
, t
D
[
µ
s], TURN ON TIME
100
1000
t
R
10
100
t
D
, V
BE
(off)=5V
1
0.1
1
10
100
1000
10
0.1
1
10
100
V
CB
[V], COLLECTOR-BASE VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 3. Collector Output Capacitance
Figure 4. Turn On Time
10000
100
t
STG
, t
F
[
µ
s], TURN OFF TIME
V
CC
=125V
I
C
=5I
B
I
C
[A], COLLECTOR CURRENT
10
10
0
µ
s
1m
DC
t
STG
s
1000
1
0.1
t
F
100
0.1
0.01
1
10
100
1
10
100
1000
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Turn Off Time
Figure 6. Safe Operating Area
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSE13009F
Typical Characteristics
(Continued)
70
60
P
C
[W], POWER DISSIPATION
50
40
30
20
10
0
0
25
50
o
75
100
125
150
175
Tc[ C], CASE TEMPERATURE
Figure 1. DC current Gain
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSE13009F
Package Demensions
TO-220F
3.30
±0.10
10.16
±0.20
(7.00)
ø3.18
±0.10
2.54
±0.20
(0.70)
6.68
±0.20
15.80
±0.20
(1.00x45°)
MAX1.47
9.75
±0.30
0.80
±0.10
(3
0
°
)
0.35
±0.10
2.54TYP
[2.54
±0.20
]
#1
0.50
–0.05
2.54TYP
[2.54
±0.20
]
4.70
±0.20
+0.10
2.76
±0.20
9.40
±0.20
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
15.87
±0.20
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
E
2
CMOS™
FACT™
FACT Quiet Series™
FAST
®
FASTr™
GTO™
DISCLAIMER
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2000 Fairchild Semiconductor International
Rev. E
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